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MIL-PRF-19500-596 Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, N-Channel, Silicon, Types 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, And 2N7222U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a N-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum ratings \(EAR and EAS\) and maximum avalanche current IAR. Two levels of product assurance are provided for die \(element evaluation\).

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MIL-PRF-19500/596K
TABLE I. Group A inspection - Continued.
Inspection
MIL-STD-750
Limits
Symbol
Unit
1/
Method
Condition
Min
Max
Subgroup 2 - Continued
Forward voltage (source
4011
VGS = 0, ID = rated ID1, pulsed (see
VSD
1.5
V
drain diode)
4.5.1)
Subgroup 3
TC = TJ = +125°C
High temperature
operation:
Gate current
3411
Bias condition C,
IGSSF2
200
nA dc
VGS = 20 V dc, VDS = 0
Gate current
3411
Bias condition C,
IGSSR2
-200
nA dc
VGS = -20 V dc, VDS = 0
Drain current
3413
Bias condition C, VGS = 0, VDS =
IDSS2
1.0
mA dc
100 percent of rated VDS
Drain current
3413
Bias condition C, VGS = 0, VDS =
IDSS3
0.25
mA dc
80 percent of rated VDS
VDS ≥ VGS, ID = 0.25 mA
Gate to source voltage
3403
VGS(th)2
1.0
V dc
(threshold)
Static drain to source
3421
VGS = 10 V dc, pulsed (see 4.5.1),
rDS(on)3
on-state resistance
ID = rated ID2 (see 1.3)
Ω
2N7218, 2N7218U
0.24
Ω
2N7219, 2N7219U
0.48
Ω
2N7221, 2N7221U
1.44
Ω
2N7222, 2N7222U
2.04
TC = TJ = -55°C
Low temperature
operation:
VDS ≥ VGS, ID = 0.25 mA
Gate to source voltage
3403
VGS(th)3
5.0
V dc
(threshold)
See footnotes at end of table.
12



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