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MIL-PRF-19500-605 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Only\) Transistors, N-Channel, Silicon, Types 2N7292, 2N7294, 2N7296, And 2N7298, Jantxvm, D, R, H And Jansm, D And RThis specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened \(total dose only\), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

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MIL-PRF-19500/605D
4.3.1 Gate stress test. Apply VGS = 30 V minimum for t = 250 µs minimum.
4.3.2 Single pulse avalanche energy (EAS).
a. IAS = IDM.
b. L = .1 mH.
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c. EAS = 1/2 LIAS .
d. Initial junction temperature = +25°C, +10°C, -5°C.
4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method
3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where appropriate).
Measurement delay time (tMD) = 70 µs max. See table III, group E, subgroup 4 herein.
* 4.3.4 Dielectric withstanding voltage.
a. Magnititude of test voltage...................................900 V dc.
b. Duration of application of test voltage....................15 seconds (min).
c. Points of application of test voltage........................All leads to case (bunch connection).
d. Method of connection.........................................Mechanical.
e. Kilovolt-ampere rating of high voltage source..........1,200 V/1.0 mA (min).
f. Maximum leakage current....................................1.0 mA.
g. Voltage ramp up time...................................................500 V/second.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein. (End-point electrical measurements shall be in accordance table I, subgroup 2 herein.)
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIA (JANS) and table E-VIB (JANTXV) of MIL-PRF-19500, and as follows. Electrical
measurements (end-points) shall be in accordance with table I, subgroup 2 herein.
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