MIL-PRF-19500-596 Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, N-Channel, Silicon, Types 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, And 2N7222U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a N-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum ratings \(EAR and EAS\) and maximum avalanche current IAR. Two levels of product assurance are provided for die \(element evaluation\).

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14

MIL-PRF-19500/596K

Inches

.018

0.46

.037

0.94

.162

4.11

.020

0.51

.042

1.07

.170

4.32

.025

0.64

.049

1.24

.192

4.88

.027

0.69

.060

1.52

.219

5.56

.029

0.74

.063

1.60

.227

5.77

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Unless otherwise specified, tolerance is �.005 inch (0.13 mm).

4. The physical characteristics of the die thickness are .0187 inch (0.475 mm). The back metals

are chromium, nickel, and silver. The top metal is aluminum and the back contact is the drain.

5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

6. See 6.4 for ordering information.

FIGURE 3. JANHC and JANKC (A-version) die dimensions.