MIL-PRF-19500-503 Semiconductor Device, Diode, Silicon, Power Rectifier, Ultra Fast Recovery, Types 1N6073 Through 1N6081, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for three separate series of silicon, ultra fast recovery semiconductor diodes for use as power rectifiers. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. One level of product assurance are provided for each unencapsulated device type.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/503H

Maximum lead temperature in �C (TL at point L from body (see table below).

For maximum operating junction temperature with equal two-lead conditions.

RθJL

�C/W

Distance from body

.000 (0.00 mm)

5.0

.125 (3.18 mm)

11.5

.250 (6.35 mm)

17.5

.375 (9.52 mm)

23.5

.500 (12.7 mm)

29.0

.750 (19.1 mm)

40.0

FIGURE 5. Power derating curves maximum power in watts versus lead temperature for 1N6079, 1N6080, and

1N6081.