MIL-PRF-19500-503 Semiconductor Device, Diode, Silicon, Power Rectifier, Ultra Fast Recovery, Types 1N6073 Through 1N6081, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for three separate series of silicon, ultra fast recovery semiconductor diodes for use as power rectifiers. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. One level of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/503H

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3 or 4 of this specification. This section

does not include documents cited in other sections of this specification or recommended for additional information or

as examples. While every effort has been made to ensure the completeness of this list, document users are

cautioned that they must meet all specified requirements of documents cited in sections 3 or 4 of this specification,

whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

Semiconductor Devices, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

Test Methods for Semiconductor Devices.

* (Copies of these documents are available online at https://quicksearch.dla.mil.)

2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the

text of this document and the references cited herein, the text of this document takes precedence. Nothing in this

document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions shall be as specified in

3.4 Interface and physical dimensions. The Interface and physical dimensions shall be as specified in

MIL-PRF-19500, and figures 1 (axial lead) and 2 (die) herein.

3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and as specified

herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.4.2 Diode construction. These devices shall be constructed in a manner using material which enable the diodes

to meet the applicable requirements of MIL-PRF-19500 and this document. The diode shall be metallurgically

bonded, non-cavity, double plug construction.

3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, the

following marking may be omitted from the body of the diode, but shall be retained on the initial container.

3.5.1 Polarity. The polarity of all types shall be indicated with a contrasting color band to denote the cathode end.