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MIL-PRF-19500-503 Semiconductor Device, Diode, Silicon, Power Rectifier, Ultra Fast Recovery, Types 1N6073 Through 1N6081, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for three separate series of silicon, ultra fast recovery semiconductor diodes for use as power rectifiers. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. One level of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/503H
TABLE III. Groups A, B, C and E delta and electrical measurements. 1/ 2/ 3/
Limits
Step
Inspection
Symbol
Unit
Method
Conditions
Min
Max
Pulse width ≤ 8.3 ms and duty
VF
1.
Forward voltage
4011
cycle ≤ 2 percent.
IFM = 9.4 A dc
1N6073 thru 1N6075
2.04
V dc
IFM = 18.8 A dc
1N6076 thru 1N6078
1.76
V dc
IFM = 37.7 A dc
1N6079 thru 1N6081
1.50
V dc
DC method, VR = rated VR
IR1
2.
Reverse current
4016
(see 1.3).
µA dc
1N6073 thru 1N6075
1.0
µA dc
1N6076 thru 1N6078
5.0
µA dc
1N6079 thru 1N6081
10.0
ĆIR
DC method, VR = rated VR
3.
Reverse current
4016
4/
(see 1.3).
µA dc
1N6073 thru 1N6075
.250
µA dc
1N6076 thru 1N6078
1.0
µA dc
1N6079 thru 1N6081
5.0
IR = 100 µA dc
V(BR)R
4.
Breakdown voltage
4021
1N6073, 1N6076, 1N6079
60
V dc
1N6074, 1N6077, 1N6080
110
V dc
1N6075, 1N6078, 1N6081
160
V dc
Pulse width ≤ 8.3 ms and duty
ĆVF
5.
Forward voltage
4011
V dc
cycle ≤ 2 percent.
IFM = 9.4 A dc
1N6073 thru 1N6075
+0.1 V dc maximum
change from the
IFM = 18.8 A dc
1N6076 thru 1N6078
previous measured
IFM = 37.7 A dc
1N6079 thru 1N6081
value.
6.
Thermal impedance
3101
See 4.3.1
ZθJX
5/ 7.
Reverse recovery time
4031
See table I, subgroup 4
30
ns
trr
herein.
1/
The electrical measurements for table VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 are as follows:
a. Subgroup 2, see table III herein, steps 1, 2, and 7.
b. Subgroup 3, see table III herein, steps 1, 2, 3, 5, 6, and 7.
c. Subgroup 6, see table III herein, steps 1, 2, 3, 5, and 6.
The electrical measurements for table VII of MIL-PRF-19500 are as follows:
2/
a. Subgroup 2, see table III herein, steps 1, 2, and 6.
b. Subgroup 3, see table III herein, steps 1 and 2.
c. Subgroup 6, see table III herein, steps 1, 2, 3, 5, 6, and 7.
The electrical measurements for table IX of MIL-PRF-19500 are as follows:
3/
a. Subgroup 1, see table III herein, steps 1, 2, 3, 4, 5, 6, and 7.
b. Subgroup 2, see table III herein, steps 1, 2, 3, 4, and 5.
4/
Rated IR1 or 100 percent, whichever is greater.
5/
Step 7 applies to irradiated devices only.
12



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