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MIL-PRF-19500-595 Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, P-Channel, Silicon, Types 2N7236, 2N7237, 2N7236U, And 2N7237U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\).

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MIL-PRF-19500/595K
4.3 Screening (JANTX, JANTXV, and JANS levels only). Screening shall be in accordance with table E-IV of
*
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table E-IV
Measurement
of MIL-PRF-19500)
(1) (2)
JANS level
JANTX and JANTXV level
(3)
Gate stress test (see 4.3.2)
Gate stress test (see 4.3.2)
(3)
Method 3470 of MIL-STD-750. (see 4.3.3)
Method 3470 of MIL-STD-750. (see 4.3.3)
(3) 3c
Method 3161 of MIL-STD-750 (see 4.3.4)
Method 3161 of MIL-STD-750 (see 4.3.4)
9
IGSSF1, IGSSR1, IDSS1, subgroup 2 of table I
Subgroup 2 of table I herein
herein
10
Method 1042 of MIL-STD-750, test
Method 1042 of MIL-STD-750, test
condition B
condition B
11
IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1
IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1
Subgroup 2 of table I herein.
Subgroup 2 of table I herein.
IGSSF1 = +20 nA dc or 100 percent of
initial value, whichever is greater.
IGSSR1 = -20 nA dc or 100 percent of
initial value, whichever is greater.
IDSS1 = 25 A dc or 100 percent of
initial value, whichever is greater.
12
Method 1042 of MIL-STD-750, test
Method 1042 of MIL-STD-750, test
condition A or TA = +175C and t = 48
condition A
hours
Subgroup 2 of table I herein.
13
Subgroup 2 and 3 of table I herein.
IGSSF1 = +20 nA dc or 100 percent of
IGSSF1 = +20 nA dc or 100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
IGSSR1 = -20 nA dc or 100 percent of
IGSSR1 = -20 nA dc or 100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
IDSS1 = 25 A dc or 100 percent of
IDSS1 = 25 A dc or 100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
rDS(on)1 = 20 percent of initial value.
rDS(on)1 = 20 percent of initial value.
VGS(th)1 = 20 percent of initial value.
VGS(th)1 = 20 percent of initial value.
17
For TO-254AA packages: Method 1081
For TO-254AA packages: Method 1081
*
of MIL-STD-750 (see 4.3.5), Endpoints:
of MIL-STD-750 (see 4.3.5), Endpoints:
Subgroup 2 of table I herein.
Subgroup 2 of table I herein.
(1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1 are measured.
(2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1 shall be invoked.
(3) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV do not need to be
repeated in screening requirements.
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