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MIL-PRF-19500-605 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Only\) Transistors, N-Channel, Silicon, Types 2N7292, 2N7294, 2N7296, And 2N7298, Jantxvm, D, R, H And Jansm, D And RThis specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened \(total dose only\), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

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MIL-PRF-19500/605D
TABLE II. Group D inspection - Continued.
MIL-STD-750
Preirradiation limits
Postirradiation limits
Inspection
Method
Conditions
Symbol
R
R
Unit
1/ 2/ 3/
Min
Max
Min
Max
Drain to source on
3405
VGS = 10 V
VDSon
state voltage
condition A
pulsed (see 4.5.1)
ID = ID1
2N7292
1.84
1.84
V dc
2N7294
2.78
2.78
V dc
2N7296
3.30
3.30
V dc
2N7298
5.81
5.81
V dc
1/
For sampling plan see MIL-PRF-19500.
2/
Inspection requires all subgroup 2 (group D) measurements after exposure to both of the following insitu bias
conditions:
a.  VGS = 10 V; VDS = 0
b.  VGS = 0 V; VDS = 80 percent of rated VDS
3/
Each bias condition requires a separate total dose sample.
14



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