MIL-PRF-19500/503H
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and as specified herein. Electrical
measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table III
herein.
4.5 Methods of inspection. Methods of inspection shall be specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Inspection conditions. Unless otherwise specified, all inspections shall be conducted at an ambient
temperature TA of +25°C ±3°C.
4.5.3 Scope display evaluation. The reverse breakdown characteristics shall be viewed on an oscilloscope with
display calibration factors of 20 µA/division and 10 to 50 V/division. Reverse current over the knee shall be at least
100 µA. Each device may exhibit a sharp knee characteristic and any discontinuity or dynamic instability of the trace
shall be cause for rejection.
4.5.4 Reverse-recovery time. The reverse recovery time shall be measured in the circuit on figure 6 or an
equivalent circuit. The recovery conditions shall be 0.5 A forward current to 1.0 A reverse current. The reverse
recovery time is defined as the time the rectifier begins to conduct in the reverse direction (crosses I = zero) until the
reverse current decays to - 0.25 A. The point of contact on the leads shall be no less than .375 inch (9.52 mm) from
the diode body.
4.5.5 Steady-state operation life. This test shall be conducted with a half-sine waveform of the specified peak
voltage impressed across the diode in the reverse direction, followed by a half-sine waveform of the specified
average rectified current. The forward conduction angle of the rectified current shall be no greater than 180 degrees
nor less than 150 degrees. Mounting conditions (see figure 7).
4.5.5.1 Alternate mounting conditions. At the option of the manufacturer, other clip or heat-sink mounting
configurations may be used provided the IO is adjusted such that each device junction temperature +125°C ≤ TJ ≤
+155°C at an ambient temperature +25°C ≤ TA ≤ +55°C.
4.5.6 Burn-in and life tests. These tests shall be conducted with a half-sine waveform of the specified peak voltage
impressed across the diode in the reverse direction followed by a half-sine waveform of the specified average
rectified current. The forward conduction angle of the rectified current shall be neither greater than 180 degrees, nor
less than 150 degrees.
4.5.6.1 Free air burn-in. The use of a current limiting or ballast resistor is permitted provided that each DUT still
sees the full Pt (minimum) and that the minimum applied voltage, where applicable, is maintained throughout the
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