MIL-PRF-19500-503 Semiconductor Device, Diode, Silicon, Power Rectifier, Ultra Fast Recovery, Types 1N6073 Through 1N6081, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for three separate series of silicon, ultra fast recovery semiconductor diodes for use as power rectifiers. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. One level of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/503H

NOTES:

1. Rise time ≤ 350 ps, input impedance 50 ohms, circuit impedance 50 ohms coaxial.

2. Rise time ≤ 250 ps, source impedance = 8 ohms maximum, PRF ≈฀ 0 .5 kHz , P W ≥ 40 ns.

3. Recovery conditions: 0.5 A forward current to 1.0 A reverse current. Recovery time measured

when rectifier recovers to 0.25 A.

4. Constructed from 10 through 10 ohm resistors 1/8 watt.

5. Constructed from 10 through 100 ohm resistors 1/8 watt.

FIGURE 6. Reverse recovery time test circuit and characteristic waveform.