An Integrated Publishing, Inc. Site

An Integrated Publishing Website

MIL-PRF-19500-596 Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, N-Channel, Silicon, Types 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, And 2N7222U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a N-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum ratings \(EAR and EAS\) and maximum avalanche current IAR. Two levels of product assurance are provided for die \(element evaluation\).

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14

MIL-PRF-19500/596K

Dimensions

Symbol

Inches

Millimeters

Min

Max

Min

Max

.620

.630

15.75

16.00

.445

.455

11.30

11.56

.142

3.60

.010

.020

0.26

0.50

LL1

.410

.420

10.41

10.67

LL2

.152

.162

3.86

4.11

LS1

.210 BSC

5.33 BSC

LS2

.105 BSC

2.67 BSC

LW1

.370

.380

9.40

9.65

LW2

.135

.145

3.43

3.68

.030

0.76

.035

0.89

Term 1

Drain

Term 2

Gate

Term 3

Source

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for information only.

3. The lid shall be electrically isolated from the drain, gate and source.

4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 2.

Dimensions and configuration of surface mount package outline (TO-267AB), 2N7218U, 2N7219U,

2N7221U, and 2N7222U.