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MIL-PRF-19500-605 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Only\) Transistors, N-Channel, Silicon, Types 2N7292, 2N7294, 2N7296, And 2N7298, Jantxvm, D, R, H And Jansm, D And RThis specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened \(total dose only\), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

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MIL-PRF-19500/605D
TABLE I. Group A inspection - Continued.
Inspection
MIL-STD-750
Limits
Symbol
Unit
1/
Method
Condition
Min
Max
Subgroup 7
Gate charge
3471
Condition B
On-state gate charge
Qg(on)
2N7292
314
nC
2N7294
298
nC
2N7296
264
nC
2N7298
264
nC
Gate to source charge
Qgs
2N7292
46
nC
2N7294
66
nC
2N7296
48
nC
2N7298
56
nC
Gate to drain charge
Qgd
2N7292
164
nC
2N7294
144
nC
2N7296
124
nC
2N7298
126
nC
Condition A. di/dt ≤ 100 A/µs, VDD
Reverse recovery time
3473
trr
≤ 30 V,ID = ID1, (see 1.3)
2N7292
1400
ns
2N7294
1700
ns
2N7296
2000
ns
2N7298
2300
ns
1/
For sampling plan, see MIL-PRF-19500.
2/
This test is required for the following end-point measurement only (not intended for screen 9, 11, or 13): JANS,
table E-VIA of MIL-PRF-19500, group B, subgroups 3 and 4; JANTXV, table E-VIB of MIL-PRF-19500, group B,
subgroups 2 and 3; and table E-VII of MIL-PRF-19500, group C, subgroup 6, and table E-IX of MIL-PRF-19500,
group E, subgroup 1.
12



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