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MIL-PRF-19500-595 Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, P-Channel, Silicon, Types 2N7236, 2N7237, 2N7236U, And 2N7237U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\).

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MIL-PRF-19500/595K
TABLE I. Group A inspection - Continued.
Inspection
MIL-STD-750
Limits
Symbol
Unit
1/
Method
Condition
Min
Max
Subgroup 3
TC = TJ = +125C
High temperature
operation:
200
IGSS2
nA dc
Gate reverse current
3411
Bias condition C
VGS = 20 V dc, VDS = 0 V dc,
IDSS2
Drain current
3413
Bias condition C, VGS = 0 V dc,
-1.0
mA dc
VDS = 100 percent of rated VDS
Drain current
3413
Bias condition C, VGS = 0 V dc,
-0.25
mA dc
IDSS3
VDS = 80 percent of rated VDS
VDS VGS, ID = -0.25 mA
Gate to source voltage
3403
-1.0
V dc
VGS(th)2
(threshold)
Static drain to source
3421
Condition A. VGS = -10 V dc,
rDS(on)3
on-state resistance
pulsed (see 4.5.1), ID = rated ID2
(see 1.3)
2N7236, 2N7236U
0.34
2N7237, 2N7237U
1.10
TC = TJ = -55C
Low temperature
operation:
VDS VGS, ID = -0.25 mA
Gate to source voltage
3403
-5.0
V dc
VGS(th)3
(threshold)
Subgroup 4
Switching time test
3472
ID = rated ID2 (see 1.3), VGS = -10
V dc, gate drive impedance = 9.1
, VDD = 50 percent of VBR(DSS)
Turn-on delay time
td(on)
35
ns
Rise time
tr
85
ns
Turn-off delay time
td(off)
85
ns
Fall time
tf
65
ns
See footnotes at end of table.
13



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