MIL-PRF-19500-595 Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, P-Channel, Silicon, Types 2N7236, 2N7237, 2N7236U, And 2N7237U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\).

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MIL-PRF-19500/595K

A version

Inches

.018

0.46

.025

0.64

.027

0.69

.042

1.07

.060

1.52

.063

1.60

.162

4.11

.170

4.32

.192

4.88

.219

5.56

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for information only.

3. Unless otherwise specified, tolerance is �.005 inch (0.13 mm).

4. Physical characteristics of the die thickness = .0187 inch (0.47 mm).

5. Back metal: Cr - Ni - Ag.

6. Top metal: Al.

7. Back contact: Drain.

8. See 6.5 for ordering information.

FIGURE 3. Physical dimensions JANHCA and JANKCA die.