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MIL-PRF-19500-596 Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, N-Channel, Silicon, Types 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, And 2N7222U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a N-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum ratings \(EAR and EAS\) and maximum avalanche current IAR. Two levels of product assurance are provided for die \(element evaluation\).

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MIL-PRF-19500/596K
TABLE I. Group A inspection.
Inspection
MIL-STD-750
Limits
Symbol
Unit
1/
Method
Condition
Min
Max
Subgroup 1
Visual and mechanical
2071
inspection
Subgroup 2
°C/W
Thermal impedance 2/
3161
See 4.3.4
Z θJC
Breakdown voltage,
3407
Bias condition C, VGS = 0 V, ID =
V (BR)DSS
drain to source
1 mA dc
2N7218, 2N7218U
100
V dc
2N7219, 2N7219U
200
V dc
2N7221, 2N7221U
400
V dc
2N7222, 2N7222U
500
V dc
VDS ≥ VGS, ID = .25 mA
Gate to source voltage
3403
VGS(th)1
2.0
4.0
V dc
(threshold)
Gate current
3411
Bias condition C, VGS = 20 V dc,
IGSSF1
100
nA dc
VDS = 0
Gate current
3411
Bias condition C, VGS = -20 V dc,
IGSSR1
-100
nA dc
VDS = 0
µA dc
Drain current
3413
Bias condition C, VGS = 0, VDS =
IDSS1
25
80 percent of rated VDS
Static drain to source
3421
VGS = 10 V dc, condition A, pulsed
rDS(on)1
on-state resistance
(see 4.5.1), ID = rated ID2 (see 1.3)
Ω
2N7218, 2N7218U
0.077
Ω
2N7219, 2N7219U
0.18
Ω
2N7221, 2N7221U
0.55
Ω
2N7222, 2N7222U
0.85
Static drain to source
3421
VGS = 10 V dc, condition A, pulsed
rDS(on)2
on-state resistance
(see 4.5.1), ID = rated ID1 (see 1.3)
Ω
2N7218, 2N7218U
0.125
Ω
2N7219, 2N7219U
0.25
Ω
2N7221, 2N7221U
0.70
Ω
2N7222, 2N7222U
0.95
See footnotes at end of table.
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