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MIL-PRF-19500-605 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Only\) Transistors, N-Channel, Silicon, Types 2N7292, 2N7294, 2N7296, And 2N7298, Jantxvm, D, R, H And Jansm, D And RThis specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened \(total dose only\), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

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MIL-PRF-19500/605D
TABLE I. Group A inspection - Continued.
Inspection
MIL-STD-750
Limits
Symbol
Unit
1/
Method
Condition
Min
Max
Subgroup 4
Switching time test
3472
ID = ID1, VGS = 10 V dc,
RG = 25 Ω, VDD = 50 percent of
VDS
Turn-on delay time
td(on)
2N7292
134
ns
2N7294
156
ns
2N7296
114
ns
2N7298
148
ns
Rise time
tr
2N7292
628
ns
2N7294
510
ns
2N7296
162
ns
2N7298
196
ns
Turn-off delay time
td(off)
2N7292
642
ns
2N7294
574
ns
2N7296
990
ns
2N7298
800
ns
Fall time
tf
2N7292
490
ns
2N7294
280
ns
2N7296
256
ns
2N7298
180
ns
Subgroup 5
Safe operating area test
3474
See figure 3, tp = 10 ms, VDS = 80
percent of max rated VDS, (VDS ≤
200 V)
Electrical
See table I, subgroup 2 herein
measurements
Subgroup 6
Not applicable
See footnotes at end of table.
11



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