MIL-PRF-19500-182 Semiconductor Device, Transistor, Npn, Silicon, Low-Power Types 2N720A, 2N720Aub, 2N1893, 2N1893S, Jans, Jan, Jantx, Jantxv, Janhc2N720A And Jankc2N720A, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg,Jansh, Janhcm, Janhcd, Janhcl, Janhcr, Jancf, Janhcg, Janhch, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN silicon, low-power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500, two levels of product assurance are provided for die.Radiation hardness assurance \(RHA\) level designators ┬ôM┬ö, ┬ôD┬ö, ┬ôP┬ô, ┬ôL┬ö ┬ôR┬ö, ┬ôF┬Æ, ┬ôG┬ö, and ┬ôH┬ö are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/182H

* TABLE III. Group E inspection (all quality levels) - for qualification or re-qualification only.

MIL-STD-750

Qualification

Inspection

Method

Conditions

Subgroup 1

45 devices

c=0

1051

Test condition C, 500 cycles

Temperature cycling

(air to air)

1071

Hermetic seal

Fine leak

Gross leak

See table I, subgroup 2 herein.

Electrical measurements

45 devices

Subgroup 2

c=0

1037

Intermittent life

Intermittent operation life: VCB = 10 V dc, 6,000 cycles. Adjust

device current, or power, to achieve a minimum ĆTJ of +100�C.

Electrical measurements

See table I, subgroup 2 herein.

Subgroup 4

Thermal resistance

3131

15 devices,

RθJSP(IS) can be calculated but shall be measured once in the

c=0

same package with a similar die size to confirm calculations

(may apply to multiple specification sheets).

Thermal impedance

See table E-IX of MIL-PRF-19500, group E, subgroup 4.

Sample size

curves.

N/A

Subgroup 5

Not applicable

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition B.