MIL-PRF-19500-595 Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, P-Channel, Silicon, Types 2N7236, 2N7237, 2N7236U, And 2N7237U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\).

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MIL-PRF-19500/595K

4.3.1 Screening (JANHC and JANKC). Screening of die shall be in accordance with appendix G of

MIL-PRF-19500. As a minimum, die shall be 100 percent probed in accordance with table I, subgroup 2, except test

current shall not exceed 20 A.

4.3.2 Gate stress test. Apply VGS = 30 V minimum for t = 250 s minimum.

4.3.3 Single pulse avalanche energy (EAS).

a. Peak current (ID) ............................................. IAR(max).

b. Peak gate voltage (VGS).................................. -10 V.

c. Gate to source resistor (RGS) .......................... 25  RGS  200 .

d. Initial case temperature .................................. +25C +10C, -5C.

e. Inductance ......................................................  2 E AS  VBR  VDD  mH minimum.

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I D1   

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VBR

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f. Number of pulses to be applied ....................... 1 pulse minimum.

g. Supply voltage (VDD) ....................................... 25 V for 2N7236, 2N7236U, -50 V for 2N7237, 2N7237U.

4.3.4 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method

3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where appropriate).

Measurement delay time (tMD) = 60 s max. See table II, group E, subgroup 4 herein.

4.3.5 Dielectric withstanding voltage.

a. Magnititude of test voltage...................................900 V dc.

b. Duration of application of test voltage....................15 seconds (min).

c. Points of application of test voltage........................All leads to case (bunch connection).

d. Method of connection.........................................Mechanical.

e. Kilovolt-ampere rating of high voltage source..........1,200 V/1.0 mA (min).

f. Maximum leakage current....................................1.0 mA.

g. Voltage ramp up time...................................................500 V/second.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I

herein. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein.