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MIL-PRF-19500-596 Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, N-Channel, Silicon, Types 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, And 2N7222U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a N-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum ratings \(EAR and EAS\) and maximum avalanche current IAR. Two levels of product assurance are provided for die \(element evaluation\).

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MIL-PRF-19500/596K

Dimensions

Notes

Ltr

Inches

Millimeters

Min

Max

Min

Max

.535

.545

13.59

13.84

.249

.260

6.32

6.60

.035

.045

0.89

1.14

.510

.570

12.95

14.48

.150 BSC

3.81 BSC

.150 BSC

3.81 BSC

MHD

.139

.149

3.53

3.78

MHO

.665

.685

16.89

17.40

.790

.800

20.07

20.32

3, 4

.040

.050

1.02

1.27

.535

.545

13.59

13.84

3, 4

Term

Drain

Term

Source

Term

Gate

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Protrusion thickness of ceramic eyelets included in dimension LL.

4. All terminals are isolated from case.

5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 1. Physical dimensions for TO-254AA (2N7218, 2N7219, 2N7221, and 2N7222).