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MIL-PRF-19500-503 Semiconductor Device, Diode, Silicon, Power Rectifier, Ultra Fast Recovery, Types 1N6073 Through 1N6081, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for three separate series of silicon, ultra fast recovery semiconductor diodes for use as power rectifiers. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. One level of product assurance are provided for each unencapsulated device type.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15


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MIL-PRF-19500/503H
Symbol
Dimensions
1N6073 through 1N6075
1N6076 through 1N6078
1N6079 through 1N6081
(see note 3)
(see note 4)
(see note 4)
Inches
Millimeters
Inches
Millimeters
Inches
Millimeters
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
A
.039
.043
0.99
1.09
.066
.070
1.68
1.78
.128
.132
3.25
3.35
B
.031
.035
0.79
0.89
.057
.061
1.45
1.55
.119
.123
3.02
3.12
C
.008
.012
0.20
0.30
.008
.012
0.20
0.30
.008
.012
0.20
0.30
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Anode thickness: AL - 45,000 Å minimum; cathode thickness: AU - 2,500 Å minimum.
4. Anode thickness: AL - 60,000 Å minimum; cathode thickness: AU - 2,500 Å minimum.
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2. Physical dimensions, JANHC (A - version).
3



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