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MIL-PRF-19500-596 Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, N-Channel, Silicon, Types 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, And 2N7222U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a N-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum ratings \(EAR and EAS\) and maximum avalanche current IAR. Two levels of product assurance are provided for die \(element evaluation\).

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MIL-PRF-19500/596K
4.3 Screening (JANS, JANTX, and JANTXV levels). Screening shall be in accordance with table E-IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Measurement
Screen (see
table E-IV of
MIL-PRF-19500)
JANS level
JANTX and JANTXV level
(1) (2)
(3)
Gate stress test (see 4.3.2)
Gate stress test (see 4.3.2)
(3)
Method 3470 of MIL-STD-750. (see 4.3.3)
Method 3470 of MIL-STD-750. (see 4.3.3)
(3) 3c
Method 3161 of MIL-STD-750 (see 4.3.4)
Method 3161 of MIL-STD-750 (see 4.3.4)
9
IGSSF1, IGSSR1, IDSS1, subgroup 2 of table I
Subgroup 2 of table I herein
herein;
10
Method 1042 of MIL-STD-750, test condition
Method 1042 of MIL-STD-750, test condition
B
B
11
IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1
IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1
Subgroup 2 of table I herein.
Subgroup 2 of table I herein.
ĆIGSSF1 = +20 nA dc or ±100 percent of initial
value, whichever is greater.
ĆIGSSR1 = -20 nA dc or ±100 percent of initial
value, whichever is greater.
ĆIDSS1 = ±25 µA dc or ±100 percent of initial
value, whichever is greater.
12
Method 1042 of MIL-STD-750, test condition
Method 1042 of MIL-STD-750, test condition
A or TA = +175°C and t = 48 hours
A
13
Subgroup 2 and 3 of table I herein.
Subgroup 2 of table I herein.
ĆIGSSF1 = +20 nA dc or ±100 percent of initial
ĆIGSSF1 = +20 nA dc or ±100 percent of initial
value, whichever is greater.
value, whichever is greater.
ĆIGSSR1 = -20 nA dc or ±100 percent of initial
ĆIGSSR1 = -20 nA dc or ±100 percent of initial
value, whichever is greater.
value, whichever is greater.
ĆIDSS1 = ±25 µA dc or ±100 percent of initial
ĆIDSS1 = ±25 µA dc or ±100 percent of initial
value, whichever is greater.
value, whichever is greater.
ĆrDS(on)1 = ±20 percent of initial value.
ĆrDS(on)1 = ±20 percent of initial value.
ĆVGS(th)1 = ±20 percent of initial value.
ĆVGS(th)1 = ±20 percent of initial value.
*
17
Method 1081 of MIL-STD-750 (see 4.3.5)
Method 1081 of MIL-STD-750 (see 4.3.5)
Endpoints: Subgroup 2 of table I herein
Endpoints: Subgroup 2 of table I herein
(1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1 are measured.
(2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1 shall be invoked.
(3) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to
*
be repeated in screening requirements.
8



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