MIL-PRF-19500-596 Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, N-Channel, Silicon, Types 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, And 2N7222U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a N-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum ratings \(EAR and EAS\) and maximum avalanche current IAR. Two levels of product assurance are provided for die \(element evaluation\).

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MIL-PRF-19500/596K

4.3.1 Screening (JANHC and JANKC). Screening of die shall be in accordance with MIL-PRF-19500. As a

minimum die, shall be 100 percent probed in accordance with table I, subgroup 2 except test current shall not exceed

20 amperes.

4.3.2 Gate stress test. Apply VGS = 30 V minimum for t = 250 �s minimum.

4.3.3 Single pulse avalanche energy (EAS).

a. Peak current (IAS)............................................ ID1.

b. Peak gate voltage (VGS).................................. 10 V.

c. Gate to source resistor (RGS) .......................... 25 ≤ RGS ≤ 200 Ω.

d. Initial case temperature .................................. +25�C +10�C, -5�C.

e. Inductance: .....................................................  2E AS  VBR - VDD  mH minimum.







(I D1 )  



VBR





f. Number of pulses to be applied ....................... 1 pulse minimum.

g. Supply voltage (VDD)....................................... 50 V, 25 V for 100 V devices.

4.3.4 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method

3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where appropriate).

Measurement delay time (tMD) = 30 - 60 �s max. See table II, group E, subgroup 4 herein.

4.3.5 Dielectric withstanding voltage.

a. Magnitude of test voltage.......................................900V DC

b. Duration of application of test voltage.......................15 seconds (min)

c. Points of application of test voltage...........................All leads to case (bunch connection)

d. Method of connection.............................................Mechanical

e. Kilovolt-ampere rating of high voltage source..............1200V/1.0 mA (min)

f. Maximum leakage current........................................1.0 mA

g. Voltage ramp up time..............................................500V/second

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as

specified herein.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I

herein. Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2

herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and herein.

Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2 herein.