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MIL-PRF-19500-503 Semiconductor Device, Diode, Silicon, Power Rectifier, Ultra Fast Recovery, Types 1N6073 Through 1N6081, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for three separate series of silicon, ultra fast recovery semiconductor diodes for use as power rectifiers. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. One level of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/503H
TABLE II. Group E inspection (all quality levels) for qualification only.
Inspection
Sampling
plan
Method
Conditions
Subgroup 1
45 devices
c=0
-65°C to +175°C, 500 cycles.
Temperature cycling (air
1051
to air)
Hermetic seal
1071
Electrical measurement
See table III, steps 1, 2, 3, 4, and 5.
Subgroup 2
22 devices
c=0
t = 1,000 hours; TA = +150°C; VR dc = 80 - 85 percent
Blocking life
1048
rated VRWM (see 1.3)
Electrical measurement
See table III, steps 1, 2, 3, 4, and 5.
Subgroup 4
N/A
Thermal impedance
curves
Subgroup 5
Not applicable
Subgroup 10
Peak reverse power, (PRM)= shall be characterized by the
Peak reverse power
4065
supplier and this data shall be available to the Government.
Test shall be performed on each sublot.
Electrical measurement
During the PRM test, the voltage (VBR) shall be monitored to
verify it has not collapsed. Any collapse in VBR during or
after the PRM test or rise in leakage current (IR) after the
test that exceeds IR1 in table I shall be considered a failure
to that level of applied PRM. Progressively higher levels of
PRM shall be applied until failure occurs on all devices
within the chosen sample size to characterize each sublot.
Subgroup 11
22 devices
c=0
Forward surge
4066
Condition A, IFSM = rated (see 1.3); ten surges of 8.3 ms
each at 1 minute intervals superimposed on IO = IO1 rated
(see 1.3); VRWM = rated (see 1.3); TA = + 25°C.
Electrical measurement
See table III, steps 1, 2, 3, 4, and 5.
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