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MIL-PRF-19500-595 Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, P-Channel, Silicon, Types 2N7236, 2N7237, 2N7236U, And 2N7237U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\).

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MIL-PRF-19500/595K
1.3 Maximum ratings - continued.
Type
IAR
EAS
EAR
rDS(on) max (6)
VGS = -10 V dc
ID = ID2
TJ = +25C
TJ = +150C
A
mJ
mJ
ohm
ohm
2N7236, 2N7236U
-18
500
12.5
0.20
0.400
2N7237, 2N7237U
-11
500
12.5
0.51
1.122
Derate linearly 1.0 W/C for TC > +25C.
(1)
(2)
See figure 5, thermal impedance curves.
(3)
The following formula derives the maximum theoretical ID limit. ID is limited by package and internal wires
and may be limited by pin diameter:
TJM - TC
ID =
RJC
 x RDS ( on ) at TJM
(4)
See figure 6, maximum drain current graphs.
(5)
IDM = 4 X ID1 as calculated in footnote (3).
(6)
Pulsed (see 4.5.1).
1.4 Primary electrical characteristics. TC = +25C (unless otherwise specified).
Max rDS(on)1 (1)
Max IDSS1
VGS = 0
Type
Min V(BR)DSS
VGS(th)1
VDS VGS
VGS = 0
VDS = 80 percent
ID = ID2
ID = -1.0 mA dc
of rated VDS
VGS = 10 V
ID = -0.25 mA dc
A dc
V dc
V dc
Ohms
Min
Max
2N7236, 2N7236U
-100
-2.0
-4.0
-25
0.20
2N7237, 2N7237U
-200
-2.0
-4.0
-25
0.51
(1)
Pulsed (see 4.5.1).
2



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