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MIL-PRF-19500-596 Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, N-Channel, Silicon, Types 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, And 2N7222U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a N-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum ratings \(EAR and EAS\) and maximum avalanche current IAR. Two levels of product assurance are provided for die \(element evaluation\).

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MIL-PRF-19500/596K
1.3 Maximum ratings - continued.
rDS(on) max (6)
Type
IAR
EAS
EAR
V(ISO)
VGS
VGS = 10 V dc
ID = ID2
at 70,000
TJ = +25°C
TJ = +150°C
feet
Ω
Ω
A
mj
mj
V dc
±20
2N7218, 2N7218U
28
250
12.5
0.077
0.154
±20
2N7219, 2N7219U
18
450
12.5
0.18
0.387
±20
2N7221, 2N7221U
10
650
12.5
400
0.55
1.32
±20
2N7222, 2N7222U
8
700
12.5
500
0.85
2.04
Derate linearly 1.0 W/°C for TC > +25°C.
(1)
(2)
See figure 4, thermal impedance curves.
(3)
The following formula derives the maximum theoretical ID limit. ID is limited by package and internal wires
and may be limited by pin diameter:
T  J max- T  C
ID=
( RΘJC )x( RDS (ON ) at T  Jmax )
(4)
See figure 5, maximum drain current graph.
IDM = 4 x ID1 as calculated in note 3.
(5)
(6)
Pulsed (see 4.5.1).
1.4 Primary electrical characteristics. TC = +25°C (unless otherwise specified).
Max IDSS1
Max rDS(on)1
Type
Min V(BR)DSS
VGS(th)1
VGS = 0
(1)
VDS ≥ VGS
VGS = 0
VDS = 80 percent
ID = ID2
ID = 1.0 mA dc
of rated VDS
VGS = 10 V
ID = 0.25 mA dc
µA dc
V dc
V dc
Ohms
Min
Max
2N7218, 2N7218U
100
2.0
4.0
25
0.077
2N7219, 2N7219U
200
2.0
4.0
25
0.18
2N7221, 2N7221U
400
2.0
4.0
25
0.55
2N7222, 2N7222U
500
2.0
4.0
25
0.85
(1) Pulsed (see 4.5.1).
2



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