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MIL-PRF-19500-182 Semiconductor Device, Transistor, Npn, Silicon, Low-Power Types 2N720A, 2N720Aub, 2N1893, 2N1893S, Jans, Jan, Jantx, Jantxv, Janhc2N720A And Jankc2N720A, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg,Jansh, Janhcm, Janhcd, Janhcl, Janhcr, Jancf, Janhcg, Janhch, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN silicon, low-power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500, two levels of product assurance are provided for die.Radiation hardness assurance \(RHA\) level designators ┬ôM┬ö, ┬ôD┬ö, ┬ôP┬ô, ┬ôL┬ö ┬ôR┬ö, ┬ôF┬Æ, ┬ôG┬ö, and ┬ôH┬ö are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/182H

* TABLE II. Group D inspection and end-point limits - Continued.

Symbol

Unit

Inspection 1/ 2/ 3/

MIL-STD-750

Limits

Method

Conditions

Min

Max

Subgroup 2

Steady-state total dose

1019

Gamma exposure VCES = 64 V

irradiation

Collector to base cutoff

3036

Bias condition D; VCB = 120 V dc;

ICBO1

200

�A dc

current

pulsed (see 4.5.1)

Emitter to base cutoff

3061

Bias condition D; VEB = 7.0 V dc;

IEBO1

200

�A dc

current

pulsed (see 4.5.1)

V(BR)CEO

V dc

Breakdown voltage,

3011

Bias condition D; IC = 30 mA dc;

pulsed (see 4.5.1)

collector - emitter

Breakdown voltage,

3011

Bias condition D; IC = 10 mA dc;

V(BR)CER

100

V dc

collector - emitter

pulsed (see 4.5.1), RBE = 10 Ω

Collector to base cutoff

3036

Bias condition D, VCB = 90 V dc

ICBO2

ηA dc

current

Emitter - base cutoff

3061

Bias condition D; VEB = 5 V dc

IEBO2

ηA dc

current

Collector � emitter

3071

IC = 150 mA dc; IB = 15 mA dc;

VCE(sat)1

5.75

V dc

saturated voltage

pulsed (see 4.5.1)

VCE(sat)2

Collector � emitter

3071

IC = 50 mA dc; IB = 5 mA dc;

1.38

V dc

saturated voltage

pulsed (see 4.5.1)

Base - emitter saturated

3066

Test condition A; IC = 150 mA dc;

VBE(sat)1

1.50

V dc

voltage

IB = 15 mA dc, pulsed (see 4.5.1)

Base - emitter saturated

3066

Test condition A; IC = 50 mA dc;

VBE(sat)2

1.38

V dc

voltage

IB = 5 mA dc, pulsed (see 4.5.1)

Forward-current transfer

3076

VCE = 10 V dc, IC = 0.1 mA dc,

[hFE1] 5/

[10]

ratio

pulsed (see 4.5.1)

Forward-current transfer

3076

VCE = 10 V dc, IC = 10 mA dc,

[hFE2] 5/

[17.5]

ratio

pulsed (see 4.5.1)

Forward-current transfer

3076

VCE = 10 V dc, IC = 150 mA dc,

[hFE3] 5/

[20]

120

ratio

pulsed (see 4.5.1)

Tests to be performed on all devices receiving radiation exposure.

For sampling plan, see MIL-PRF-19500.

Electrical characteristics apply to the corresponding AL, UA, UB, and UBC suffix versions unless otherwise noted.

See 6.2.e herein.

See method 1019 of MIL-STD-750, for how to determine [hFE] by first calculating the delta (1/hFE) from the pre-

and post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value

can never exceed the pre-radiation minimum hFE that it is based upon.