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MIL-PRF-19500-595 Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, P-Channel, Silicon, Types 2N7236, 2N7237, 2N7236U, And 2N7237U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\).

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MIL-PRF-19500/595K
Dimensions
Notes
Ltr
Inches
Millimeters
Min
Max
Min
Max
BL
.535
.545
13.59
13.84
CH
.249
.260
6.32
6.60
LD
.035
.045
0.89
1.14
LL
.510
.570
12.95
14.48
3
LO
.150 BSC
3.81 BSC
LS
.150 BSC
3.81 BSC
MHD
.139
.149
3.53
3.78
MHO
.665
.685
16.89
17.40
TL
.790
.800
20.07
20.32
4
TT
.040
.050
1.02
1.27
4
TW
.535
.545
13.59
13.84
Term
Drain
1
Source
Term
2
Term
Gate
3
NOTES:
1.  Dimensions are in inches.
2.  Millimeters are given for general information only.
3.  Protrusion thickness of ceramic eyelets included in dimension LL.
4.  All terminals are isolated from case.
5.  In accordance with ASME Y14.5M, diameters are equivalent to x symbology.
FIGURE 1. Physical dimensions for TO-254AA (2N7236 and 2N7237).
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