INCH-POUND
The documentation and process conversion measures
necessary to comply with this document shall be
MIL-PRF-19500/182H
completed by 12 November 2011.
12 August 2011
SUPERSEDING
MIL-PRF-19500/182G
2 August 2006
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER,
TYPES 2N720A, 2N720AUB, 2N1893, AND 2N1893S, JANS, JAN, JANTX, JANTXV, JANHC2N720A,
JANKC2N720A, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH JANHCM, JANHCD,
JANHCP, JANHCL, JANHCR, JANHCF, JANHCG, JANHCH, JANKCM, JANKCD, JANKCP,
JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for for NPN silicon, low-power transistors.
Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500, two levels of
product assurance are provided for die. Radiation hardness assurance (RHA) level designators "M", "D", "P", "L" "R",
"F , "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.
1.2 Physical dimensions. See figure 1 (similar to TO-18) figure 2 (similar to TO-5), figure 3 (UB ), and figure 4
(JANHC and JANKC die layout).
*
1.3 Maximum ratings unless otherwise specified TA = +25°C.
Type
RθJSP(IS)
RθJC
PT2 (3) (4)
PT3 (3) (4)
VCEO
VEBO
IC
TJ and
PT1 (1) (2)
VCBO
RθJA
TC =
TSP =
TA =
TSTG
+25°C
+25°C
+25°C
W
W
W
V dc
V dc
V dc
mA dc
°C/W
°C/W
°C/W
°C
2N720A
1.8
0.5
120
80
7
500
325
97
-65 to
2N720AUB
1.16
0.5
120
80
7
500
325
150
+200
2N1893
3.0
0.8
120
80
7
500
195
58
2N1893S
3.0
0.8
120
80
7
500
195
58
(1) Derate linearly at 10.3 mW/°C for type 2N720A, 6.63 mW/°C for type 2N720AUB and see figure 5 (TO-5)
for type 2N1893 and 2N1893S for TC > +25°C.
(3) Derate linearly at 3.08 mW/°C for types 2N720A and 2N720AUB; TA > +37.5°C and see figure 7 (TO-5)
for types 2N1893 and 2N1893S for TA > +60°C.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.daps.dla.mil .
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