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MIL-PRF-19500-595 Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, P-Channel, Silicon, Types 2N7236, 2N7237, 2N7236U, And 2N7237U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\).

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MIL-PRF-19500/595K
TABLE I. Group A inspection.
Inspection
MIL-STD-750
Limits
Symbol
Unit
1/
Method
Condition
Min
Max
Subgroup 1
Visual and mechanical
2071
inspection
Subgroup 2
C/W
3161
See 4.3.4
Thermal impedance 2/
Z JC
Breakdown voltage,
3407
Bias condition C, VGS = 0V, ID = 1
V (BR)DSS
drain to source
mA dc
2N7236, 2N7236U
-100
V dc
2N7237, 2N7237U
-200
V dc
VDS VGS, ID = -.25 mA
Gate to source voltage
3403
-2.0
-4.0
V dc
VGS(th)1
(threshold)
IGSSF1
Gate reverse current
3411
Bias condition C, VGS = +20 V dc,
+100
nA dc
VDS = 0 V dc
Gate reverse current
3411
Bias condition C, VGS = -20 V dc,
IGSSR1
-100
nA dc
VDS = 0 V dc
A dc
Drain current
3413
Bias condition C, VGS = 0 V dc,
IDSS1
-25
VDS = 80 percent of rated VDS
Static drain to source
3421
VGS = 10 V dc, condition A, pulsed
rDS(on)1
on-state resistance
(see 4.5.1), ID = rated ID2 (see 1.3)
2N7236, 2N7236U
0.20
2N7237, 2N7237U
0.51
rDS(on)2
Static drain to source
3421
VGS = -10 V dc, condition A,
pulsed (see 4.5.1), ID = rated ID1
on-state resistance
(see 1.3)
2N7236, 2N7236U
0.22
2N7237, 2N7237U
0.52
Forward voltage
4011
VGS = 0 V dc
VSD
(source drain diode)
ID = rated ID1, pulsed (see 4.5.1)
2N7236, 2N7236U
-5.0
V
2N7237, 2N7237U
-5.0
V
See footnotes at end of table.
12



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