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MIL-PRF-19500-596 Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, N-Channel, Silicon, Types 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, And 2N7222U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a N-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum ratings \(EAR and EAS\) and maximum avalanche current IAR. Two levels of product assurance are provided for die \(element evaluation\).

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MIL-PRF-19500/596K
TABLE I. Group A inspection - Continued.
Inspection
MIL-STD-750
Limits
Symbol
Unit
1/
Method
Condition
Min
Max
Subgroup 4
Switching time test
3472
ID = rated ID2 (see 1.3), VGS = 10 V
dc, gate drive impedance = 9.1 Ω,
VDD = 50 percent of VBR(DSS)
Turn-on delay time
td(on)
2N7218, 2N7218U
21
ns
2N7219, 2N7219U
20
ns
2N7221, 2N7221U
25
ns
2N7222, 2N7222U
21
ns
Rise time
tr
2N7218, 2N7218U
105
ns
2N7219, 2N7219U
105
ns
2N7221, 2N7221U
92
ns
2N7222, 2N7222U
73
ns
Turn-off delay time
td(off)
2N7218, 2N7218U
64
ns
2N7219, 2N7219U
58
ns
2N7221, 2N7221U
79
ns
2N7222, 2N7222U
72
ns
Fall time
tf
2N7218, 2N7218U
65
ns
2N7219, 2N7219U
67
ns
2N7221, 2N7221U
58
ns
2N7222, 2N7222U
51
ns
Subgroup 5
Safe operating area test
3474
See figure 6; tp = 10 ms, VDS = 80
(high voltage)
percent of rated VBR(DSS), VDS =
200 V maximum
Electrical
See table I, subgroup 2
measurements
Subgroup 6
Not applicable
See footnotes at end of table.
13



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