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MIL-PRF-19500-503 Semiconductor Device, Diode, Silicon, Power Rectifier, Ultra Fast Recovery, Types 1N6073 Through 1N6081, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for three separate series of silicon, ultra fast recovery semiconductor diodes for use as power rectifiers. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. One level of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/503H
TABLE I. Group A inspection.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
°C/W
Thermal impedance 2/
3101
See 4.3.1
ZθJX
Pulse width ≤ 8.3 ms and duty cycle
VF1
Forward voltage
4011
≤ 2 percent.
IFM = 9.4 A dc
1N6073 thru 1N6075
2.04
V dc
IFM = 18.8 A dc
1N6076 thru 1N6078
1.76
V dc
IFM = 37.7 A dc
1N6079 thru 1N6081
1.50
V dc
DC method; VR = rated VR (see 1.3)
IR1
Reverse current leakage
4016
µA dc
1N6073 thru 1N6075
1.0
µA dc
1N6076 thru 1N6078
5.0
µA dc
1N6079 thru 1N6081
10.0
IR = 100 µA dc
V(BR)R
Breakdown voltage
4021
1N6073, 1N6076, 1N6079
60
V dc
1N6074, 1N6077, 1N6080
110
V dc
1N6075, 1N6078, 1N6081
160
V dc
Subgroup 3
TA = +100°C
High temperature operation:
DC method; VR = rated VR (see 1.3)
IR2
Reverse current leakage
4016
µA dc
1N6073 thru 1N6075
50
µA dc
1N6076 thru 1N6078
100
µA dc
1N6079 thru 1N6081
500
Subgroup 4
trr
Reverse recovery time
30
ns
See footnotes at end of table.
9



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