MIL-PRF-19500-182 Semiconductor Device, Transistor, Npn, Silicon, Low-Power Types 2N720A, 2N720Aub, 2N1893, 2N1893S, Jans, Jan, Jantx, Jantxv, Janhc2N720A And Jankc2N720A, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg,Jansh, Janhcm, Janhcd, Janhcl, Janhcr, Jancf, Janhcg, Janhch, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN silicon, low-power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500, two levels of product assurance are provided for die.Radiation hardness assurance \(RHA\) level designators ┬ôM┬ö, ┬ôD┬ö, ┬ôP┬ô, ┬ôL┬ö ┬ôR┬ö, ┬ôF┬Æ, ┬ôG┬ö, and ┬ôH┬ö are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/182H

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows.

RθJA

Thermal resistance junction to ambient.

Thermal resistance junction to case.

RθJC

Surface mount case outlines (see figure 3).

3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in

MIL-PRF-19500, and on figures 1, 2, 3, and 4.

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

* 3.4.2 Marking. Devices shall be marked in accordance with MIL-PRF-19500. The prefixes JAN, JANTX,

JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The radiation hardened designator M, D,

P, L, R, F, G, or H shall immediately precede (or replace) the device "2N" identifier (depending upon degree of

abbreviation required).

* 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and

test levels shall be as defined in MIL-PRF-19500.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I.

3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4 and tables I and II).