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MIL-PRF-19500-595 Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, P-Channel, Silicon, Types 2N7236, 2N7237, 2N7236U, And 2N7237U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\).

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MIL-PRF-19500/595K
Dimensions
Letter
Inches
Millimeters
Min
Max
Min
Max
BL
.620
.630
15.75
16.00
BW
.445
.455
11.30
11.56
CH
.142
3.60
LH
.010
.020
0.26
0.50
.410
.420
10.41
10.67
LL1
.152
.162
3.86
4.11
LL2
.210 BSC
5.33 BSC
LS1
.105 BSC
2.67 BSC
LS2
.370
.380
9.40
9.65
LW1
.135
.145
3.43
3.68
LW2
.030
0.76
Q1
.035
0.89
Q2
Term 1
Drain
Term 2
Gate
Term 3
Source
NOTES:
1.
Dimensions are in inches.
2.
Millimeters are given for information only.
3.
The lid shall be electrically isolated from the drain, gate and source.
In accordance with ASME Y14.5M, diameters are equivalent to x symbology.
4.
FIGURE 2. Dimensions and configuration of surface mount package outline (TO-267AB), 2N7236U and 2N7237U).
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