MIL-PRF-19500-182 Semiconductor Device, Transistor, Npn, Silicon, Low-Power Types 2N720A, 2N720Aub, 2N1893, 2N1893S, Jans, Jan, Jantx, Jantxv, Janhc2N720A And Jankc2N720A, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg,Jansh, Janhcm, Janhcd, Janhcl, Janhcr, Jancf, Janhcg, Janhch, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN silicon, low-power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500, two levels of product assurance are provided for die.Radiation hardness assurance \(RHA\) level designators ┬ôM┬ö, ┬ôD┬ö, ┬ôP┬ô, ┬ôL┬ö ┬ôR┬ö, ┬ôF┬Æ, ┬ôG┬ö, and ┬ôH┬ö are appended to the device prefix to identify devices which have passed RHA requirements.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15 - 16

MIL-PRF-19500/182H

Die size:

.030 x .030 inch (0.76 mm x 0.76 mm).

Die thickness:

.008 �.0016 inch (0.20 mm �0.041 mm).

Base pad

.004 x .010 inch (0.10 mm x 0.254 mm).

Emitter pad:

.0023 x .007 inch (0.058 mm x 0.18 mm).

Back metal:

Gold, 6.5 k� �1.95 k�.

Top metal:

Aluminum, 12 k�. Minimum; 14.5 k�. nominal.

Back side:

Collector.

SiO2, 7.5 k� �1.5 k�.

Glassivation:

NOTES:

1. Dimensions are in inches.

2. Metric equivalents are given for general information only.

3. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 4. JANHCA2N720A and JANKCA2N720A die dimensions.