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MIL-PRF-19500-503 Semiconductor Device, Diode, Silicon, Power Rectifier, Ultra Fast Recovery, Types 1N6073 Through 1N6081, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for three separate series of silicon, ultra fast recovery semiconductor diodes for use as power rectifiers. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. One level of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/503H
TABLE I. Group A inspection ­ Continued.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 4 ­ Continued
VR = 12 V; f > 100 KHZ
CJ
Capacitance
4001
VSIG < 200 mV (pk)
1N6073 thru 1N6075
24
pF
1N6076 thru 1N6078
58
pF
1N6079 thru 1N6081
230
pF
Scope display evaluation
4023
See 4.5.3, n = 116, c = o.
Subgroup 5
Not applicable
Subgroup 6
Forward surge
4066
Condition A, IFSM = rated (see
*
1.3); 10 surges of 8.3 ms each at
1 minute intervals superimposed
on IO = IO1 rated (see 1.3); VRWM =
rated (see 1.3); TA = + 25°C.
Electrical measurements
See table III, steps 1, 2, 3, and 5.
Subgroup 7
Not applicable
1/ For sampling plan, see MIL-PRF-19500.
2/ Not applicable to JANHC devices.
10



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