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MIL-PRF-19500-605 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Only\) Transistors, N-Channel, Silicon, Types 2N7292, 2N7294, 2N7296, And 2N7298, Jantxvm, D, R, H And Jansm, D And RThis specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened \(total dose only\), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

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MIL-PRF-19500/605D
Dimensions
Notes
Ltr
Inches
Millimeters
Min
Max
Min
Max
BL
.530
.550
13.46
13.97
CH
.249
.260
6.32
6.60
LD
.035
.045
0.89
1.14
LL
.520
.560
13.21
14.22
LO
.150 BSC
3.81 BSC
LS
.150 TYP
3.81 TYP
MHD
.139
.149
3.53
3.78
MHO
.665
.685
16.89
17.40
TL
.790
.800
20.07
20.32
3, 4
TT
.040
.050
1.02
1.27
3, 4
TW
.535
.545
13.59
13.84
Term
Drain
1
Term
Source
2
Term
Gate
3
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. All terminals are isolated from case.
4. The preferred measurements used herein are the metric units. However, this transistor was
designed using inch-pound units of measurement. In case of conflicts between the metric and
inch-pound units, the inch-pound units shall be the rule.
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
6. Die to base is BeO isolated, terminals to case ceramic (AL2O3) isolated.
FIGURE 1. Physical dimensions for TO-254AA (2N7292, 2N7294, 2N7296, and 2N7298).
3



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