MIL-PRF-19500-503 Semiconductor Device, Diode, Silicon, Power Rectifier, Ultra Fast Recovery, Types 1N6073 Through 1N6081, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for three separate series of silicon, ultra fast recovery semiconductor diodes for use as power rectifiers. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. One level of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/503H

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3 and table I herein.

3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4 and table I).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.

4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case

qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II

tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first

inspection lot of this revision to maintain qualification.

4.2.2 JANHC devices. Qualification for JANHC devices shall be in accordance with MIL-PRF-19500.