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MIL-PRF-19500-605 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Only\) Transistors, N-Channel, Silicon, Types 2N7292, 2N7294, 2N7296, And 2N7298, Jantxvm, D, R, H And Jansm, D And RThis specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened \(total dose only\), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

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MIL-PRF-19500/605D
* 4.3 Screening (JANS and JANTXV levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500,
and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Measurement
Screen (see
table E-IV of
MIL-PRF-19500)
JANS level
JANTXV level
(1) (2)
(3)
Gate stress test (see 4.3.1)
Gate stress test (see 4.3.1)
(3)
EAS test, method 3470 of MIL-STD-750 (see
EAS test, method 3470 of MIL-STD-750 (see
4.3.2)
4.3.2)
(3) 3c
VSD test, method 3161 of MIL-STD-750 (see
VSD test, method 3161 of MIL-STD-750 (see
4.3.3)
4.3.3)
(4)
Subgroup 2 of table I herein
Subgroup 2 of table I herein
9
IGSSF1, IGSSR1, IDSS1
Not applicable
10
Method 1042 of MIL-STD-750, test condition
Method 1042 of MIL-STD-750, test condition
B
B
11
IGSSF1, IGSSR1, IDSS1, RDS(on)1, VGS(th)1
IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1
Subgroup 2 of table I herein.
Subgroup 2 of table I herein.
ĆIGSSF1 = ±20 nA dc or ±100 percent of initial
value, whichever is greater.
ĆIGSSR1 = ±20 nA dc or ±100 percent of initial
value, whichever is greater.
ĆIDSS1 = ±25 µA dc or ±100 percent of initial
value, whichever is greater.
12
Method 1042 of MIL-STD-750, test condition
Method 1042 of MIL-STD-750, test condition
A or TA = +175°C and t = 48 hours min (5)
A
13
Subgroup 2 and 3 of table I herein.
Subgroup 2 and 3 of table I herein.
ĆIGSSF1 = ±20 nA dc or ±100 percent of initial
ĆIGSSF1 = ±20 nA dc or ±100 percent of initial
value, whichever is greater
value, whichever is greater.
ĆIGSSR1 = ±20 nA dc or ±100 percent of initial
ĆIGSSR1 = ±20 nA dc or ±100 percent of initial
value, whichever is greater
value, whichever is greater.
ĆIDSS1 = ±25 µA dc or ±100 percent of initial
ĆIDSS1 = ±25 µA dc or ±100 percent of initial
value, whichever is greater
value, whichever is greater.
ĆRDS(on)1 = ±20 percent of initial value.
ĆRDS(on)1 = ±20 percent of initial value.
ĆVGS(th)1 = ±20 percent of initial value.
ĆVGS(th)1 = ±20 percent of initial value.
17
For TO-254AA packages: Method 1081 of
For TO-254AA packages: Method 1081 of
*
MIL-STD-750 (see 4.3.4), Endpoints:
MIL-STD-750 (see 4.3.4), Endpoints:
Subgroup 2 of table I herein.
Subgroup 2 of table I herein.
(1)
At the end of the test program, IGSSF1, IGSSR1 and IDSS1 are measured.
(2)
An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1 and VGS(th)1 shall be invoked.
(3)
Shall be performed any time before screen 9.
(4)
Shall be performed after VSD test, EAS test, and gate stress test.
(5)
Use of this accelerated screening option requires a 1,000-hour life test in accordance with applicable group E, subgroup 2
life test, and end-points specified herein to be provided to the qualifying activity for review and acceptance.
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