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MIL-PRF-19500-605 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Only\) Transistors, N-Channel, Silicon, Types 2N7292, 2N7294, 2N7296, And 2N7298, Jantxvm, D, R, H And Jansm, D And RThis specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened \(total dose only\), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

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MIL-PRF-19500/605D
TABLE I. Group A inspection - Continued.
Inspection
MIL-STD-750
Limits
Symbol
Unit
1/
Method
Condition
Min
Max
Subgroup 3
TC = TJ = +125°C
High temperature
operation:
±200
Gate current
3411
Bias condition C, VGS = +20 and
IGSS2
nA dc
-20 V dc, VDS = 0 V dc,
Drain current
3413
Bias condition C, VGS = 0 V dc,
IDSS2
1.0
mA dc
VDS = 100 percent of rated VDS
Drain current
3413
Bias condition C, VGS = 0 V dc,
IDSS3
0.25
mA dc
VDS = 80 percent of rated VDS
Static drain to source
3421
Condition A. VGS = 10 V dc,
rDS(on)3
on-state resistance
pulsed (see 4.5.1), ID = rated ID2
Ω
2N7292
0.140
Ω
2N7294
0.253
Ω
2N7296
0.444
Ω
2N7298
1.60
VDS ≥ VGS, ID = 1 mA
Gate to source voltage
3403
VGS(th)2
1.0
V dc
(threshold)
TC = TJ = -55°C
Low temperature
operation:
VDS ≥ VGS, ID = 0.25 mA
Gate to source voltage
3403
VGS(th)3
5.0
V dc
(threshold)
See footnotes at end of table.
10



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