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MIL-PRF-19500-605 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Only\) Transistors, N-Channel, Silicon, Types 2N7292, 2N7294, 2N7296, And 2N7298, Jantxvm, D, R, H And Jansm, D And RThis specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened \(total dose only\), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

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MIL-PRF-19500/605D
TABLE I. Group A inspection.
Inspection
MIL-STD-750
Limits
Symbol
Unit
1/
Method
Condition
Min
Max
Subgroup 1
Visual and mechanical
2071
inspection
Subgroup 2
°C/W
Thermal Impedance 2/
3161
See 4.3.3
ZθJX
Breakdown voltage,
3407
Bias condition C, VGS = 0V, ID = 1
V (BR)DSS
drain to source
mA dc
2N7292
100
V dc
2N7294
200
V dc
2N7296
250
V dc
2N7298
500
V dc
VDS ≥ VGS, ID = 1 mA
Gate to source voltage
3403
VGS(th)1
2.0
4.0
V dc
(threshold)
Gate current
3411
Bias condition C, VGS = +20 V dc,
IGSSF1
+100
nA dc
VDS = 0 V dc
Gate current
3411
Bias condition C, VGS = -20 V dc,
IGSSR1
-100
nA dc
VDS = 0 V dc
µA dc
Drain current
3413
Bias condition C, VGS = 0 V dc,
IDSS1
25
VDS = 80 percent of rated VDS
Static drain to source
3421
VGS = 10 V dc, condition A, pulsed
rDS(on)1
on-state resistance
(see 4.5.1), ID = rated ID2
Ω
2N7292
0.070
Ω
2N7294
0.115
Ω
2N7296
0.185
Ω
2N7298
0.615
Static drain to source
3421
VGS = 10 V dc, condition A, pulsed
rDS(on)2
on-state resistance
(see 4.5.1), ID = rated ID1
Ω
2N7292
0.074
Ω
2N7294
0.121
Ω
2N7296
0.194
Ω
2N7298
0.646
Forward voltage
4011
VGS = 0 V dc, ID = rated ID1, pulsed
VSD
1.8
V
(see 4.5.1)
See footnotes at end of table.
9



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