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MIL-PRF-19500-605 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Only\) Transistors, N-Channel, Silicon, Types 2N7292, 2N7294, 2N7296, And 2N7298, Jantxvm, D, R, H And Jansm, D And RThis specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened \(total dose only\), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

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MIL-PRF-19500/605D
TABLE II. Group D inspection.
MIL-STD-750
Preirradiation limits
Postirradiation limits
Inspection
Method
Conditions
Symbol
R
R
Unit
1/ 2/ 3/
Min
Max
Min
Max
Subgroup 1
Not applicable
TC = +25°C
Subgroup 2
Steady-state total
1019
2/, 3/
dose irradiation
End-point electricals:
Breakdown voltage,
3407
Bias condition C
V(BR)DSS
drain to source
VGS = 0, ID = 1 mA
2N7292
100
100
V dc
2N7294
200
200
V dc
2N7296
250
250
V dc
2N7298
500
500
V dc
VDS ≥ VGS
Gate to source voltage
3403
2.0
4.0
2.0
4.0
V dc
VGSth1
(threshold)
Gate current
3411
Bias condition C
100
100
nA dc
IGSSF1
VGS = 20 V
VDS = 0
Gate current
3411
Bias condition C
-100
-100
nA dc
IGSSR1
VGS = -20 V
VDS = 0
µA dc
Drain current
3413
Bias condition C
25
25
IDSS1
VGS = 0
VDS = 80 percent of rated
VDS (pre-irradiation)
Static drain to source
3421
VGS = 10 V, condition A
RDSon1
on-state resistance
pulsed (see 4.5.1)
ID= ID2
Ω
2N7292
0.070
0.070
Ω
2N7294
0.115
0.115
Ω
2N7296
0.185
0.185
Ω
2N7298
0.615
0.615
See footnotes at end of table.
13



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