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MIL-PRF-19500-595 Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, P-Channel, Silicon, Types 2N7236, 2N7237, 2N7236U, And 2N7237U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\).

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MIL-PRF-19500/595K
2N7236
Dimensions - 2N7236
Ltr
Inches
Millimeters
Min
Max
Min
Max
A
.177
.183
4.50
4.65
B
.177
.183
4.50
4.65
C
.030
.034
.76
.86
D
.017
.022
.43
.56
E
.034
.038
.86
.97
F
.047
.051
1.19
1.30
NOTES:
1.
Dimensions are in inches.
2.
Millimeters are given for general information only.
Unless otherwise specified, tolerance is .005 inch (0.13 mm).
3.
4.
The physical characteristics of the die are: The back metals are chromium, nickel,
and silver and the back contact is the drain. The top metal is aluminum.
Die thickness is .015 inch (0.38 mm) .001 inch (0.025 mm).
5.
FIGURE 4 . JANHCB and JANKCB (B-version) die dimensions for 2N7236 only.
6



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