MIL-PRF-19500-182 Semiconductor Device, Transistor, Npn, Silicon, Low-Power Types 2N720A, 2N720Aub, 2N1893, 2N1893S, Jans, Jan, Jantx, Jantxv, Janhc2N720A And Jankc2N720A, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg,Jansh, Janhcm, Janhcd, Janhcl, Janhcr, Jancf, Janhcg, Janhch, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN silicon, low-power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500, two levels of product assurance are provided for die.Radiation hardness assurance \(RHA\) level designators ┬ôM┬ö, ┬ôD┬ö, ┬ôP┬ô, ┬ôL┬ö ┬ôR┬ö, ┬ôF┬Æ, ┬ôG┬ö, and ┬ôH┬ö are appended to the device prefix to identify devices which have passed RHA requirements.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15 - 16

MIL-PRF-19500/182H

* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table E-VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and

JANTXV) herein for group C testing. Electrical measurements (end-points) shall be in accordance with table I,

subgroup 2 herein.

4.4.3.1 Group C inspection (JANS), table E-VII of MIL-PRF-19500.

Subgroup

Method

Condition

2036

Test condition E (not applicable to the 2N720AUB).

3131

RθJA and RθJC only, as applicable (see 1.3 and 4.3.2).

1026

1,000 hours at VCB = 10 V dc; power shall be applied to achieve TJ = +150�C minimum and

a minimum of PD = 75 percent of maximum rated PT as defined in 1.3 n = 45, c = 0. The

sample size may be increased and the test time decreased as long as the devices are

stressed for a total of 45,000 device hours minimum, and the actual time of test is at least

340 hours.

4.4.3.2 Group C inspection (JAN, JANTX, and JANTXV), table E-VII of MIL-PRF-19500.

Method

Condition

Subgroup

2036

Test condition E (not applicable to the 2N720AUB).

RθJA and RθJC only, as applicable (see 1.3 and 4.3.2).

3131

1026

Not applicable.

4.4.3.3 Group C sample selection. Samples selected from group C inspection shall be chosen at random from

any lot containing the intended package type and lead finish procured to the same specification which is submitted to

and passes group A tests for conformance inspection. When the final lead finish is solder or any plating prone to

oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of final lead finish.

Testing of a group using a single device type enclosed in the intended package type shall be considered as

complying with the requirements for that subgroup.

* 4.4.4 Group D inspection. Conformance inspection for hardness assured JANS and JANTXV types shall include

the group D tests specified in table II herein. These tests shall be performed as required in accordance with

MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for

neutron fluence as applicable (see 6.2.e herein), except group D, subgroup 2 may be performed separate from other

subgroups. Alternate package options may also be substituted for the testing provided there is no adverse effect to

the fluence profile.

* 4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-

points) shall be in accordance with table I, subgroup 2 herein.

4.5 Method of inspection. Methods of inspection shall be as specified in appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of

MIL-STD-750.