The documentation and process conversion
INCH-POUND
measures necessary to comply with this document
shall be completed by 20 January 2014.
MIL-PRF-19500/595K
20 November 2013
SUPERSEDING
MIL-PRF-19500/595J
25 October 2010
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,
TRANSISTOR, P-CHANNEL, SILICON,
TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode,
MOSFET, power transistor intended for use in high density power switching applications. Four levels of product
assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product
assurance for each unencapsulated device type die, with avalanche energy ratings (EAS and EAR) and maximum
avalanche current (IAR).
1.2 Physical dimensions. See figure 1 (TO-254AA), figure 2 (TO-267AB) for surface mount devices, and figure 3
and 4 for JANHC and JANKC (die) dimensions.
1.3 Maximum ratings (TC = +25C, unless otherwise specified).
Min
V(BR)DSS
Type
PT (1)
PT
VGS
ID1 (3) (4) ID2 (3) (4)
IS
IDM
TJ
RJC
TC =
TC =
TA =
(2)
VGS = 0
TC =
(5)
and
+25C
+25C
+25C
+100C
ID = -1.0
TSTG
mA dc
C/W
C
W
W
V dc
V dc
A dc
A dc
A dc A (pk)
20
2N7236, 2N7236U
125
4.0
1.0
-100
-18
-11
-18
-72
-55 to +150
20
2N7237, 2N7237U
125
4.0
1.0
-200
-11
-7
-11
-44
-55 to +150
See notes next page.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil/.
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