Semiconductor Dvcs Associated Hdwr Mil-Specs - FSC 5961

MIL-D-87157 - Displays, Diode, Light Emitting, Solid State, General Specification For (S/S By Mil-Prf-19500/708)

This specification establishes the general requirements for solid state, visible, single or multichip displays. Specific ratings, characteristics, requirement, and quality assurance provisions shall be as specified in the detail specification (see 3.1). Four levels of product assurance are provided in this specification by quality level designators A through D.

MIL-I-38526 - Insulator Disk, Semiconductor Device, General Specification For

This specification covers the general requirements for semiconductor device insulator disks fabricated from thermal film plastic, and serviceable in the temperature range from-260 degrees C to + 400 degrees C. The specific requirements for a particular type of insulator disk are listed in the applicable detail specifications.

MIL-I-38526/1 - Insulator Discs, Semiconductor Device

MIL-PRF-19500 - Semiconductor Devices, General Specification For

This specification establishes the general performance requirements for semiconductor devices. Product assurance is provided by effective screening, conformance inspection, and process controls to mitigate risk. Mission assurance and standardization of parts are the highest priorities. This specification establishes a heritage program of semiconductor devices the military and space community can rely on to be dependable and available. Detail requirements and characteristics are specified in the specification sheets. Revisions to this specification and specification sheets are structured to assure the interchangeability of devices of the same part type regardless of manufacturing date code or conformance inspection (CI) completion date. Four quality levels for encapsulated devices are provided for in this specification, differentiated by the prefixes JAN, JANTX, JANTXV, and JANS. Eight radiation hardness assurance (RHA) levels are provided for the JANTXV and JANS quality levels. These are designated by the letters M, D, P, L, R, F, G, and H following the quality level portion of the prefix. Two quality levels for unencapsulated devices are provided for in this specification, differentiated by the prefixes JANHC and JANKC.

MIL-PRF-19500/102 - Semiconductor Device, Transistors, Npn, Silicon, High Power Types 2N1016B, 2N1016C, And 2N1016D Jan

This specification covers the performance requirements for a high-power, NPN, silicon transistor. One level of product assurance is provided for each device type.

MIL-PRF-19500/108 - Semiconductor Device, Thyristors (Controlled Rectifiers), Silicon, Types 2N682, 2N683, 2N685 Through 2N692, 2N692A, 2N5206, Jan And Jantx

This specification covers the performance requirements for PNPN silicon power, reverse-blocking triode thyristors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/114 - Semiconductor Device, Diode, Silicon, Voltage Regulator, 1N2804B Through 1N2811B, 1N2813B, 1N2814B, 1N2816B, 1N2818B Through 1N2820B, 1N2822B Through 1N2827B, 1N2829B, 1N2831B Through 1N2838B, 1N2840B Through 1N2846B, And Rb Types, 1N4557B Through 1N4562B, And Rb Types, Jan, Jantx, Jantxv, And Jans

The specification covers the performance requirements for 50 watt silicon voltage regulator diodes. Forty-two devices, each with standard (B types) and reverse (RB types) polarity are addressed by this specification. Four levels of product assurance are provided for each device type as specified in MIL-�PRF-�19500.

MIL-PRF-19500/115 - Semiconductor Device, Diode, Silicon, Voltage Regulator, Types 1N3821A Through 1N3828A, 1N3016B Through 1N3051B, 1N3821A-�1 Through 1N3828A-�1, 1N3016B-�1 Through 1N3051B-�1, 1N3821Aur-�1 Through 1N3828Aur-�1, 1N3016Bur-�1 Through 1N3051Bur-�1, Plus C-� And D-� Tolerance Suffix, Jan, Jantx, Jantxv, And Janhc

This specification covers the performance requirements for 1 W, silicon, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided for each device type as specified in MIL-�PRF-�19500. One level of product assurance is provided for die.

MIL-PRF-19500/116 - Semiconductor Device, Diode, Silicon, Switching, Types 1N4148-1, 1N4148Ur-1, 1N4148Ub, 1N4148Ubca, 1N4148Ubcc, 1N4148Ubccc, 1N4148Ubd, 1N4148Ubcd, 1N4148Ub2, 1N4148Ub2R, 1N914, 1N914Ur, 1N4531, And 1N4531Ur, Jan, Jantx, Jantxv, Janhc, And Jankc

This specification covers the performance requirements for switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

MIL-PRF-19500/117 - Semiconductor Devices, Diode, Silicon, Voltage Regulator, Types 1N962B- 1 Through 1N992B-1, And 1N962Bur-1 Through 1N992Bur-1, 1N962C-1 Through 1N992C-1, And 1N962Cur-1 Through 1N992Cur-1, And 1N962D-1 Through 1N992D-1, 1N962Dur-1 Through 1N992Dur-1, Jan, Jantx, Jantxv, Janhc And Jankc

This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for each unencapsulated device type.

MIL-PRF-19500/118 - Semiconductor Device, Diode, Silicon, Types 1N483B, 1N485B, 1N486B, 1N5194, 1N5194Ur, 1N5194Us, 1N5195, 1N5195Ur, 1N5195Us, 1N5196, 1N5196Ur, And 1N5196Us, Jan, Jantx, And Jantxv

This specification covers the performance requirements for silicon diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/124 - Semiconductor Device, Diode, Silicon, Voltage Regulator Types 1N2970B Through 1N2977B, 1N2979B, 1N2980B, 1N2982B, 1N2984B Through 1N2986B, 1N2988B Through 1N2993B, 1N2995B, 1N2997B, 1N2999B Through 1N3005B, 1N3007B, 1N3008B, 1N3009B, 1N3011B, 1N3012B, 1N3014B, 1N3015B, Plus Rb Types, 1N3993A Through 1N3998A, And Ra Types, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for 10 watt, silicon voltage regulator diodes: A and B type (standard polarity); RA and RB type (reverse polarity). Four levels of product assurance are provided for each device type as specified in MIL-�PRF-�19500.

MIL-PRF-19500/127 - Semiconductor Devices, Diode, Silicon, Voltage Regulator, Types 1N4370A 1 Through 1N4372A-1 And 1N746A-1 Through 1N759A-1, 1N4370Aur-1 Through 1N4372Aur-1 And 1N746Aur-1 Through 1N759Aur-1, 1N4370C-1 Through 1N4372C-1 And 1N746C-1 Through 1N759C-1, 1N4370Cur-1 Through 1N4372Cur 1 And 1N746Cur-1 Through 1N759Cur-1, 1N4370D-1 Through 1N4372D-1 And 1N746D-1 Through 1N759D-...

This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator diodes with voltage tolerances of 5, 2, and 1 percent. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance is provided for each unencapsulated device.

MIL-PRF-19500/144 - Semiconductor Device, Diode, Silicon, Switching, Types 1N4454-1, 1N4454Ur-1, 1N4454Ub, 1N4454Ubca, 1N4454Ubcc, 1N4454Ubd, 1N3064, 1N4532, Jan, Jantx, Jantxv, Janhc, And Jankc

This specification covers the performance requirements for silicon, diffused, switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/156 - Semiconductor Device, Diode, Silicon, Low Level Voltage-Reference Temperature Compensated, Types 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, And 1N940B-1, 1N935Bur-1, 1N937Bur-1, 1N938Bur-1, 1N939Bur-1, And 1N940Bur-1, Jan, Jantx, Jantxv, And Jans, Radiation Hardened (Total Dose Only) Types Jantxvm, D, L, R, F, G, H, Jansm, D, L, R, F, G, H

This specification covers the performance requirements for 9.0 volts -�5 percent, silicon, low bias current, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven levels of radiation hardened (total dose only) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

MIL-PRF-19500/157 - Semiconductor Device, Diode, Silicon, Temperature Compensated Voltage-Reference, Types 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941Bur-1, 1N943Bur-1, 1N944Bur-1, 1N945Bur-1, And 1N946Bur-1, Jan, Jantx, Jantxv, And Jans, Radiation Hardened (Total Dose Only) Jantxvm, D, L, R, F, G, H, And Jansm, D, L, R, F, G, And H

This specification covers the performance requirements for 11.70 volts -�5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven levels of radiation hardened (total dose only) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

MIL-PRF-19500/158 - Semiconductor Device, Diode, Silicon, Temperature Compensated, Voltage-Reference, Types 1N3154-1, Through 1N3157-1, And 1N3154Ur-1 Through 1N3157Ur-1, Jan, Jantx, Jantxv, And Jans, Radiation Hardened (Total Dose Only) Jantxvm, D, L, R, F, G, H, And Jansm, D, L, R, F, G, H

This specification covers the performance requirements for 8.4 volts -�5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven levels of radiation hardened (total dose only) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

MIL-PRF-19500/159 - Semiconductor Device, Diode, Silicon, Temperature Compensated, Voltage-Reference, Types 1N821-1, 1N823-1, 1N825-1, 1N827-1, And 1N829-1, 1N821Ur-1, 1N823Ur-1, 1N825Ur-1, 1N827Ur-1, And 1N829Ur-1, Jan, Jantx, Jantxv, Jans, Janhc And Jankc; Radiation Hardened (Total Dose Only) Types Jantxvm, D, L, R, F, G, H; Jansm, D, L, R, F, G, H; Janhcm, D, L, R, F, G, H; And Jankcm, ...

This specification covers the performance requirements for 6.2 volts -�5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type. Seven levels of radiation hardened (total dose only) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type.

MIL-PRF-19500/162 - Semiconductor Devices, Diode, Silicon, Power Rectifier, Types 1N1614, 1N1615, 1N1616, 1N4458, 1N4459, 1N1614R, 1N1615R, 1N1616R, 1N4458R, 1N4459R, Jan And Jantx

This specification covers the performance requirements for silicon, power rectifier diodes. Two levels of product assurance are provided for each device as specified in MIL-PRF-19500.

MIL-PRF-19500/168 - Semiconductor Device, Thyristors (Controlled Rectifiers), Silicon, Types 2N1771A, 2N1772A, 2N1774A, 2N1776A, 2N1777A, 2N1778A, And 2N2619A, Jan, Jantx, And Jantxv

This specification covers the performance requirements for PNPN, silicon power, reverse-blocking triode thyristors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/169 - Semiconductor Device, Diode, Silicon, Switching, Types 1N3070, 1N3070-1, 1N3070Ur-1, 1N4938, 1N4938-1, 1N4938Ur-1, Jan, Jantx, Jantxv, Janhc, And Jankc

This specification covers the performance requirements for silicon, switching diodes. Three levels of product assurance are provided for each device type and two product assurance levels are provided for die, as specified in MIL-PRF-19500.

MIL-PRF-19500/177 - Semiconductor Device, Transistor, Pnp, Silicon Low-Power Types 2N1131, 2N1131L, 2N1132, 2N1132L, Jan, Jantx And Jantxv

This specification covers the performance requirements for PNP silicon low-power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/181 - Semiconductor Device, Transistor, Npn, Silicon, Low-Power Types 2N718A, 2N1613 And 2N1613L, Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN silicon, low-power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/182 - Semiconductor Device, Transistor, Npn, Silicon, Low-Power Types 2N720A, 2N720Aub, 2N1893, 2N1893S, Jans, Jan, Jantx, Jantxv, Janhc2N720A And Jankc2N720A, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg,Jansh, Janhcm, Janhcd, Janhcl, Janhcr, Jancf, Janhcg, Janhch, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And Jankch

This specification covers the performance requirements for NPN silicon, low-power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500, two levels of product assurance are provided for die.Radiation hardness assurance (RHA) level designators -�M-�, -�D-�, -�P-�, -�L-� -�R-�, -�F-�, -�G-�, and -�H-� are appended to the device prefix to identify devices which have passed RHA requirements.

MIL-PRF-19500/187 - Semiconductor Diode, Silicon, High-Voltage Type Jan1N2361

This specification covers the performance requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/193 - Semiconductor Device, Diode, Silicon, Rectifier Types 1N457, 1N458, And 1N459, Jan

This specification covers the performance requirements for silicon diode rectifiers. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/198 - Semiconductor Device, Thyristors, Types 2N1870A, 2N1871A, 2N1872A, And 2N1874A, Jan

This specification covers the performance requirements for silicon thyristors. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/199 - Semiconductor Device, Diode, Silicon, Forward-Voltage Regulator, Type 1N816, Jan

This specification covers the performance requirements for silicon, forward-voltage regulator, with a nominal forward-voltage drop of 0.64 V dc at 1 mA dc and with the following ratings and characteristics. One level of product assurance is provided for each type of device type as specified in MIL-PRF-19500.

MIL-PRF-19500/211 - Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N3164, 1N3168, 1N3170, 1N3172, 1N3174, 1N3175, 1N3176, 1N3177 And R Types Jan, Jantx, And Jantxv

This specification covers the detail requirements for silicon power rectifier. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.

MIL-PRF-19500/225 - Semiconductor Device, Transistor, Npn, Silicon, Types 2N1711, 2N1711S, 2N1890, And 2N1890S, Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN, silicon, low-power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/228 - Semiconductor Device, Diode, Silicon, Rectifier, Types 1N3611, 1N3612, 1N3613, 1N3614, 1N3957, Jan And Jantx

This specification covers the performance requirements for 1.0 ampere silicon rectifier diodes. Two levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

MIL-PRF-19500/231 - Semiconductor Device, Diode, Silicon, Switching, Types 1N4150-1, 1N4150Ur-1, 1N4150Ub, 1N4150Ubca, 1N4150Ubcc, 1N4150Ubd, And 1N3600, Jan, Jantx, Jantxv, Janhc, And Jankc

This specification covers the performance requirements for controlled forward voltage switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/240 - Semiconductor Device, Diode, Silicon, Rectifier, Types 1N645-1, 1N647-1, 1N649-1, 1N645Ur-1, 1N647Ur-1, 1N649Ur-1, Jan, Jantx, And Jantxv 1/

This specification covers the performance requirements for use as a general purpose silicon rectifier diode or as a low speed switching rectifier diode. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/241 - Semiconductor Device, Diode, Silicon, Low Leakage, Controlled Forward Voltage, Types 1N3595-1, 1N3595Ub, 1N3595Ubca, 1N3595Ubd, 1N3595Ubcc, 1N3595Ub2, 1N3595Ub2R, 1N3595Us, 1N3595Ur-1, 1N3595A-1, 1N3595Aus, And 1N3595Aur-1, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for silicon, controlled forward voltage diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die.

MIL-PRF-19500/246 - Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N3289, 1N3291, 1N3293, 1N3294, 1N3295, And R Types, Jan, Jantx And Jantxv

This specification covers the performance requirements for silicon power rectifiers. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/251 - Semiconductor Device, Transistor, Npn, Silicon, Switching, Types 2N2218, 2N2218A, 2N2218Al, 2N2219, 2N2219A, And 2N2219Al, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And Jansh

This specification covers the performance requirements for NPN, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/253 - Semiconductor Device, Transistor, Npn, Silicon, Low-Power, Types 2N930 And 2N930Ub, Jan, Jantx, Jantxv, Jans, Janhc, Jankc Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And Jankch

This specification covers the performance requirements for an NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device. RHA level designators "M", "D", "P", "L" "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

MIL-PRF-19500/255 - Semiconductor Device, Transistor, Npn, Silicon, Switching, Types 2N2221A, 2N2221Al, 2N2222A, 2N2222Al, 2N2221Aua, 2N2222Aua, 2N2221Aub, 2N2222Aub, 2N2221Aubc, And 2N2222Aubc, 2N2221Aubn, 2N2222Aubn, 2N2221Aubcn, 2N2222Aubcn, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, ...

This specification covers the performance requirements for NPN, silicon, switching transistors. Five levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/260 - Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A, And Ar Versions, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc, 1N1124A, 1N1126A, 1N1128A, 1N3649, 1N3650, 1N1124Ra, 1N1126Ra, 1N1128Ra , 1N3649R, And 1N3650R, Jan Only

This specification covers the performance requirements for silicon semiconductor power rectifier diodes. Four levels of product assurance are provided for each encapsulated 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type. One level of product assurance is provided for each device type as specified in MIL-PRF-19500, for the 1N1124A, 1N1126A, 1N1128A, 1N3649, 1N3650. For normal and reverse (A, R, RA, and AR suffix) type devices see 3.4.1.

MIL-PRF-19500/262 - Semiconductor Device, Transistor, Npn, Silicon, High-Power Types 2N1722 And 2N1724, Jan And Jantx

This specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/270 - Semiconductor Device, Unitized, Dual-Transistor, Npn, Silicon, Types 2N2060 And 2N2060L, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for two electrically isolated, matched NPN, silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/276 - Semiconductor Device, Thyristors (Controlled Rectifiers), Silicon, Types 2N2323, 2N2324, 2N2326, 2N2328, 2N2329, And S And U4 Versions, 2N2323A, 2N2324A, 2N2326A, 2N2328A, 2N2329A, And As And Au4 Versions, Jan, Jantx, And Jantxv

This specification covers the performance requirements for PNPN, silicon, reverse-blocking-triode thyristors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/279 - Semiconductor Device, Diode, Types 1N3644, 1N3645, 1N3646, And 1N3647 Jan And Jantx

This specification covers the detail requirements for 0.1 ampere silicon rectifiers. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/286 - Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N4245 Through 1N4249, Jan, Jantx, Jantxv, And Janhc

This specification covers the performance requirements for silicon, power rectifier, medium-recovery diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/287 - Semiconductor Device, Transistor, Npn Silicon, Switching, Type 2N3013, Jan And Jantx

This specification covers the performance requirements for NPN, silicon switching transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/290 - Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types, 2N2904, 2N2904A, 2N2904Al, 2N2905, 2N2905A, And 2N2905Al, Jan, Jantx, Jantxv, Jans, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And Jansh

This specification covers the performance requirements for PNP, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provision for radiation hardness assurance (RHA) to four radiation test levels is provided for JANTXV and JANS product assurance levels for type 2N2905A. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

MIL-PRF-19500/291 - Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types 2N2906A, 2N2906Al, 2N2907A, 2N2907Al, 2N2906Aua, 2N2907Aua, 2N2906Aub, 2N2906Aubc, 2N2907Aub, 2N2907Aubc, 2N2906Aubn, 2N2906Aubcn, 2N2907Aubn, And 2N2907Aubcn, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh Janhc, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jank...

This specification covers the performance requirements for PNP, silicon, switching transistors. Five levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance (RHA) level designators "M", "D", "P", "L" "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

MIL-PRF-19500/295 - Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, Jan And Ub

This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/296 - Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2609, Jan And Ub

This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/297 - Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N1184, 1N1186, 1N1188, 1N1190, 1N3766, 1N3768, 1N1184R, 1N1186R, 1N1188R, 1N1190R, 1N3766R, 1N3768R, Jan, Jantx, And Jantxv

This specification covers the performance requirements for silicon semiconductor power rectifier diodes. Three levels of product assurance are provided for each device as specified in MIL-PRF-19500.

MIL-PRF-19500/301 - Semiconductor Device, Transistor, Npn Silicon, Low-Power, Type 2N918 And 2N918Ub, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Jankc, Janhcb, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And Jankch

This specification covers the detail requirements for NPN, silicon, ultra-high frequency transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for unencapsulated devices. RHA level designators "M", "D", "P", "L" "R","F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

MIL-PRF-19500/302 - Semiconductor Device, Transistor, Npn, Silicon, Low-Power, Types 2N2708, Jan

This specification covers the performance requirements for NPN, silicon, VHF-UHF amplifier transistor. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/304 - Semiconductor Device, Diode, Silicon, Power Rectifier, Fast-Recovery Types 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893, 1N3890R, 1N3891R, 1N3893R And A-Versions Jan, Jantx, Jantxv, Jans, Janhc And Jankc

This specification covers the performance requirements for 12 and 20 ampere, silicon fast recovery, power, rectifier diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type.

MIL-PRF-19500/308 - Semiconductor Device, Diode, Silicon, Power Rectifier, Fast-Recovery Types 1N3909, 1N3910, 1N3911, 1N3912, 1N3913, R And A Versions Jan, Jantx, And Jantxv

This specification covers the performance requirements for silicon, semiconductor fast recovery, power rectifier diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/312 - Semiconductor Device, Transistor, Npn, Silicon, Switching Type 2N708, Jan, Jantx, And Janhc

This specification covers the detail requirements for NPN silicon switching transistors. Two levels of product assurance are provided for the device type as specified in MIL-PRF-19500. One level of product assurance is provided for die.

MIL-PRF-19500/313 - Semiconductor Device, Transistor, Npn, Silicon, Low Power, Types 2N2432, 2N2432A, 2N2432Ub, 2N2432Aub, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for low power, high speed chopper, NPN silicon transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die.

MIL-PRF-19500/315 - Semiconductor Device, Transistor, Npn, Silicon, Power Types 2N2880, 2N3749, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for NPN, silicon, power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/317 - Semiconductor Device, Transistor, Npn, Silicon, Switching, Types 2N2369A, 2N3227, 2N4449, 2N2369Au, 2N3227U, 2N2369Aua, 2N3227Ua, 2N2369Aub, 2N2369Aubc, 2N2369Aubcn 2N3227Ub, 2N3227Ubc, 2N3227Ubcn, 2N4449U, 2N4449Ua, 2N4449Ub, 2N4449Ubc, And 2N4449Ubcn, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Janhcb, Jankca, Jankcb, Jank...

This specification covers the performance requirements for NPN, silicon, high speed switching transistors (including dual devices). Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to four radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators -�M-�, -�D-�, -�P-�, -�L-�, -�R-�, -�F-�, -�G-�, and -�H-� are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/323 - Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types 2N3250A, 2N3251A, 2N3250Aub, 2N3251Aub, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jan...

This specification covers the performance requirements for PNP silicon switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

MIL-PRF-19500/336 - Semiconductor Device, Unitized, Dual-Transistor, Pnp, Silicon, Types 2N3810, 2N3810L, 2N3810U, 2N3811, 2N3811L, And 2N3811U, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Janhcf, Janhcg, Jansh, Janhca, Janhcb, Jankca, Jankcb, Jankam, Jankad, Jankap, Jankal, Jankar, Jankcaf, Jankcag, And Jankcah

This specification covers the performance requirements for two electrically isolated, matched PNP, silicon transistors as one dual unit. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-�PRF-�19500, and two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance (RHA) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/337 - Semiconductor Device, Silicon, Switching, Types 1N4153-1, 1N4153Ur-1, 1N4153Ub, 1N4153Ubca, 1N4153Ubcc, 1N4153Ubd, 1N4153Ubn, 1N4153Ubnd, 1N4534, And 1N4534Ub, Jan, Jantx, Jantxv, Janhc, And Jankc

This specification covers the performance requirements for controlled forward voltage switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

MIL-PRF-19500/343 - Semiconductor Device, Transistor, Npn, Silicon, Low Power, Types 2N2857 And 2N2857Ub, Jan, Jantx, Jantxv, And Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Janhcf, Janhcg, Jansh, Janhc, And Jankc

This specification covers the performance requirements for NPN, silicon, low power, ultra-high frequency transistors. Four levels of product assurance are provided for each device type. Two levels of product assurance are provided for unencapsulated devices as specified in MIL-PRF-19500. RHA level designators "M", "D", "P", "L", "R",

MIL-PRF-19500/347 - Semiconductor Device, Transistor, Npn, Silicon, Power Types: 2N3253, 2N3253S, 2N3444, 2N3444S, Jan, And Jantx

This specification covers the detail requirements for NPN silicon power transistors. Two levels of product assurance is provided for the device type as specified in MIL-S-19500.

MIL-PRF-19500/348 - Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types 2N3467, 2N3467L, 2N3468, 2N3468L, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for PNP silicon switching transistors. Four levels of product assurance is provided for the device type as specified in MIL-PRF-19500.

MIL-PRF-19500/349 - Semiconductor Device, Transistor, Npn, Silicon, Switching, Types 2N3506, 2N3506A, 2N3506L, 2N3506Al, 2N3506U4, 2N3506Au4, 2N3507, 2N3507L, 2N3507A, 2N3507Al, 2N3507U4, And 2N3507Au4, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Jankca, Jankcam, Jankcad, Jankcap, Jankcal, Jankcar, Jankcaf, Jankcag, And Jankcah

This specification covers the performance requirements for NPN, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/350 - Semiconductor Device, Transistor, Pnp, Silicon, Low Power Types 2N3867, 2N3867S, 2N3867U4, 2N3868, 2N3868S, And 2N3868U4, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Jankcb, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And Jankcbh

This specification covers the performance requirements for PNP, silicon, switching transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/354 - Semiconductor Device, Transistor, Pnp, Silicon, Low-Power, Types 2N2604, 2N2604Ub, 2N2605, And 2N2605Ub, Jan, Jantx, Jantxv, And Jans, Janhc, Jankc

This specification covers the performance requirements for PNP, silicon, low-power transistors for use in low noise level amplifier applications. Four levels of product assurance are provided for each encapsulated device type and two levels for each unencapsulated device type as specified in MIL-PRF-19500.

MIL-PRF-19500/355 - Semiconductor Device, Unitized Dual Transistor, Npn, Silicon, Types 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, And 2N2920U, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And Jankch

This specification covers the performance requirements for two electrically isolated, matched NPN silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type die. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/356 - Semiconductor Device, Diode, Silicon, Voltage Regulator, Types 1N4954 Through 1N4996, 1N5968, 1N5969,And 1N6632 Through 1N6637, 1N4954Us Through 1N4996Us, 1N5968Us, 1N5969Us, And 1N6632Us Through 1N6637Us, And C And D Tolerance Suffix Devices, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for silicon, voltage regulator diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

MIL-PRF-19500/357 - Semiconductor Device, Transistor, Pnp, Silicon, Amplifier, Types 2N3634 Through 2N3637, 2N3634Ub Through 2N3637Ub, 2N3634Ubn Through 2N3637Ubn, 2N3634L Through 2N3637L, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Jankca, Jankcam, Jankcad, Jankcap, Jankcal, Jankcar, Jankcaf, Jankcag, Jankcah, Janhcb, Jankcb, Jankcbm, Jankcbd,...

This specification covers the performance requirements for PNP, silicon, low-power amplifier, and switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for unencapsulated devices. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/358 - Semiconductor Device, Diode, Silicon, Voltage Regulator, Types 1N3305B Through 1N3350B And Rb, 1N4549B Through 1N4554B And Rb, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for 50 watt, silicon, voltage regulator diodes: B type (standard polarity) and RB type(reverse polarity). Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/359 - Semiconductor Device, Diode, Silicon, Fast Recovery, Power Rectifier, 1N4942, 1N4944, 1N4946, 1N4947, And 1N4948, Jan, Jantx, And Jantxv

This specification covers the performance requirements for a silicon, fast recovery semiconductor power rectifier diode for use in equipment circuits. Three levels of product assurance are provided for each device as specified in MIL-PRF-19500.

MIL-PRF-19500/366 - Semiconductor Device, Transistor, Npn, Silicon, Amplifier, Types 2N3498, 2N3498L, 2N3498U4, 2N3499, 2N3499L, 2N3499U4, 2N3500, 2N3500L, N3500U4, 2N3501, 2N3501L, 2N3501Ub, And 2N3501U4, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Janhcc, Jankcb, Jankcc, Jankccm, Jankccd, Jankccp, Jankccl, Jankccr, Jankccf, ...

This specification covers the performance requirements for NPN, silicon, low-power amplifier and switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. Radiation hardness assurance (RHA) level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

MIL-PRF-19500/368 - Semiconductor Device, Transistor, Npn, Silicon, Low-Power Types: 2N3439, 2N3439L, 2N3439Ua, 2N3439U4, 2N3440, 2N3440L, 2N3440Ua, And 2N3440U4, Jan, Jantx, Jantxv, Jans, Janhcb, Jankcb, Janhcc, Jankcc Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And Jankcbh

This specification covers the performance requirements for NPN, silicon, low-power, high voltage transistors. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/369 - Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N3441, Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN, silicon, power transistor. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/37 - Semiconductor Device, Transistor, Npn, Silicon, Low-Power Types 2N333, 2N335, 2N336, 2N333A, 2N335A, 2N336A, 2N333T2, 2N335T2, 2N336T2, 2N333Lt2, 2N335Lt2, 2N336Lt2 2N333At2, 2N335At2, 2N336At2, 2N333Alt2, 2N335Alt2, And 2N336Alt2, Jan

This specification covers the performance requirements for NPN, silicon, low-power transistors.

MIL-PRF-19500/370 - Semiconductor Device, Transistor, Npn, Silicon, High-Power, Type 2N3442, Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN silicon, high-power transistor. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/371 - Semiconductor Device, Transistor, Npn, Silicon, High Power, Types 2N3902, 2N3902T1, 2N3902T3, 2N5157, 2N5157T1, And 2N5157T3, Jan, Jantx And Jantxv

This specification covers the performance requirements for NPN silicon, high-power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/374 - Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N3996 Through 2N3999, Jan, Jantx, Jantxv, Jans, Janhc And Jankc

This specification covers the performance requirements for NPN silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated die.

MIL-PRF-19500/375 - Semiconductor Device, Transistor, Field-Effect, N-Channel, Depletion Mode, Silicon,Types 2N3821, 2N3821Ub, 2N3822, 2N3822Ub, 2N3823, And 2N3823Ub, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for N-channel, junction, silicon, field-effect depletion mode transistors. Four levels of product assurance are provided for each device type as specified in

MIL-PRF-19500/376 - Semiconductor Device, Transistor, Npn, Silicon, Low-Power, Types 2N2484, 2N2484Ua, 2N2484Ub, 2N2484Ubc, 2N2484Ubn, 2N2484Ubcn Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh Janhca, Janhcb, Jankca, Jankcb, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And Jankch

This specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/379 - Semiconductor Device, Transistor, Pnp, Silicon, High-Power, Types 2N3791 And 2N3792, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for PNP silicon, high-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/382 - Semiconductor Device, Transistor, Pnp, Silicon, Low-Power, Types 2N2944A, 2N2945A, 2N2945Am, And 2N2946A, 2N2944Aub, 2N2945Aub, 2N2945Aubm, And 2N2946Aub, Jan, Jantx, Jantxv, Jans, Janhc, Jankc, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, A...

This specification covers the performance requirements for low-power, high-speed chopper, PNP, silicon transistors. A -�M-� and UB-�M-� suffix will indicate a matched pair. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance (RHA) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

MIL-PRF-19500/383 - Semiconductor Device, Diode, Silicon, Voltage-Variable Capacitor Types 1N5139A Through 1N5148A Jan, Jantx And Jantxv

This specification covers the performance requirements for a silicon, voltage-variable-capacitor diode. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

MIL-PRF-19500/384 - Semiconductor Device, Transistor, Npn, Silicon High-Power, Types 2N3584, 2N3585, Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided for this device type as specified in MIL-PRF-19500.

MIL-PRF-19500/385 - Semiconductor Device, Field Effect Transistors, N-Channel, Silicon Types 2N4856 Through 2N4861, 2N4856Ub Through 2N4861Ub, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for N-channel, depletion mode, silicon J-FET transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF 19500.

MIL-PRF-19500/391 - Semiconductor Device, Transistor, Npn, Silicon, Low-Power Types 2N3019, 2N3019S, 2N3057A, 2N3700, And 2N3700Ub, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Janhcb, Jankca, Jankcb Jankcbm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And Jankch

This specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated device type 2N3700. Provisions for radiation hardness assurance (RHA) to three radiation levels is provided for JANTXV JANS, JANHC, and JANKC product assurance levels. Radiation hardness assurance (RHA) level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/392 - Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types 2N3485A And 2N3486A, Jan, Jantx, And Jantxv

This specification covers the performance requirements for PNP silicon switching transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/393 - Semiconductor Device, Transistor,Npn, Silicon Power, Types 2N3418, 2N3418S, 2N3418U4, 2N3419, 2N3419S, 2N3419U4, 2N3420, 2N3420S, 2N3420U4, 2N3421, 2N3421S, And 2N3421U4, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcc, Jankcc, Jankccm, Jankccd, Jankccp, Jankccl, Jankccr, Jankccf, Jankccg, And Jankcch

This specification covers the performance requirements for NPN, silicon, transistors for use in medium power switching applications. Four levels of product assurance are provided for each device type, and two levels of product assurance for die (element evaluation) are provided, as specified in MIL-PRF-19500. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/394 - Semiconductor Device, Transistor, Npn, Silicon, Power Switching, Types: 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, And 2N5238S, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Janhcb, Jankca, Jankcb, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg,And Jankch

This specification covers the performance requirements for NPN, silicon, low-power, high voltage transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to four radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

MIL-PRF-19500/395 - Semiconductor Device, Transistor, Npn, Silicon, Switching, Types 2N3735, 2N3735L, 2N3737, And 2N3737Ub, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And Jansh

This specification covers the performance requirements for NPN, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for unencapsulated devices. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/396 - Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types 2N3762, 2N3762L, 2N3762U4, 2N3762Ua, 2N3763, 2N3763L, 2N3763U4, 2N3763Ua, 2N3764, And 2N3765, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh Janhca, Jankca, Jankcam, Jankcad, Jankcap, Jankcal, Jankcar, Jankcaf, Jankcag, And Jankcah

This specification covers the performance requirements for PNP silicon switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/397 - Semiconductor Device, Transistor, Pnp, Silicon, Types 2N3743, 2N3743U4, 2N4930, 2N4930U4, 2N4931, And 2N4931U4, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for PNP, silicon, high-voltage transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance for die are provided for each unencapsulated device type as specified in MIL-PRF-19500.

MIL-PRF-19500/398 - Semiconductor Device, Transistor, Npn, Silicon, High-Frequency, Types 2N3866, 2N3866A, 2N3866Ub, 2N3866Aub, Jan, Jantx, Jantxv, Jans, Janhc, Jankc, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And Jankch

This specification covers the performance requirements for NPN silicon, VHF-UHF amplifier transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. Radiation hardness assurance (RHA) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

MIL-PRF-19500/399 - Semiconductor Device, Transistor, Npn, Silicon, Switching Type 2N3960 And 2N3960Ub Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, A...

This specification covers the performance requirements for NPN silicon, switching transistors. Four levels of product assurance are provided for each device type and two levels for unencapsulated die as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

MIL-PRF-19500/402 - Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N3739, Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/404 - Semiconductor Device, Diode, Silicon, Rectifier, Module High Voltage, 1N5597, 1N5600, 1N5603, Jan, Jantx And Jantxv

This specification covers the performance requirements for silicon, high voltage, rectifier modules. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/406 - Semiconductor Devices, Diode, Silicon, Voltage Regulator, Types 1N4460, 1N4460C, 1N4460D Through 1N4496, 1N4496C, 1N4496D, And 1N6485, 1N6485C, 1N6485D Through 1N6491, 1N6491C, 1N6491D, 1N4460Us, 1N4460Cus, 1N4460Dus Through 1N4496Us, 1N4496Cus, 1N4496Dus, And 1N6485Us, 1N6485Cus, 1N6485Dus Through 1N6491Us, 1N6491Cus, 1N6491Dus, 1N4460Um Through 1N4496Um, Plus C And D ...

This specification covers the performance requirements for micro-miniature 1.5 watt silicon, low leakage, voltage regulator diodes with tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-�PRF-�19500.

MIL-PRF-19500/407 - Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N3055, Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN, silicon, power, transistor. Three levels of product assurance is provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/408 - Semiconductor Device, Transistor, Npn, Silicon, High-Power, Types 2N3715 And 2N3716, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for NPN, silicon, high-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/411 - Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, 1N5415 Through 1N5420, 1N5415Us Through 1N5420Us, Jan, Jantx, Jantxv, Jans, Jantxvm, Jantxvd, Jantxvr, Jantxvh, Jansm, Jansd, Jansr, And Jansh

This specification covers the performance requirements for silicon rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provision for radiation hardness assurance (RHA) to four radiation test levels is provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", "R", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

MIL-PRF-19500/412 - Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N3846, 2N3846T1, 2N3846T3, 2N3847, 2N3847T1, And 2N3847T3, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for NPN, silicon, power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/413 - Semiconductor Device, Transistor, Npn, Silicon, High-Power, Types 2N3771 And 2N3772, Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN silicon, high-power transistors for use in high-speed power-switching applications. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/415 - Semiconductor, Device, Transistor, Npn, Silicon, High-Power Types 2N2812 And 2N2814 Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN, silicon, high-power transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

MIL-PRF-19500/420 - Semiconductor Device, Diode, Silicon, Power, Rectifier, Types 1N5550 Through 1N5554, 1N5550Us Through 1N5554Us, Jan, Jantx, Jantxv, Jans, Janhca, Janhcb, Janhcc, Janhcd, Janhce, Jankca, Jankcd, And Jankce

This specification covers the performance requirements for silicon, general purpose, semiconductor diodes. The diode is non cavity double plug construction, with high temperature metallurgical bonds (category 1) between both sides of the silicon die and terminal pins. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

MIL-PRF-19500/421 - Semiconductor Device, Dual Transistor, Unitized, Npn/Pnp, Complementary, Silicon, Types 2N3838, 2N4854, And 2N4854U, Jan, Jantx, And Jantxv

This specification covers the performance requirements for unitized, dual transistors which contain a pair of electrically isolated complementary NPN and PNP silicon triode transistors in one package. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/423 - Semiconductor Device, Transistor, Npn, Silicon, Switching, Types 2N5581 And 2N5582, Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN, silicon, switching transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/424 - Semiconductor Device, Diode, Silicon, Fast Recovery, Power Rectifier, 1N5186, 1N5187, 1N5188, And 1N5190, Jan, Jantx, And Jantxv

This specification covers the detail requirements for silicon, fast recovery rectifier diodes. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.

MIL-PRF-19500/426 - Semiconductor Device, Transistor, Pnp, Silicon, Amplifier Type 2N4957 And 2N4957Ub, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, ...

This specification covers the performance requirements for PNP silicon, VHF-UHF amplifier transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance (RHA) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

MIL-PRF-19500/427 - Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614Us, 1N5616Us, 1N5618Us, 1N5620Us, 1N5622Us, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.

MIL-PRF-19500/428 - Semiconductor Device, Field-Effect Transistor, N-Channel Silicon, Type 2N4416A And 2N4416Aub, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for N-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for the device type as specified in MIL-PRF-19500. (The JANS level is inactive for new designs.)

MIL-PRF-19500/429 - Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615Us, 1N5617Us, 1N5619Us, 1N5621Us, 1N5623Us, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.

MIL-PRF-19500/430 - Semiconductor Device, Dual Field Effect Transistors, N-Channel, Silicon Types 2N5545, 2N5546, And 2N5547, Jan, Jantx, And Jantxv

This specification covers the performance requirements for two electrically isolated, matched N-channel, junction, silicon field-effect transistors in one package. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/431 - Semiconductor Device, Field Effect Transistors, N-Channel, Silicon, Types 2N4091, 2N4092, 2N4093, 2N4091Ub, 2N4092Ub, And 2N4093Ub Jan, Jantx, And Jantxv

This specification covers the performance requirements for N-channel, junction, silicon field-effect transistors intended for use in chopper and analog gate circuit applications. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/433 - Semiconductor Device, Transistor, Pnp, Silicon, High-Power, Type 2N4399 And 2N5745, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for PNP silicon, high-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/434 - Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor, Type 1N5610 Through 1N5613, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for 1,500 watt, peak, pulse power, silicon, transient, voltage suppressor diodes. Four levels of product assurance are provided for each device as specified in MIL-PRF-19500.

MIL-PRF-19500/435 - Semiconductor Device, Diode, Silicon, Low-Noise Voltage Regulator, Types 1N4099-1 Through 1N4135-1, 1N4614-1 Through 1N4627-1, 1N4099Ur-1 Through 1N4135Ur-1, 1N4614Ur-1 Through 1N4627Ur-1, (Ub, Ub2, Ub2R, Ubca, Ubd, And Ubcc), C And D Tolerance Suffix Devices, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type (die). For JANHC and JANKC quality levels see 6.5.

MIL-PRF-19500/436 - Semiconductor Device, Diode, Silicon, Voltage-Variable Capacitor Types 1N5461B Thru 1N5476B And 1N5461C Thru 1N5476C Jan, Jantx And Jantxv

This specification covers the performance requirements for a silicon, voltage-variable-capacitor diode. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/437 - Semiconductor Device, Diode, Silicon, Low-Noise Voltage Regulator, Types 1N5518B-1, 1N5518C-1, 1N5518D-1 Through 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518Bur-1, 1N5518Cur-1, 1N5518Dur-1 Through 1N5546Bur-1, 1N5546Cur 1, 1N5546Dur-1, Jan, Jantx, Jantxv, Janhc, And Jankc

This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. For JANHC and JANKC quality levels (see 6.5).

MIL-PRF-19500/439 - Semiconductor Device, Transistor, Npn, Silicon, High-Power, Types 2N5038 And 2N5039, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for NPN silicon, high-power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type.

MIL-PRF-19500/441 - Semiconductor Device, Transistor, Pnp, Silicon, Power Types 2N3740, 2N3740U4, 2N3741, And 2N3741U4, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcc, Jankcc, Jankccm, Jankccd, Jankccp, Jankccl, Jankccr, Jankccf, Jankccg, And Jankcch

This specification covers the performance requirements for PNP, silicon, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/443 - Semiconductor Device, Diode, Silicon, Switching Type 1N5719 Jan, Jantx And Jantxv (Refer To Dscc Dwg 01038)

This specification covers the performance requirements for silicon pin diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500 (see 6.3.2).

MIL-PRF-19500/444 - Semiconductor Device, Diode, Silicon, Switching, Schottky, Types 1N5711-1, 1N5711Ur-1, 1N5711Ub, 1N5711Ubca, 1N5711Ubd, 1N5711Ubcc, 1N5712-1, 1N5712Ur-1, 1N5712Ub, 1N5712Ubca, 1N5712Ubd, 1N5712Ubcc, 1N6857-1, 1N6857Ur-1, 1N6858-1, And 1N6858Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

MIL-PRF-19500/445 - Semiconductor Device, Diode, Silicon, Switching Types 1N5712, 1N5712-1 And 1N5712Ur-1, Jan, Jantx, Jantxv, Janj, Jans, Janhc And Jankc (S/S By Mil-Prf-19500/444)

This specification covers the performance requirements for Schottky barrier diodes. Five levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two level of product assurance are provided for each unencapsulated device type.

MIL-PRF-19500/446 - Semiconductor Device, Silicon, High-Power, Single Phase, Full Wave Bridge Rectifier, Types Spa25, Spb25, Spc25, And Spd25 Jan, Jantx, And Jantxv

This specification covers the performance requirements for silicon, single phase, full wave rectifiers. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/448 - Semiconductor Device, Transistor, Pnp, Silicon, Low-Power, Type 2N4405, 2N4405Ua, And 2N4405Ub, Jan And Jantx

This specification covers the performance requirements for PNP, silicon, low-power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/452 - Semiconductor Device, Diode, Silicon, Temperature Compensated, Voltage Reference, Types 1N4565A-1 Through 1N4584A-1, And 1N4565Aur-1 Through 1N4584Aur-1, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc, Radiation Hardened (Total Dose Only) Types Jantxvm, D, L, R, F, G, H; Jansm, D, L, R, F, G, H, Janhcm, D, L, R, F, G, H; And Jankcm, D, L, R, F, G, H

This specification covers the performance requirements for 6.4 volts -�5 percent, silicon, low bias current, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. Seven levels of radiation hardened (total dose only) product assurance are provided for each encapsulated device type, and two levels of product assurance for each unencapsulated device type die as specified in MIL-PRF-19500.

MIL-PRF-19500/453 - Semiconductor Device, Transistor, Npn, Silicon, High-Frequency Type 2N5109 And 2N5109Ub, Jan, Jantx, Jantxv, Jans, Janhc, Jankc Jasm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And Jansh

This specification covers the performance requirements for NPN silicon, VHF-UHF amplifier transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/454 - Semiconductor Device, Transistor, Npn, Silicon, Power Types 2N5660, 2N5660U3, 2N5661, 2N5661U3, 2N5662, And 2N5663, Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/455 - Semiconductor Device, Transistor, Npn, Silicon, Power Switching, Types 2N5664, 2N5665, 2N5666, 2N5666S, 2N5666U3, 2N5667, And 2N5667S, Jan, Jantx, Jantxv, Jantxvr, Jantxvf, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, And Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And Jankch

This specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each un-encapsulated device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS product assurance level. Radiation hardness assurance (RHA) level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

MIL-PRF-19500/456 - Semiconductor Device, Transistor, Npn, Silicon, High-Power Type 2N5302 And 2N5303, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for NPN, silicon, high-power transistors. Four level of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/461 - Semiconductor Device, Transistor, Pnp, Silicon, High-Power Type 2N6211, 2N6212, 2N6213, 2N6213A, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for PNP silicon, high-voltage. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

MIL-PRF-19500/463 - Semiconductor Device, Diode, Silicon, Current Regulator, Types 1N5283-1 Through 1N5314-1, And 1N5283Ur-1 Through 1N5314Ur-1, 1N7048-1 Through 1N7055 1, 1N7048Ur-1 Through 1N7055Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for 100 volt, silicon, current regulator diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

MIL-PRF-19500/464 - Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N5685 And 2N5686, Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/466 - Semiconductor Device, Transistor, Pnp, Silicon, Power, Types 2N5683 And 2N5684, Jan, Jantx, And Jantxv

This specification covers the performance requirements for PNP, silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/467 - Semiconductor Device, Diode, Light Emitting Types In5765 Jan And Tx

This specification covers the performance requirements for hermetically-sealed, red light emitting diodes. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/469 - Semiconductor Device, Silicon, 69E, High-Power, Single Phase, Full Wave Bridge Rectifier, Types M19500/469-01, -02, -03, -04, -05, Jantx And Jantxv

This specification covers the performance requirements for silicon, single phase, full wave bridge rectifiers, intended for use in applications at frequencies of 1 kHz or less. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/472 - Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6350, 2N6351, 2N6352, And 2N6353, Jan, Jantx, Jantxv, Janhc, And Jankc

This specification covers the performance requirements for NPN silicon power Darlington, transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500.

MIL-PRF-19500/474 - Semiconductor Device, Silicon, Multiple Diode Arrays, Types 1N5768, 1N5770, 1N5772, 1N5774, 1N6100, 1N6101, 1N6496, 1N6506, 1N6507, 1N6508, 1N6509, 1N6510, And 1N6511 Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for silicon, multiple diode arrays. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/476 - Semiconductor Device, Field Effect Transistors, P-Channel, Silicon, Types 2N5114 Through 2N5116 And 2N5114Ub Through 2N5116Ub, Jan, Jantx, And Jantxv

This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/477 - Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, Types 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, And 1N5811, 1N5802Us, 1N5804Us, 1N5806Us, 1N5807Us, 1N5809Us, And 1N5811Us, 1N5802Urs, 1N5804Urs, 1N5806Urs, 1N5807Urs, 1N5809Urs, And 1N5811Urs, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

MIL-PRF-19500/478 - Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N5812, 1N5814, 1N5816, And R Versions, Jan, Jantx, Jantxv, Janhc, Jankc, And Jans

This specification covers the performance requirements for silicon, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two product assurance levels are provided for die.

MIL-PRF-19500/483 - Semiconductor Device, Silicon, High-Power, Three Phase, Full Wave Bridge Rectifier, Types M19500/483-01 Through M19500/483-04, Jantx

This specification covers the performance requirements for silicon, 3-phase, full wave bridge rectifiers intended for use in applications at frequencies of 1 kHz or less. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/485 - Semiconductor Device, Transistor, Pnp, Silicon, Low-Power Types: 2N5415, 2N5415S, 2N5415Ua, 2N5415U4, 2N5416, 2N5416S, 2N5416Ua, And 2N5416U4, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Janhcd, Jankcb, Jankcd, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And Jankcbh

This specification covers the performance requirements for PNP, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/488 - Semiconductor Device, Transistor, Npn, Silicon, High-Power, Types 2N5671 And 2N5672, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for NPN, silicon, high-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/495 - Semiconductor Device, Unitized, Dual-Transistor, Npn, Silicon Types 2N5793, 2N5794, And 2N5793A, 2N5794A, 2N5794U, 2N5794Uc, 2N5794Au, 2N5794Auc, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And Jansh

Scope. This specification covers the performance requirements for unitized, dual transistors which contains a pair of electrically isolated matched and unmatched NPN, silicon transistors in one package. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/496 - Semiconductor Device, Dual Transistor, Pnp, Silicon Unitized, Types 2N5795, 2N5796, 2N5796U, 2N5796Uc, 2N5795A, 2N5796A, 2N5796Au, And 2N5796Auc, Jan, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Jantx, And Jantxv

This specification covers the performance requirements for two electrically isolated, unmatched PNP silicon transistors as one dual unit for HI-speed saturated switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to two radiation levels is provided for JANTXV and JANS product assurance levels. RHA level designators -�M-�, -�D-�, -�P-�, -�L-�, -�R-�, -�F-�, -�G-� and -�H-� are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/498 - Semiconductor Device, Translator, Npn, Silicon, Power Types 2N6306, 2N6306T1, 2N6306T3, 2N6308, 2N6308T1, 2N6308T3, Jan, Jantx And Jantxv

This specification covers the performance requirements for NPN silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/500 - Semiconductor Device, Diode, Silicon, Unipolar Transient Voltage Suppressor, Types 1N5555 Through 1N5558, 1N5907, 1N5629A Through 1N5665A, Jan, Jantx, And Jantxv

This specification covers the performance requirements for 1,500 watt, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/501 - Semiconductor Device, Darlington Transistor, Pnp, Silicon, Power, Types 2N6051, And 2N6052, Jan, Jantx, And Jantxv

This specification covers the performance requirements for PNP, Darlington, silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/502 - Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6058 And 2N6059, Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN silicon power Darlington transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/503 - Semiconductor Device, Diode, Silicon, Power Rectifier, Ultra Fast Recovery, Types 1N6073 Through 1N6081, Jan, Jantx, Jantxv, And Janhc

This specification covers the performance requirements for three separate series of silicon, ultra fast recovery semiconductor diodes for use as power rectifiers. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. One level of product assurance are provided for each unencapsulated device type.

MIL-PRF-19500/504 - Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6283 And 2N6284, Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN silicon power Darlington transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-�PRF-�19500.

MIL-PRF-19500/505 - Semiconductor Device, Darlington Transistor, Pnp, Silicon, Power, Types 2N6286 And 2N6287, Jan, Jantx, And Jantxv

This specification covers the performance requirements for PNP, Darlington, power transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

MIL-PRF-19500/507 - Semiconductor Device, Diode, Silicon, Bipolar Transient Voltage Suppressor, Types 1N6036A Through 1N6072A Jan, Jantx, And Jantxv

This specification covers the performance requirements for 1500 watt, bi-directional, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device as specified in MIL-PRF-19500.

MIL-PRF-19500/508 - Semiconductor Device, Transistor, Pnp, Silicon, Power, Types 2N6437 And 2N6438, Jan, Jantx And Jantxv

This specification covers the performance requirements for PNP, silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/509 - Semiconductor Device, Transistor, Npn, Silicon, Power Types 2N6338 And 2N6341 Jan, Jantx, Jantxv, And Jans

MIL-PRF-19500/510 - Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N6249, 2N6249T1, 2N6249T3, 2N6250, 2N6250T1, 2N6250T3, 2N6251, 2N6251T1, 2N6251T3, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Jankcb, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And Jankcbh

This specification covers the performance requirements for NPN silicon, power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/511 - Semiconductor Device, Transistor, Pnp, Silicon, Switching Type 2N4261, 2N4261Ub, 2N4261Ubc, 2N4261Ubn, And 2N4261Ubcn Jan, Jantx, Jantxv And Jans, Janhc And Jankc, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankcm, Jankcd, ...

This specification covers the performance requirements for PNP silicon, switching transistors. Four levels of product assurance are provided for each encapsulated device type. Two levels for unencapsulated die as specified in MIL-PRF-19500. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

MIL-PRF-19500/512 - Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types 2N4029, 2N4033, 2N4033Ua, 2N4033Ub, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Jankc2N4033, And Janhc2N4033

This specification covers the performance requirements for PNP silicon transistors designed for use in high speed switching and driver applications. Four levels of product assurance are provided for each encapsulated device type and two levels of product assurance for each unencapsulated specified as in MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS product assurance levels. RHA level designators -�M-�, -�D-�, -�P-�, -�L-�, -�R-�, -�F-�, -�G-�, and -�H-� are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/514 - Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N6274 And 2N6277, Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN silicon, power transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

MIL-PRF-19500/515 - Semiconductor Device, Transistor, Pnp, Silicon, Power, Types 2N6378 And 2N6379, Jan, Jantx, Jantxv, And Janhc

This specification covers the performance requirements for PNP silicon, power transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and one level of product assurance for each unencapsulated device type.

MIL-PRF-19500/516 - Semiconductor Device, Diode Silicon, Bipolar Transient Voltage Suppressor, Types 1N6102 Through 1N6137, 1N6102A Through 1N6137A, 1N6138 Through 1N6173, 1N6138A Through 1N6173A, 1N6102Us Through 1N6137Us, 1N6102Aus Through 1N6137Aus, 1N6138Us Through 1N6173Us, 1N6138Aus Through 1N6173Aus, 1N6102Urs Through 1N6137Urs, 1N6102Aurs Through 1N6137Aurs, 1N6138Urs Through 1N617...

This specification covers the performance requirements for bipolar 500 watt and 1,500 watt peak pulse power transient voltage suppressor diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. The suffix "A" denotes a five percent voltage tolerance.

MIL-PRF-19500/518 - Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N3766, 2N3767, Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/522 - Semiconductor Device, Transistor, Npn, Silicon, High-Frequency Types 2N6603 And 2N6604 Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN, silicon, microwave transistors. Three levels of product assurance are provided for the device type as specified in MIL-PRF-19500.

MIL-PRF-19500/523 - Semiconductor Device, Transistor, Npn, Silicon, Power Darlington Types 2N6383, 2N6384, 2N6385, Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN silicon, power Darlington transistors. Three levels of product assurance are provided for each device type as specified in MIL-�PRF-�19500.

MIL-PRF-19500/525 - Semiconductor Device, Transistor, Npn, Silicon, Power Types 2N6546, 2N6546T1, 2N6546T3, 2N6547, 2N6547T1, And 2N6547T3 Jan, Jantx, Jantxv6 And Janhc

This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/526 - Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N3879, Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/527 - Semiconductor Device, Darlington Transistor, Pnp, Silicon, Power, Types 2N6648, 2N6649, And 2N6650 Jan, Jantx, And Jantxv

This specification covers the performance requirements for PNP silicon, darlington power transistor. Three levels of product assurance are provided as specified in MIL-PRF-19500.

MIL-PRF-19500/528 - Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N6032 And 2N6033 Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/533 - Semiconductor Device, Diode, Silicon, Voltage Regulator, Types 1N6309 Through 1N6355; 1N6309Us Through 1N6355Us, 1N6309Ub Through 1N6355Ub, 1N6309Ub2 Through 1N6355Ub2 1N6309Ubca Through 1N6355Ubca, 1N6309Ub2R Through 1N6355Ub2R 1N6309Ubcc Through 1N6355Ubcc, 1N6309Ubd Through 1N6355Ubd Plus C And D Tolerance Suffix, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for microminiature 500 mW, silicon, metallurgically bonded, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent (C), and 1 percent (D). Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

MIL-PRF-19500/534 - Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N5002 And 2N5004, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Jankcb, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And Jankcbh

This specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance for each unencapsulated device type die. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/535 - Semiconductor Device, Transistor, Pnp, Silicon, Power, Types 2N5003 And 2N5005, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for PNP, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for unencapsulated die.

MIL-PRF-19500/538 - Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2N6691, And 2N6693, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Jankca, Jankcam, Jankcad, Jankcap, Jankcal, Jankcar, Jankcaf, Jankcag, And Jankcah

This specification covers the performance requirements for NPN silicon, power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/539 - Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6300 And 2N6301, Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN silicon, power Darlington transistors. Three levels of product assurance are provided for each device type as specified in MIL-�PRF-�19500.

MIL-PRF-19500/540 - Semiconductor Device, Darlington Transistor, Pnp Silicon, Power, Types 2N6298 And 2N6299, Jan, Jantx, And Jantxv

This specification covers the performance requirements for PNP, Darlington, silicon, power transistors. Three levels of product assurance is provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/542 - Semiconductor Device, Transistor, Field Effect, N-Channel, Silicon, Types 2N6756, 2N6758, 2N6760, 2N6762, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type.

MIL-PRF-19500/543 - Semiconductor Device, Field Effect Transistors, N-Channel, Silicon Avalanche, Types 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, And 2N6770T1, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance for each unencapsulated die, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR).

MIL-PRF-19500/544 - Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N5152, 2N5154, 2N5152L, 2N5154L, 2N5152U3, 2N5154U3, Jan, Jantx, Jantxv, Jantxvf, Jantxvr, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Janhcd, Janhce, Jankcb, Jankcbf, Jankcd, Jankce, Jankcdm, Jankcdd, Jankcdp, Jankcdl, Jankcdr, Jankcdf, Jankcdg, And Jankcdh

This specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type and two levels of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/545 - Semiconductor Device, Transistor, Pnp, Silicon, Power, Types 2N5151, 2N5153, 2N5151L, 2N5153L, 2N5151U3, And 2N5153U3, Jan, Jantx, Jantxv, Jantxvf, Jantxvr, Jans, Janhc, And Jankc, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Janhcc, Janhcd, Jankcb, Jankcc, Jankcd, Jankccm, Jankccd, Jankccp, Jankccl, Jankccr, Jankccf, Jankccg, And Jankcch

This specification covers the performance requirements for PNP, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/547 - Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6660 And 2N6661, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level, high frequency, high switching speed MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

MIL-PRF-19500/550 - Semiconductor Device, Diode, Silicon, Fast-Recovery, High Current, Types 1N6304, 1N6305, 1N6306, And R Types, Jan, Jantx, Jantxv, Janhc, And Jankc

This specification covers the performance requirements for silicon, high efficiency, fast recovery, switching power rectifier diodes. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

MIL-PRF-19500/551 - Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor Types 1N6461 Through 1N6468, 1N6461Us Through 1N6468Us, And 1N6461Urs Through 1N6468Urs, Jan, Jantx, And Jantxv

This specification covers the performance requirements for 500-watt peak pulse, power, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/552 - Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor, Types 1N6469 Through 1N6476, 1N6469Us Through 1N6476Us, 1N6469Urs Through 1N6476Urs, Jan, Jantx, And Jantxv

This specification covers the performance requirements for 1,500-watt silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/553 - Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6391, Jan, Jantx, Jantxv, Jans, And Janhc

This specification covers the performance requirements for a silicon, fast recovery, schottky barrier diode, intended for use as a power rectifier in rectifier recovery circuits, or as a flyback diode in power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-�PRF-�19500. One level of product assurance is provided for each unencapsulated device type (die) as specified in MIL-�PRF-�19500.

MIL-PRF-19500/554 - Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6392, Jan, Jantx, Jantxv, And Janhc

This specification covers the performance requirements for a silicon, fast recovery, Schottky barrier semiconductor diode. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for each unencapsulated device type.

MIL-PRF-19500/555 - Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6788, 2N6788U, 2N6790, 2N6790U, 2N6792, 2N6792U, 2N6794, And 2N6794U, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

MIL-PRF-19500/556 - Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, And 2N6786U, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

MIL-PRF-19500/557 - Semiconductor Device, Field Effect Transistor, N-Channel, Silicon Types 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, And 2N6802U Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

MIL-PRF-19500/558 - Semiconductor Device, Unitized, Pnp, Silicon, Switching, Four Transistor Array, Types 2N6987, 2N6987U, And 2N6988, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And Jansh

This specification covers the performance requirements for PNP, silicon, switching transistors, four independent chip array. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Radiation hardness assurance (RHA) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

MIL-PRF-19500/559 - Semiconductor Device, Unitized, Npn, Silicon, Switching, Four Transistor Array, Types 2N6989, 2N6989U, And 2N6990, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And Jansh

This specification covers the performance requirements for NPN, silicon, switching transistors in a four independent chip array. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/560 - Semiconductor Device, Transistor, Npn, Silicon, Switching, Type 2N5339 And 2N5339U3, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcc, Jankcc, Jankccm, Jankccd, Jankccp, Jankccl, Jankccr, Jankccf, Jankccg, And Jankcch

This specification covers the performance requirements for NPN silicon switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/561 - Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types 2N6193 And 2N6193U3, Jan, Jantx, Jantxv, Jans, Janhc, Jankc, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And Jankch

This specification covers the performance requirements for PNP silicon switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500. Radiation hardness assurance (RHA) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

MIL-PRF-19500/562 - Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6804 And 2N6806 Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type.

MIL-PRF-19500/563 - Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6845, 2N6845U, 2N6847, And 2N6847U, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

MIL-PRF-19500/564 - Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6849, 2N6849U, 2N6851 And 2N6851U, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

MIL-PRF-19500/565 - Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6895, 2N6896, 2N6897, And 2N6898, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for P-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

MIL-PRF-19500/566 - Semiconductor Device, Transistor, Field Effect, N-Channel, Silicon, Logic Level, Types 2N6902, And 2N6904 Jan, Jantx, Jantxv And Jans

This specification covers the performance requirements for logic level, N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

MIL-PRF-19500/567 - Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6492, 1N6492U4, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for silicon, fast recovery, Schottky barrier, semiconductor diode. Four levels of product assurance are provided for each device type as specified in

MIL-PRF-19500/570 - Semiconductor Device, Transistor, Field Effect, N-Channel, Silicon Logic-Level, Types 2N6901 And 2N6903, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for a logic-level N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are also provided for each unencapsulated device type. See 6.4 or JANHC and JANKC die versions.

MIL-PRF-19500/573 - Semiconductor Device, Transistor, Pnp, Silicon, Switching Types 2N4209, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And Jankch

This specification covers the performance requirements for PNP silicon high-speed logic switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

MIL-PRF-19500/580 - Semiconductor Device, Transistor, Pnp, Silicon Amplifier, Types 2N4234, 2N4235, And 2N4236, Jan, Jantx, And Jantxv

This specification covers the performance requirements for PNP, silicon, amplifier transistor. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/581 - Semiconductor Device, Transistor, Npn, Silicon Amplifier, Types 2N4237, 2N4238, And 2N4239, Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN, silicon, amplifier transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/582 - Semiconductor Device, Transistor, Pnp, Silicon Amplifier, Types 2N5679 And 2N5680, Jan, Jantx And Jantxv

This specification covers the performance requirements for PNP, silicon, amplifier transistor. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/583 - Semiconductor Device, Transistor, Npn, Silicon Amplifier, Types 2N5681 And 2N5682, Jan, Jantx, And Jantxv

This specification covers the performance requirements for NPN , silicon, amplifier transistor. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/585 - Semiconductor Device, Diode, Silicon, Ultra-Fast Recovery, Power Rectifier, 1N6620 Through 1N6625, 1N6620U Through 1N6625U, 1N6620Us Through 1N6625Us, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for a silicon, ultra-fast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/586 - Semiconductor Device, Diode, Silicon, Schottky Barrier, Types 1N5817-1, 1N5817Ur-1, 1N5819-1, 1N5819Ur-1, 1N6761-1, And 1N6761Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance are provided for unencapsulated devices (die) as specified in MIL-PRF-19500.

MIL-PRF-19500/587 - Semiconductor Device, Diode, Silicon, Rectifier, Types 1N6661, 1N6662, 1N6663, 1N6661Us, 1N6662Us, And 1N6663Us, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for silicon diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/588 - Semiconductor Device ,Transistor, Insulated Gate, Bipolar, N-Channel, Silicon Type 2N7364 Jan, Jantx, Jantxv And Jans

This specification covers the performance requirements for insulated gate, bipolar power transistors.

MIL-PRF-19500/589 - Semiconductor Device, Transistor, Insulated Gate, Bipolar N-Channel, Silicon Types 2N7367 And 2N7368, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for an insulated gate bipolar power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/590 - Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, 1N6626 Through 1N6631, 1N6626U Through 1N6631U, 1N6626Us Through 1N6631Us, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for a silicon, ultrafast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as specified in

MIL-PRF-19500/592 - Semiconductor Device, Repetitive Avalanche, Field Effect Transistor, N-Channel, Silicon Types 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, And 2N7228U, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR).

MIL-PRF-19500/594 - Semiconductor Device, Diode, Silicon, Power Rectifier, Ultra Fast Recovery, Low Leakage, Types 1N6664 Through 1N6666, And 1N6664R Through 1N6666R Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for a silicon, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/595 - Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, P-Channel, Silicon, Types 2N7236, 2N7237, 2N7236U, And 2N7237U, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR).

MIL-PRF-19500/596 - Semiconductor Device, Repetitive Avalanche, Field Effect, Transistor, N-Channel, Silicon, Types 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, And 2N7222U, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for a N-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum ratings (EAR and EAS) and maximum avalanche current IAR. Two levels of product assurance are provided for die (element evaluation).

MIL-PRF-19500/597 - Semiconductor Device, Transistors, Quad, Field Effect, N-Channel, Silicon, Type 2N7334, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR). Four levels of product assurance are provided for each hermetic encapsulated device type as specified in MIL?vPRF?v19500. Two levels of product assurance are provided for each unencapsulated device type (die) as specified in MIL?vPRF?v19500.

MIL-PRF-19500/598 - Semiconductor Device, Transistors, Quad, Field Effect, P-Channel And N-Channel, Silicon, Type 2N7336, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for quad N-channel and P-channel, enhancement- mode, MOSFET, power transistor, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR). Four levels of product assurance are provided for each device type as specified in MIL?vPRF?v19500.

MIL-PRF-19500/599 - Semiconductor Device, Transistors, Quad, Field Effect, P-Channel, Silicon, Type 2N7335, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR). Four levels of product assurance are provided for each encapsulated device type as specified in MIL?vPRF?v19500. Two levels of product assurance for each unencapsulated device type die (element evaluation) as specified in MIL?vPRF?v19500.

MIL-PRF-19500/6 - Semiconductor, Device Transistor, Pnp, Germanium, Low Power Types 2N43Az1, 2N43Az2, 2N44Az1 And 2N44Az2

This specification covers the performance requirements for PNP, germanium, low-power transistor.

MIL-PRF-19500/600 - Semiconductor Device, Field Effect Transistor, N-Channel, Silicon Types 2N7229 And 2N7230 Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications.

MIL-PRF-19500/601 - Semiconductor Device, Field Effect Power Transistors, N-Channel, Silicon, Types 2N7261 And 2N7262 U And U5 Suffixes, Jantxv, And Radiation Hardened Type Suffixes, Jantxvr, F, G, And H And Jansr, F, G, And H

This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened and non-hardened, power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.

MIL-PRF-19500/602 - Semiconductor Device, Field Effect Radiation Hardened (Total Dose Only) Transistors, N-Channel, Silicon Types 2N7265, 2N7266, And 2N7267 Jantxvm, D, R, F, G, And H And Jansm, D, R, F, G, And H

This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, Radiation Hardened (total dose only), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500, with Avalanche Energy Maximum rating (EAS) and Maximum Avalanche Current (IAS).

MIL-PRF-19500/603 - Semiconductor Device, Field Effect Radiation Hardened (Total Dose Only) Transistors, N-Channel, Silicon, Types 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, And 2N7394U, Jantxvr, F, G, H; Jansr, F, G, And H

This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.

MIL-PRF-19500/604 - Semiconductor Device, Field Effect Radiation Hardened (Total Dose Characterization Only) Transistors, N-Channel, Silicon, Types 2N7272, 2N7275, 2N7278, And 2N7281, Jantxvm, D, And R, And Jansm, D, And R

This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose characterization only), power transistor. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

MIL-PRF-19500/605 - Semiconductor Device, Field Effect Radiation Hardened (Total Dose Only) Transistors, N-Channel, Silicon, Types 2N7292, 2N7294, 2N7296, And 2N7298, Jantxvm, D, R, H And Jansm, D And R

This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

MIL-PRF-19500/606 - Semiconductor Device, Field Effect Radiation Hardened (Total Dose Only) Transistors, N-Channel, Silicon, Types 2N7291, 2N7293, 2N7295, And 2N7297, Jantxvm, D, And R, And Jansm, D, And R

This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

MIL-PRF-19500/607 - Semiconductor Device, Field Effect Transistors, N-Channel And P-Channel, Silicon, Type 2N7337 Jan, Jantx, Jantxv, Jans, And Janhc

This specification covers the performance requirements for N-channel, and P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR). One level of product assurance is provided for unencapsulated device.

MIL-PRF-19500/608 - Semiconductor Device, Diode, Silicon, Schottky, Power Rectifier,Common Cathode, Common Anode Center Tap, Doubler, Types 1N6660, 1N6660Cct1, 1N6660R, 1N6660Cat1, And 1N6660Dt1, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for a silicon, schottky, power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/609 - Semiconductor Device, Diode, Silicon, Switching, Types 1N6639, 1N6640, 1N6641, 1N6639Us, 1N6640Us, And 1N6641Us Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for controlled forward voltage switching diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/610 - Semiconductor Device, Hermetic, Diode, Silicon, Schottky Barrier, Types 1N6677-1 And 1N6677Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

MIL-PRF-19500/611 - Semiconductor Device, Transistor, Npn, Silicon, Power Switching Types 2N7374, 2N7375, 2N7376, And 2N7377, Jantx, Jantxv, And Jans

This specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power switching applications. Three levels of product assurance are provided as specified in MIL-PRF-19500.

MIL-PRF-19500/612 - Semiconductor Device, Transistor, Pnp, Silicon, Power, Type 2N7372, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for PNP, silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided as specified in MIL-PRF-19500.

MIL-PRF-19500/613 - Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N7373, Jan, Jantx, Jantxv, Jans And Jansm, D, P, L, R, F, G, And H

This specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided as specified in MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS product assurance level. RHA level designators M, D, P, L, R, F, G, and H are appended to the device prefix to identify devices, which have passed RHA requirements.

MIL-PRF-19500/614 - Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon, Types 2N7380 And 2N7381, Jantxv, M, D, R, F, G, And H And Jans, M, D, R, F, G, And H

This specification covers the performance requirements for an N-channel, radiation hardened, enhancement mode, MOSFET, power transistors intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.

MIL-PRF-19500/615 - Semiconductor Device, Filed Effect Radiation Hardened Transistors, P-Channel, Silicon, Types 2N7382 And 2N7383, Jantxv M, D, R, And F And Jans M, D, R, And F

This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.

MIL-PRF-19500/616 - Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode Or Anode Center Tap, Ultrafast, Types 1N6657 Through 1N6659 And 1N6657R Through 1N6659R, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for a silicon, dual high voltage, ultrafast power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/617 - Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode Or Anode Center Tap, Ultrafast, Types 1N6672 Through 1N6674 And 1N6672R Through 1N6674R, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for a silicon, dual high voltage, ultra-fast power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL PRF-19500.

MIL-PRF-19500/619 - Semiconductor Device, Diode, Schottky Power Rectifiers, Types 1N6849 - 1N6856, 1N6849U1 - 1N6856U1, 1N6849U2 - 1N6856U2, And 1N6849U3 - 1N6856U3 Jan, Jantx And Jantxv

This specification covers the performance requirements for schottky power surface mount rectifiers. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/620 - Semiconductor Device, Hermetic, Diode, Silicon, Rectifier, Schottky Barrier, Types 1N5822, 1N5822Us, 1N6864, 1N6864Us, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for silicon, Schottky barrier rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, and two levels of product assurance for die (element evaluation).

MIL-PRF-19500/621 - Semiconductor Device, Transistor, Pnp, Silicon, High-Power, Type 2N7369, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for PNP silicon, high-power transistor. Four levels of product assurance are provided as specified in MIL-PRF-19500.

MIL-PRF-19500/622 - Semiconductor Device, Transistor, Npn, Silicon, High-Power Type 2N7368 Jan, Jantx, Jantxv,And Jans

This specification covers the performance requirements for NPN silicon, high-power transistor. Four levels of product assurance are provided as specified in MIL-PRF-19500.

MIL-PRF-19500/623 - Semiconductor Device, Darlington Transistor, Pnp, Silicon, High-Power Type 2N7371 Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for PNP silicon, high-power Darlington transistor. Four levels of product assurance are provided as specified in MIL-PRF-19500.

MIL-PRF-19500/624 - Semiconductor Device, Transistor, Npn, Silicon, Power Darlington Type 2N7370, Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for NPN silicon, high power Darlington transistors. Four levels of product assurance are provided for each device type as specified in MIL-�PRF-�19500.

MIL-PRF-19500/625 - Semiconductor, Device, Diode, Silicon, Switching Types 1N6683, 1N6684, 1N6685, In6683Us, 1N6684Us, And 1N6685Us Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for switching diodes, suitable for high stress environments where silver button construction may be inadequate (see 6.3).

MIL-PRF-19500/626 - Semiconductor Device, Diode, Silicon, Power Rectifier, Ultrafast, Types 1N6686, 1N6687, 1N6686Us, And 1N6687Us, Jantx, Jantxv, And Jans

This specification covers the performance requirements for silicon, hyper fast power rectifier diodes.

MIL-PRF-19500/627 - Semiconductor Device, Diode, Silicon, Ultra-Fast Recovery, Power Rectifier, 1N6688, 1N6689, 1N6688Us, 1N6689Us Jantx, Jantxv, And Jans

This specification covers the performance requirements for a silicon, ultra-fast recovery, semiconductor power rectifier diode. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/628 - Semiconductor Device, Diode, Silicon, Ultra-Fast Recovery, Power Rectifier, 1N6690 Through 1N6693, 1N6690Us Through 1N6693Us Jan, Jantx, Jantxv, And Jans

This specification covers the performance requirements for a silicon, ultra-fast recovery, semiconductor power rectifier diode. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

MIL-PRF-19500/629 - Semiconductor Device, Hermetic, Diode, Silicon, Rectifier, Schottky Barrier, Types 1N6702 And 1N6702Us, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc

This specification covers the performance requirements for silicon, Schottky barrier rectifier diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated die (element evaluation).

MIL-S-0019500/381 - Semiconductor Device, Transistor, Pnp, Silicon, Jan, Jan Tx And Jan Txv Types 2N2034, 2N2859, 2N2911

MIL-S-19500/1 - Semiconductor Device, Transistor, Pnp, Germanium, Low Power Type 2N220

This specification covers the detail requirements for a low-power, PNP, germanium transistor.

MIL-S-19500/100 - Semiconductor Devices Transistor, Pnp, Germanium, Type 2N537

This specification covers the detail requirements for a germanium, PNP, transistor for use in large signal RF oscillator and amplifier applications, and having the following particular characteristics at TC = + 25 Degree + 3 Degree C.

MIL-S-19500/104 - Semiconductor Device, Diode, Silicon, Power Rectifier Types 1N1124A, 1N1126A, 1N1128A, 1N3649, 1N3650 1N1124Ra, 1N1126Ra, 1N1128Ra, 1N3649R, And 1N3650R (S/S By Mil-Prf-19500/260)

This specification covers the detail requirements for 1 amp, silicon, power rectifiers with the following ratings.

MIL-S-19500/11 - Semiconductor Device, Transistor, Npn, Germanium, Switching Type 2N167A

This specification covers the detail requirements for a NPN, germanium, low-power switching transistor.

MIL-S-19500/110 - Semiconductor Device, Transistor, Pnp, Silicon, Low-Power Types 2N328A, 2N329A, 2N328As, And 2N329As

This specification covers the detail requirements for a PNP, silicon, low power transistor.

MIL-S-19500/112 - Semiconductor Device, Transistor, Pnp, Germanium, Types 2N502A And 2N52B

This specification covers the detail requirements for germanium, PNP, transistors for particular use as 200-MHz amplifier devices having a minimum power gain of 10 db, in compatible equipment circuits.

MIL-S-19500/119 - Semiconductor Device, Diode, Germanium, Type Jan-1N933

This specification covers the detail requirements for a germanium electrically pulse formed junction (point contact) semiconductor diode with a controlled conductance.

MIL-S-19500/120 - Semiconductor Device, Transistor, Npn, Silicon, Switching, Low-Power Type 2N706

This specification covers the detail requirements for NPN, silicon, switching, low-power transistor.

MIL-S-19500/121 - Semiconductor Device, Diode, Type In696 (Navy) (S/S By Mil-Prf-19500/116)

MIL-S-19500/122 - Semiconductor Device, Transistor, Pnp, Germanium, High-Power Type 2N1358

This specification covers the detail requirements for a high-power, PNP, germanium transistor.

MIL-S-19500/123 - Semiconductor Device, Transistor, Pnp, Germanium, Vhf 2N700A

This specification covers the detail, requirements for a germanium, PNP, transistor for use as amplifier device(s) in small-signal, VHF, equipment circuits. (See 6.2 herein.)

MIL-S-19500/125 - Semiconductor Device, Transistor, Pnp, Germanium, Switching Type 2N1500

This specification covers the detail requirements for a high-speed switching, PNP, germanium transistor.

MIL-S-19500/126 - Semiconductor Device, Transistor, Npn, Types 2N1302, 2N1304,2N1306, 21308 And Pnp Types 2N1303, 2N1305, 2N1307 And 2N1309

This specification covers the detail requirements for NPN and PNP, complementary germanium, high-frequency transistors.

MIL-S-19500/128 - Semiconductor Device, Diode, Silicon, Mixer Types Jan-1N26B, Jan-1N26Br, Jan-1N26Bm, And Jan-1N26Bmr (S/S By Dscc Dwg 99008)

This specification covers the detail requirements for silicon semiconductor diodes, types: 1N26B (forward polarity); 2N26BR (reverse polarity); 2N26BM (matched forward pair); and 1N26BMR (matched forward and reverse).

MIL-S-19500/129 - Semiconductor Device, Diode Silicon Crystal, Type In78B (S/S By Mil-S-19500/130)

MIL-S-19500/13 - Semiconductor Device, Transistor, Pnp, Germanium, High Power Type 2N174A

This specification covers the detail requirements for a high-power, PNP germanium transistor and is in accordance with MIL-S-19500 except as otherwise specified herein.

MIL-S-19500/130 - Semiconductor Device, Diode, Silicon, Mixer Types 1N78C, 1N78Cr, 1N78Cm, 1N78Cmr, 1N78F, 1N78Fr, 1N78Fm, And 1N78Fmr

This specification covers the detail requirements for silicon point contact semiconductor diodes for use as a mixer in Ku-band equipment.

MIL-S-19500/133 - Semiconductor Device, Transistor, Pnp, Germanium Type 2N1411

This specification covers the detail requirements for germanium, PNP, transistors for use particularily as high-speed switching devices in compatible electronic-equipment circuits.

MIL-S-19500/134 - Semiconductor Device, Diode, Silicon, Power Rectifier Types 1N249B, 1N250B, 1N1198A, 1N2135A, 1N249Rb, 1N250Rb, 1N1198Ra, 1N2135Ra (Use Mil-S-19500/297) (Notice 2)

MIL-S-19500/135 - Semiconductor Device, Transistor, Pnp, Germanium Type 2N695

This specification covers the detail requirements for a germanium PNP transistor and is in accordance with MIL-S-19500, except as otherwise specified herein.

MIL-S-19500/136 - Semiconductor Device, Transistor, Npn, Germanium, Low Power Type 2N1310

This specification covers the detail requirements for a low-power, NPN, germanium transistor and is in accordance with MIL-S-19500, except as otherwise specified herein.

MIL-S-19500/137 - Semiconductor Device, Transistor, Pnp, Germanium Power Types 2N1042 Through 2N1045

This specification covers the detail requirements for PNP, germanium, power, transistors.

MIL-S-19500/138 - Semiconductor Device, Transistor, Pnp, Silicon, Low-Power Type 2N1118

This specification covers the detail requirements for a PNP, silicon, low-power transistor used in chopper, audio, and RF amplifier circuitry.

MIL-S-19500/139 - Semiconductor Device, Transistor, Pnp, Silicon, Type Jan-2N1119

This specification covers the detail requirements for silicon, PNP transistors for use in chopper & high-speed-switching circuitry.

MIL-S-19500/141 - Semiconductor Device, Diode, Silicon, Switching Type 1N697

This specification covers the detail requirements for a silicon diode for use in switching circuitry.

MIL-S-19500/142 - Semiconductor Devices, Silicon, High Voltage Rectifier Types 1N1731A, 1N1733A, And 1N1734A

This specification covers the detail requirements for silicon, semiconductor diodes for use in high-voltage rectifier circuits.

MIL-S-19500/143 - Semiconductor Device, Transistor, Pnp, Germanium Types 2N1183, 2N1183A, 2N1183B And 2N1184, 2N1184A, 2N1184B

This specification covers the detail requirements for germanium, PNP, transistors for use in medium-power circuit applications.

MIL-S-19500/145 - Semiconductor Device, 1 Watt Silicon Regulator Diodes In1425 Thru In1433, In1484, In1485 And In1744 (Use Mil-S-19500/115)

MIL-S-19500/146 - Semiconductor Device, 1 Watt Diode Rectifier, Type In1415 (Use Mil-S-19500/286)

MIL-S-19500/147 - Semiconductor Device, 10 Watt Silicon Regulator Diodes In1416 Thru In1424, In1482, 1N1483 And In1743 (Use Mil-S-19500/124 And Mil-S-19500/272)

MIL-S-19500/148 - Semiconductor Device, 12 Watt Diode, Rectifier, Type In1414 (Use Mil-S-19500/260)

MIL-S-19500/149 - Semiconductor Device, 0.4 Watt Diodes, Rectifier Types In673 And In947 (Use Mil-S-19500/240)

MIL-S-19500/150 - Semiconductor Device, 0.4 Watt Silicon Regulator Diodes In664 Thru In672, In674, In675 And In701 (Use Mil-S-19500/127 And Mil-S-19500/117)

MIL-S-19500/152 - Semiconductor Device, Transistor, Pnp, Germanium Types 2N559 And Tx2N559

MIL-S-19500/153 - Semiconductor Device, Transistor, Npn, Silicon Types 2N702, And 2N703

MIL-S-19500/154 - Semiconductor Device, Transistor, Npn, Silicon, Oscillator Amplifier, Type 2N716

MIL-S-19500/155 - Semiconductor Device, Diode, Silicon, Power Rectifier, General Purpose Types 1N3189, 1N3190, 1N3191, Tx And Non-Tx Types

This specification covers the detail requirements for silicon, general purpose semiconductor diodes for use as power rectifiers in equipment circuits and is in accordance with MIL-S-19500, except as otherwise specified herein. The prefix "TX" is used on devices which have been submitted to and have passed the special process-conditioning, testing, and screening as specified in 4.4 through 4.4.5.3.

MIL-S-19500/16 - Semiconductor Device, Transistor, Npn, Silicon Types 2N342, 2N342A And 2N343

This specification covers the detail requirements for medium-power, audio-range, silicon, NPN transistors and is in accordance with Specification MIL-S-19500 except as otherwise specified herein.

MIL-S-19500/161 - Semiconductor Device, Transistor, Pnp, Germanium, Type 2N1094

MIL-S-19500/163 - Semiconductor Device, Transistor, Npn, Silicon Type 2N1072

This specification covers the detail requirements for diffused silicon, NPN, junction transistors with the following salient characteristics at an ambient temperature of (25 plus/minus 3) deg. C.

MIL-S-19500/165 - Semiconductor Device, Transistor, Pnp, Silicon Type 2N1197

MIL-S-19500/166 - Semiconductor Device, Transistor, Type 2N599

This specification covers the detailed requirements for a PNP germanium transistor and is in accordance with MIL-S-19500, except as otherwise specified herein.

MIL-S-19500/167 - Semiconductor Device, Diode, Type 1N560 And 1N561 (Navy)

This specification covers the detail requirements for 0.250 amp silicon power rectifiers and is in accordance with MIL-S-19500, except as otherwise specified herein.

MIL-S-19500/170 - Semiconductor Device, Transistor, Pnp, Germanium Type 2N1499A

This specification covers the detail requirements for germanium, PNP, transistors for use particularly as high-speed switching devices in compatible electronic-equipment circuits.

MIL-S-19500/171 - Semiconductor Device, Transistor, Pnp, Germanium, Type 2N1853

This specification covers the detail requirements for a germanium, PNP switching transistor and is in accordance with MIL-S-19500, except as otherwise specified herein.

MIL-S-19500/172 - Semiconductor Device, Transistor, Pnp, Germanium, Type 2N1854

This specification covers the detail requirements for a germanium, PNP switching transistor and is in accordance with MIL-S-19500, except otherwise specified herein.

MIL-S-19500/173 - Semiconductor Device, Transistor, Types 2N389 And 2N424 (Navy)

This specification covers the detail requirements for high power, silicon, NPN, transistors, and is in accordance with specification MIL-S-19500 except as otherwise specified herein.

MIL-S-19500/174 - Semiconductor Device, Transistor, Pnp, Germanium, Low Power Type Jan-2N398A

This specification covers the detail requirements for a PNP, germanium, low-power transistor.

MIL-S-19500/175 - Semiconductor Device, Transistor, Pnp, Germanium, Low Power Types 2N650A, 2N651A, And 2N652A

This specification covers the detail requirements for PNP, germanium, low-power transistors.

MIL-S-19500/176 - Semiconductor Device, Transistor, Npn, Silicon, Power Types 2N1047A, 2N1048A, 2N1049A And 2N1050A

This specification covers the detail requirements for NPN, power, silicon transistors.

MIL-S-19500/178 - Semiconductor Device, Transistor, Pnp, Germanium Type 2N1165

This specification covers the detail requirements for a germanium, PNP transistor and is in accordance with MIL-S-19500, except as otherwise specified herein.

MIL-S-19500/179 - Semiconductor Device, Transistor, Pnp, Silicon Type 2N1234

This specification covers the detail requirements for Silicon, PNP, transistors for use in low power amplifier applications.

MIL-S-19500/180 - Semiconductor Device, Transistor, Npn, Silicon, Medium-Power Types 2N1483, Tx2N1483, 2N1484, Tx2N1484, 2N1485, Tx2N1485, 2N1486, Tx2N1486

This specification covers the detail requirements for a NPN, silicon, medium-power transistor. The prefix "TX" is used on devices submitted to and passing the special process-conditioning, testing, and screening as specified in 4.5 through 4.5.8.1.

MIL-S-19500/183 - Semiconductor Device, Diode, Silicon, Rf Mixer Type Jan-1N25Wa

This specification covers the requirements for a double-ended, silicon semiconductor diode for use as a mixer (first detector) in the L-band.

MIL-S-19500/185 - Semiconductor Device, Diode, Silicon, S-Band, Vided Detector Type 1N32A

MIL-S-19500/186 - Semiconductor Device, Diode, Silicon, Rf Mixer Types Jan-1N53B, Jan-1N53Br, Jan-1N53Bm And Jan-1N53Bmr

This specification covers the detail requirements for silicon semiconductor diodes, types: 1N53B (forward polarity); 1N53BR (reverse polarity); 1N53BM (matched forward pair); and 1N53BMR (matched forward and reverse), for use as a mixer (first detector) in the Ka-band receiver.

MIL-S-19500/188 - Semiconductor Device, Diode, Silicon, Switching, Type Jan-1N251

This specification covers the detail requirements for a silicon semiconductor diode for use in switching circuitry.

MIL-S-19500/189 - Semiconductor Device, Transistor, Pnp, Germanium, Low-Power Types 2N1224 And 2N1225

This specification covers the detail requirements for a PNP, germanium, high-frequency, low-power transistor.

MIL-S-19500/191 - Semiconductor Device, Diode, Germanium, Mixer Type 1N263

This specification covers the detail requirements for a germanium semiconductor diode for use as a mixer (first detector) in an X-band receiver.

MIL-S-19500/192 - Semiconductor Device, Diode, Germanium, Switching Type 1N276, Jan, Jantx, And Jantxv

This specification covers the detail requirements for a germanium semiconductor diode.

MIL-S-19500/195 - Semiconductor Device, Diode, Silicon, Micro-Miniature, Switching Type 1N3206

This specification covers the detail requirements for a germanium semiconductor diode.

MIL-S-19500/196 - Semiconductor Device, Transistor, Pnp, Germanium Type 2N1008B

MIL-S-19500/197 - Semiconductor Device, Transistor, Pnp, Germanium Type 2N1008B

MIL-S-19500/2 - Semiconductor Device, Transistor, Npn, Silicon, Low-Power Types 2N117, 2N118 And 2N119

This specification covers the detail requirements for silicon, low power, medium frequency, NPN transistors.

MIL-S-19500/20 - Semiconductor Device, Transistor, Pnp, Germanium, Low Power Types 2N404 And 2N40A

This specification covers the detail requirements for PNP, germanium, low-power transistors.

MIL-S-19500/200 - Semiconductor Device, Diode, Germanium Type 1N270 Jan, Jantx, And Jantxv

This specification covers the detail requirements for a germanium gold bonded semiconductor diode.

MIL-S-19500/201 - Semiconductor Device, Diode, Germanium Type 1N277 Jan, Jantx, And Jantxv

This specification covers the detail requirements for a germanium semiconductor diode.

MIL-S-19500/202 - Semiconductor Device, Diode, Silicon, Power Rectifiers, Types Jan-1N538M, Jan-1N540M, And Jan-1N547M

This specification covers the detail requirements for silicon (low power) rectifiers.

MIL-S-19500/203 - Semiconductor Device, Thyristors, (Controlled Rectifiers) Silicon Types 2N2024, 2N2025, 2N2027, 2N2029, 2N2030

This specification covers the detail requirements for a reverse blocking triode thyristor, silicon types 2N2024, 2N2027, 2N2029, and 2N2030, and is in accordance with MIL-S-19500, except as otherwise specified herein.

MIL-S-19500/204 - Semiconductor Devices, Thyristor, Reverse Blocking, Silicon, Types 2N1792, 2N1793, 2N1795, 2N1797, 2N1798, 2N1799, 2N1800, 2N1805, 2N1806, 2N1910, 2N1911, 2N1913, 2N1915, 2N1916, 2N2031, Jan, Jantx, And Jantxv (Replaced By Dscc Drawing 99003)

This specification covers the detail requirements for silicon thyristors.

MIL-S-19500/205 - Semiconductor Device, Diode, Germanium, Low Level, Forward-Voltage-Reference Type 1N3287 Jan, Jantx, And Jantxv

This specification covers the detail requirements for a germanium semiconductor diode.

MIL-S-19500/207 - Semiconductor Device, Transistor, Npn, Silicon, Types 2N1479, 2N1480, 2N1481, 2N1482

This specification covers the detail requirements for silicon, NPN, medium-power transistors for use in compatible equipment circuits.

MIL-S-19500/208 - Semiconductor Device, Transistor, Npn, Silicon, High Power, Types 2N1487, 22N1488, 2N1489 And 2N1490

This specification covers the detail requirements for a silicon, NPN, high-power transistor.

MIL-S-19500/209 - Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N2172, 1N2173, 1N2174, 2N1682

MIL-S-19500/210 - Semiconductor Device, Transistor, Npn, Silicon, Photo Type 2N986

This specification covers the detail requirements for a NPN silicon phototransistor and is in accordance with MIL-S-19500, except, as otherwise specified herein.

MIL-S-19500/212 - Semiconductor Device, Diode, Silicon, Power Rectifier, Types In3263, In3263R, In3267, In3267R, In3269, In3269R, In3271, In3271R, In3273, In3273R (S/S By Mil-Prf-19500/211)

MIL-S-19500/213 - Semiconductor Device, Transistor, Pnp, Germanium, Low Power Type 2N2084

This specification covers the detail requirements for a PNP, germanium, high-frequency, low-power transistor.

MIL-S-19500/215 - Semiconductor Device, Transistor, Types 2N1173 And 2N1174 (Navy)

This specification covers the detail requirements for germanium, NPN type 2N1173 and PNP type 2N1174 transistors, the general requirements which are in accordance with Specification Mil-S-19500, unless otherwise specified herein.

MIL-S-19500/216 - Semiconductor Device, Transistor, Npn, Silicon Type 2N1051

This specification covers the detail requirements for silicon, NPN transistors.

MIL-S-19500/217 - Semiconductor Device, Transistors, Pnp, Germanium, High-Power Types 2N456B, 2N457B, 2N458B, 2N1021A, 2N1022A

This specification covers the detail requirements for high-power, PNP, germanium transistor.

MIL-S-19500/218 - Semiconductor Device, Transistor, Npn, Silicon, Low-Power Types 2N757A, 2N759A And 2N760A

This specification covers the detail requirements for silicon, NPN, low-power transistors.

MIL-S-19500/219 - Transistor, Pnp, Germanium, Power Switching, Types 2N1651, 2N1652, 2N1653

This specification covers the detail requirements for germanium, PNP, power, switching transistors having the following particular characteristics at Ta = +25 Deg C.

MIL-S-19500/221 - Semiconductor Device, Transistor, Pnp, Germanium, High Speed Switching Type 2N604

MIL-S-19500/222 - Semiconductor Device, Transistor, P&Np, Germanium, Switching Type 2N1450

MIL-S-19500/223 - Semiconductor Device, Transistor, Pnp, Germanium, Switching Type 2N1646

MIL-S-19500/226 - Semiconductor Device, Diode, Germanium, Switching Type 1N3666(1) Jan, Jantx, And Jantxv

This specification covers the detail requirements for a germanium semiconductor diode.

MIL-S-19500/227 - Semiconductor Device, Diode, Type 1N995M (Navy)

This specification covers the detail requirements for a germanium switching diode and is in accordance with Specification MIL-S-19500, except as otherwise specified herein.

MIL-S-19500/229 - Semiconductor Device, Diode, Type 1N830Am (Navy)

This specification covers the detail requirements for a silicon diode for UHF detector applications and is in accordance with Specificaiton MIL-S-19500, except as otherwise specified herein.

MIL-S-19500/230 - Semiconductor Device, Diode, Silicon, High-Conductance Type Jan-1N3207

This specification covers the detail requirements for silicon, high-conductance diodes, for use as thin-film or magnetic-core drivers.

MIL-S-19500/232 - Semiconductor Device, Diode, Silicon, Mixer Types 1N21We, 1N21Wem, And 1N21Wemr (S/S By Dscc Dwg 00005)

This specification covers detail requirements for a silicon semiconductor diode (with removable adapter) types: 1N21We (forward polarity); 1N21WEM (matched forward pair); and 1N21WEMR (matched forward and reverse); for use as a mixer in S-band equipment.

MIL-S-19500/233 - Semiconductor Devices, Diode, Silicon, Mixer Types 1N23We, 1N23Wem, And 1N23Wemr (Use Mil-S-19500/322)

MIL-S-19500/234 - Semiconductor Device, Diode, Silicon, Rf Mixer Type In25 (S/S By Mil-S-19500/183)

MIL-S-19500/236 - Semiconductor Device, Diode, Silicon Type 1N31

This specification covers the detail requirements for a silicon semiconductor diode for use as a video detector.

MIL-S-19500/237 - Semiconductor Device, Diode, Silicon, Video Detector Type 1N32

This specification covers the detail requirments for a silicon semiconductor diode for use in an S-band detector.

MIL-S-19500/238 - Semiconductor Device, Diode, Silicon, Mixer Type In53 (S/S By Mil-S-19500/186)

MIL-S-19500/239 - Semiconductor Device, Diode, Silicon, Type Jan-In78M (Use Mil-S-19500/129)

MIL-S-19500/24 - Semiconductor Device, Transistor, Pnp, Germanium, Power Type 2N158

This specification covers the detail requirements for a PNP, germanium, power transistor.

MIL-S-19500/242 - Semiconductor Device, Diodes, Silicon Type N2146M

MIL-S-19500/244 - Transistor, Pnp, Germanium Type 2N2273

This document covers the detail requirements for a germanium, PNP, transistor for use in VHF circuit applications and having the following particular characteristics at TA = 25 Deg. C.

MIL-S-19500/245 - Semiconductor Device, Transistor, Npn, Germanium Type 2N2426M

MIL-S-19500/247 - Semiconductor Devices, Transistor, Npn, Silicon Type 2N1493

This document covers the detail requirements for silicon, NPN, transistor for use in VHF circuit applications and having the following particular characteristics at TA= plus 25 deg. plus/minus 3 deg. C.

MIL-S-19500/248 - Transistor, Npn, Silicon Types 2N2015, 2N2016

This specification covers the detail requirements for silicon, NPN, transistors for use in high-power circuit applications and having the following particular characteristics at TA = + 25 Deg. plus/minus 3 Deg. C.

MIL-S-19500/25 - Semiconductor Device, Transistor, Pnp, Germanium, Low-Power Type 2N240

This specification covers the detail requirements for a low-power, high-speed switching, PNP, germanium transistor.

MIL-S-19500/250 - Semiconductor Diode, Silicon, Uhf Mixer Type 1N82Ag

This specification covers the detail requirements for a silicon semiconductor diode for use in UHF mixer circuit applications.

MIL-S-19500/252 - Semiconductor Device, Diode, Germanium, R-F Mixer Type 1N2792

MIL-S-19500/254 - Semiconductor Device, Diode, Silicon, Types 1N1147 And 1N1149, Jan

This specification covers the performance requirements for silicon, semiconductor diodes for use particularly as high-voltage rectifier devices in compatible equipment circuits. One level of product assurance is provided for each device as specified in MIL-PRF-19500.

MIL-S-19500/256 - Semiconductor Device, Diode, Silicon, Switching, Types 1N643, 1N662 And 1N663

This specification covers the detail requirements for a silicon semiconductor diode for use in UHF mixer circuit applications.

MIL-S-19500/257 - Semiconductor, Device, Diode, Silicon Type 1N658

This specification covers the detail requirements for a silicon, semiconductor diode for use, particularly, as a switching device in relatively high-current-load equipment circuits.

MIL-S-19500/258 - Semiconductor Device, Transistor Types 2N962 And 2N964

This specification covers the detail requirements for PNP germanium epitaxial switching transistors and is in accordance with MIL-S-19500, except as otherwise specified herein.

MIL-S-19500/259 - Semiconductor Devices, Diodes, Silicon, Power Rectifiers Types Jan-1N1130 And Jan-1N1131

This specification covers the detail requirements for silicon semiconductor diodes for use in rectifier circuitry.

MIL-S-19500/26 - Semiconductor Device, Transistor, Junction, Pnp Drift, Rf Amplifier, Type 2N274 (Use Mil-S-19500/27)

MIL-S-19500/261 - Semiconductor Device, Transistor, Pnp, Germanium, Power, Type 2N2210 (S/S By Mil-S-19500/76)

MIL-S-19500/263 - Semiconductor Device, Transistor, Npn, Silicon, Power Types 2N1714, 2N1714S, 2N1715, 2N1715S, 2N1716, 2N1716S, 2N1717, And 2N1717S

This specification covers the detail requirements for silicon, NPN, transistors for relatively high-power circuit applications, and having the following particular, differential characteristics at T^= +25 degrees =3 degrees C. (See 3.2 herein.)

MIL-S-19500/264 - Semiconductor Diode, Npn, Silicon, Photo, Polar-Symmetrical Type 1N2175 (Use Mil-S-19500/300)

MIL-S-19500/265 - Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N1506A

MIL-S-19500/266 - Semiconductor Device, Diode, Silicon, Power Rectifier, Fast-Recovery Types In3875, 1N3875, In3876, In3878, In3880, In3881, In3883, In3880R, In3881R, And In3883R (S/S By Mil-S-19500/304)

MIL-S-19500/267 - Transistor, Pnp, Germanium Type 2N987

This specification covers the detail requirements for a germanium, PNP, relatively high-gain transistor for use in high-frequency equipment circuits, and having the following significant characteristics at TA = + 25 Degree C.

MIL-S-19500/268 - Semiconductor Device, Transistor, Npn, Silicon Switching Types 2N2481 And Tx2N2481

This specification covers the detail requirements for a NPN, silicon, high-speed switching transistor.

MIL-S-19500/269 - Semiconductor Device, Tunnel Diode, Types 1N3713, 1N3715, 1N3717, 1N3719 And 1N3721

This specification covers the detail requirements for germanium tunnel diodes and is in accordance with Specification MIL-S-19500, except as otherwise herein.

MIL-S-19500/27 - Semiconductor Device, Transistor, Pnp, Germanium, High-Frequency Type 2N384

This specification covers the detail requirements for a PNP, germanium, high-frequency transistor.

MIL-S-19500/271 - Semiconductor Device, Transistor Type 2N916

This specification covers the detail requirements for an NPN-silicon transistor and is in accordance with specification MIL-S-19500, except as otherwise specified herein.

MIL-S-19500/272 - Semiconductor Device, Diode, Silicon, Voltage-Regulator Types (Tx And Non-Tx)1N3993A Through 1N4000A And The Ra (S/S By Mil-Prf-19500/124)

This specification covers the detail requirements for silicon, 10 watt, voltage-regulator diodes with the following ratings and characteristics.

MIL-S-19500/273 - Semiconductor Device, Transistor Type Type 2N744

This specification covers the detail requirements for an NPN, silicon, high-speed switching transistor and is accordance with MIL-S-19500, except as otherwise specified herein.

MIL-S-19500/274 - Semiconductor Device, Npn, Silicon, Transistors Types 2N910, 2N910S, 2N911, 2N911S, 2N912, And 2N912S, Jan And Jantx

This specification covers the detail requirements for NPN, silicon, transistors for small-signal, general purpose amplifier applications.

MIL-S-19500/275 - Semiconductor Device, Diode, Silicon, Switching Type In4087 (S/S By Mil-Prf-19500/337)

MIL-S-19500/277 - Semiconductor Device, Transistor, Npn, Silicon, Power Types 2N2150 And 2N2151 Jantx

This specification covers the detail requirements for NPN, silicon, power transistors. One level of product assurance is provided for each device type as specified in MIL-S-19500.

MIL-S-19500/278 - Semiconductor Device, Diode, Silicon, Matched Pair Types 1N4306, 1N4306M, Jantx And Jantxv

This specification covers the detail requirements for silicon, matched pair, diodes used in switching circuits.

MIL-S-19500/280 - Semiconductor Device, Thyristor (Controlled Rectifier), Silicon Types 2N3091, 2N3093, 2N3095, 2N3097, 2N3098, 2N3099, 2N3101, 2N3103, 2N3105, And 2N3106

This specification covers the detail requirements for silicon thyristors, types 2N3091, 2N3093, 2N3095, 2N3097, 2N3098, 2N3099, 2N3101, 2N3103, 2N3105, and 2N3106 and is in accordance with MIL-S-19500, except as otherwise specified herein.

MIL-S-19500/281 - Semiconductor Device, Diode, Silicon, Mixer Types 1N3747W, 1N3447Wm, And 1N3747Wmr (Use Mil-S-19500/322)

MIL-S-19500/282 - Semiconductor Device, Diode, Silicon, Switching Type 1N4376 Jan And Jantx

This specification covers the detail requirements for silicon, switching diodes.

MIL-S-19500/283 - Semiconductor, Device, Transistor, Pnp, Silicon, Switching Types 2N869A And 2N4453 Jantx And Jantxv

This specification covers the detail requirements for a PNP, silicon, high-speed switching transistor.

MIL-S-19500/284 - Semiconductor Device, Diode, Silicon, Matched Quad, Types 1N4307, 1N4307M Jantx And Jantxv

This specification covers the detail requirements for silicon, matched quad, diodes used in switching circuits.

MIL-S-19500/285 - Semiconductor Device, Diode, Silicon Types 1N660, 1N661 (Use Mil-Prf-19500/169)

This specification covers the detail requirements for silicon, semiconductor diodes for use, particularly, as switching devices in relatively high-conductivity circuit applications.

MIL-S-19500/288 - Semiconductor Device, Transistor, Pnp, Silicon Type 2N2377

This specification covers the detail requirements for silicon, PNP, transistors for use in audio-and radio-frequency amplifier circuitry.

MIL-S-19500/289 - Semiconductor Device, Transistor, Pnp, Silicon Type 2N2378

This specification covers the detail requirements for silicon, PNP, transistors for use, particularly, in switching, amplifier.

MIL-S-19500/292 - Semiconductor Device, Field Effect Transistor, P-Channel, Silicon Type 2N2606

MIL-S-19500/293 - Semiconductor Device, Diode, Type 1N93A

This specification covers the detail requirements for a germanium semiconductor diode for use in rectifier circuitry and is in accordance with MIL-S-19500.

MIL-S-19500/294 - Semiconductor Device, Field-Effect Transistor, P-Channel, Silicon Type 2N2607

MIL-S-19500/298 - Semiconductor Device, Diode, Silicon Type 1N1742A

This specification covers the detail requirements for a 49.6 volt + 5% silicon, voltage-reference diode, and is in accordance with MIL-S-19500 and as specified herein.

MIL-S-19500/299 - Semiconductor Device, Diode, Type 1N429

MIL-S-19500/30 - Semiconductor Device, Transistor, Pnp, Germanium, Alloy Junction Type 2N123

This specification covers the detail requirements for a PNP Germanium Alloy-Junction Transistor, medium speed switching, and is in accordance with MIL-S-19500 except as otherwise stated herein.

MIL-S-19500/300 - Semiconductor Device, Photo-Transistor, Npn, Silicon Type In4378

MIL-S-19500/303 - Semiconductor Device, Transistor, Types 2N2631 And 2N2876

This specification covers the detail requirements for a silicon, NPN transistor and is in accordance with MIL-S-19500, except as otherwise specified herein.

MIL-S-19500/309 - Semiconductor Device Transistor, Pnip, Germanium, Type 2N2528

MIL-S-19500/31 - Semiconductor Device, Transistor, Npn, Silicon, Low Power Type 2N341

This specification covers the detail requirements for a NPN, silicon, low-power transistor.

MIL-S-19500/310 - Semiconductor Device, Transistor, Pnp, Germanium Type 2N2834

This specification covers the detail requirements for germanium, PNP transistor, and is in accordance with MIL-S-19500.

MIL-S-19500/311 - Semiconductor Device, Transistor, Npn, Silicon, Type 2N720A (S/S By Mil-S-19500/182)

MIL-S-19500/314 - Semiconductor Device, Transistor, Pnp, Silicon, Types 2N2905A And 2N2907A (S/S By Mil-S-19500/290 And Mil-S-19500/291)

MIL-S-19500/316 - Semiconductor Device, Transistor, Npn, Silicon Differential Amplifier Types 2N2639, Tx2N2639, 2N2642, Tx2N2642

MIL-S-19500/318 - Semiconductor Device, Diode, Power Rectifier Jan Type - 1N1084

This specification covers the detail requirements for silicon 250 milliampere rectifiers.

MIL-S-19500/319 - Semiconductor Device, Npn, Power Type 2N2525

MIL-S-19500/320 - Semiconductor Device, Diode, Silicon , Voltage-Reference Type 1N1530A

MIL-S-19500/321 - Semiconductor Device, Diode, Silicon, Mixer Types 1N21Wg, 1N21Wgm, And 1N21Wgmr

This specification covers the detail requirements for a silicon semiconductor diode types 1N21WG (forward polarity), 1N21WGM (matched forward pair), and 1N21WGMR (matched forward and reverse) for use as a mixer in the S-Band equipment.

MIL-S-19500/322 - Semiconductor Device, Diode, Silicon Mixer Types: 1N23We, 1N23Wem, 1N23Wemr, 1N23Wg, 1N23Wgm, And 1N23Wgmr

This specification covers the detail requirements for a silicon point contact semiconductor diode for use as single units, matched forward pairs and matched forward and reverse pairs as a mixer in X band equipment.

MIL-S-19500/325 - Semiconductor Device, Transistor, Npn, Silicon, Type Jan-Tx-2N2222 (S/S By Mil-S-19500/255)

MIL-S-19500/329 - Semiconductor Device, Diode Silicon, Voltage-Variable Capacitor Types 1N4801A Through 1N4815A And 1N4801B Through 1N4815B Jan, Jantx And Jantxv

This specification covers the detail requirements for capacitance-tolerance graded silicon voltage-variable capacitor, semiconductor diodes for use as precision devices for frequency-control tuning applications.

MIL-S-19500/330 - Semiconductor Device, Transistor Pnp, Germanium Types 2N1557A Through 2N1560A

This specification covers the detail requirements for germanium, PNP, power transistors for particular use in power-switching, electronic-circuit applications.

MIL-S-19500/331 - Semiconductor Device, Transistor, Pnp, Germanium, Power Types 2N1553A Through 2N1556A

This specification covers the detail requirements for germanium, PNP, power transistors for particular use in power-switching, electronic-circuit applications.

MIL-S-19500/332 - Semiconductor Device, Transistor, Pnp, Germanium, Power Types 2N1549A Through 2N1552A

MIL-S-19500/334 - Semiconductor Device, Diode, Silicon, Mixer Types 1N3655A, 1N3655Am, And 1N3655Amr

This specification covers the detail requirements for silicon semiconductor diode types: 1N3655A (removable adapter establishes forward or reverse polarity); 1N3655AM (matched forward pair); and 1N3655AMR (matched forward and reverse); for use as a mixer in S-band.

MIL-S-19500/335 - Semiconductor Device, Silicon, Voltage Reference (Temperature-Stable) Type 1N430A, 1N430B

This specification covers the detail requirements for silicon, low-voltage, temperature compensated, semiconductor diodes designed for application in equipment circuits where a high degree of voltage stability relative to the operating temperature range is required.

MIL-S-19500/338 - Semiconductor Device, Transistor, Pnp Germanium, Switching Type 2N3449

This specification covers the detailed requirements for a low-level, high-speed-switching germanium transistor designated 2N3449.

MIL-S-19500/339 - Semiconductor Device, Diode, Silicon, Video Detector Types 1N358A, 1N358Ar, 1N358Am, And 1N358Amr

This specification covers the detail requirements for coaxial tripolar silicon semiconductor diode types: 1N358A (forward polarity); 1N358AR (reverse polarity); 1N358AM (matched forward pair); and 1N358AMR (matched forward and reverse), for use as a broadband video detector from S-to X-band.

MIL-S-19500/340 - Semiconductor Device, Transistor, Pnp, Germanium, High Power Type 2N2079A

This specification covers the detailed requirements for a high-power, germanium, PNP, transistor.

MIL-S-19500/341 - Semiconductor Device, Transistor, Npn, Silicon, High-Frequency, Power Types 2N3375, 2N3553, And 2N4440 Jan, Jantx, And Jantxv

This specification covers the detail requirements for NPN, silicon, high-frequency, power-amplifier transistors.

MIL-S-19500/342 - Semiconductor Device, Transistor, Npn, Silicon, Types Tx 2N1711 And Tx 2N1890 (S/S By Mil-S-19500/225)

MIL-S-19500/344 - Semiconductor Devices, Silicon, Power Rectifiers, Types Tx 1N1202, Tx 1N1204, Tx 1N1206, Tx 1N1202R, Tx 1N1204R, And Tx 1N1206R (S/S By Mil-S-19500/260)

MIL-S-19500/345 - Semiconductor Device, Diodes, Silicon, Types Tx1N483B, Tx1N485B, And Tx1N486B (Use Mil-Prf-19500/118)

MIL-S-19500/346 - Semiconductor Device, Transistor, Pnp Germanium Type 2N3127

MIL-S-19500/351 - Semiconductor Device, Diode, Assembly Type 920-2

MIL-S-19500/352 - Semiconductor Device, Diode, Silicon Type 1N831A

This specification covers the detail requirements for a silicon, semi-conductor diode for use as a mixer (first-detector stage ) device in S-Band (see 4.3.1) equipment circuits.

MIL-S-19500/353 - Semiconductor Device, Diode, Silicon Types 1N832B, Jan, Jantx, And Jantxv

MIL-S-19500/36 - Semiconductor Device, Transistor, Pnp, Germanium, High-Power Type 2N297A

This specification covers the detail requirements for a PNP, germanium, high-power transistor.

MIL-S-19500/360 - Semiconductor Device, Transistor Types 2N2996 And 2N2997

This specification covers the detail requirements for germanium, PNP, low-power transistors, characterized for VHFand UHF amplifier applications and is in accordance with MIL-S-19500.

MIL-S-19500/361 - Transistor, Pnp, Silicon, Double-Emitter Type 3N108

This specification covers the detail requirements for a silicon, PNP, double-emitter transistor, characterized for low-level, chopper applications.

MIL-S-19500/362 - Semiconductor Device, Diode, Silicon, Mixer Types 1N1132 And 1N1132R

This specification covers the detail requirements for a silicon semiconductor diode types 1N1132 (forward polarity) and 1N132R (reverse polarity) for use as a mixer in the S-band through the X-band receiver. Ratings and characteristics as specified herein are applicable to both types.

MIL-S-19500/363 - Semiconductor Device, Transistor, Pnp, Silicon, Dual Type 3N93

This specification covers the detail requirements for a silicon, PNP, dual-emitter transistor, characterized for low-level, chopper applications, and is in accordance with MIL-S-19500, except as otherwise specified herein.

MIL-S-19500/364 - Semiconductor Device, Diode, Germanium, Mixer Type In1838

This specification covers the detail requirements for a germanium semiconductor mixer diode for low-noise performance in doppler-radar receivers at ku-band or below, employing audio frequency IF amplifiers.

MIL-S-19500/365 - Semiconductor Device, Diode, Silicon, Power Rectifier Types In4383, In4384, In4385, In4585, In4586, & Tx4383, Tx1N4384, Tx1N4385, Tx1N4585, & Tx1N4586 (Use Mil-S-19500/427)

MIL-S-19500/367 - Semiconductor Device, Diode, Silicon, High Current, Power Rectifier Tx And Non-Tx Types 1N5197, 1N5198, 1N5199, 1N5200, And 1N5201, (Use Mil-S-19500/420)

MIL-S-19500/372 - Semiconductor Device, Thyristor (Controlled Rectifier), Silicon Types 2N4199 Through 2N4206

This specification covers the detail requirements for silicon, diffused-junction, PNPN, thyristors for application, particularly, as controlled rectifier, fast pulse-switching devices in compatible equipment circuits.

MIL-S-19500/373 - Semiconductor Device, Transistor, Npn, Silicon Switching Types 2N914 And Tx2N914

This specification covers the detail requirements for NPN, silicon, switching transistors.

MIL-S-19500/377 - Semiconductor Devices, Diode, Silicon Switching (High Speed, High Current) Type 1N5282 & Tx-1N5282 Type In5317 & Tx-1N5317 (Use Mil-Prf-19500/231)

MIL-S-19500/378 - Semiconductor Device, Field-Effect Transistor, P-Channel, Silicon, Types 2N2497 Through 2N2500, 2N3329 Through 2N3332, Jantx

This specification covers the detail requirements for P-channel, junction, silicon field-effect transistors. One level of product assurance is provided for each device type as specified in MIL-S-19500.

MIL-S-19500/38 - Semiconductor Device, Transistor, Pnp, Germanium, Power Types 2N539 And 2N539A

This specification covers the detail requirements for a germanium, PNP, power transistor and is in accordance with MIL-S-19500, except as otherwise specified herein.

MIL-S-19500/380 - Semiconductor Device, Transistor, Npn, Silicon, Power Types 2N4865, 2N5250, 2N5251, Jantx, Jantxv, And Jans

This specification covers the detail requirements for NPN power transistors. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.

MIL-S-19500/381 - Semiconductor Device, Transistor, Npn, Silicon, Types 2N2034, 2N2858, 2N2859, 2N2911 And Tx2N2034, Tx2N2858, Tx2N2859, Tx2N2911

This specification covers the detail requirements for silicon, NPN, transistors for particular use in amplifier and switching electronic-circuit applications.

MIL-S-19500/386 - Semiconductor Device, Thyristors (Silicon-Controlled-Switches) Types 3N81, 3N82, And 3N86

MIL-S-19500/387 - Semiconductor Device, Diode, Silicon, 10 Watt Types 1N4258B Thru 1N4293B (S/S By Mil-Prf-19500/124)

MIL-S-19500/388 - Semiconductor Device, Transistor, Pn, Silicon, Unijunction Types 2N4947, 2N4948 And 2N4949 Jan, Jantx, Jantx , And Jans

This specification covers the detail requirements for PN, silicon, unijunction transistors four levels of product assurance are provided for each device type as specified in MIL-S-19500.

MIL-S-19500/389 - Semiconductor Device, Diode, Silicon, High-Voltage Rectifier Types 1N5181, 1N5182, 1N5183, 1N5184 And Tx1N5181, Tx1N5182, Tx1N5183, Tx1N5184

This specifiction covers the detail requirements for silicon, high-voltage, semiconductor diode for use as rectifier devices in compatible equipment circuits.

MIL-S-19500/390 - Semiconductor Device, Transistor, Npn, Silicon, Double-Emitter Types 3N74, Tx3N74, 3N75, Tx3N75, 3N76, Tx3N76, 3N127, Tx3N127

This specification covers the detail requirements for a double-emitter,NPN, silicon tetrode transistor designed primarily for low-power chopper applications. The prefix "TX" is used on devices submitted to and passing the special process-conditioning, testing, and screening specified in 4.5 through 4.5.8.1.

MIL-S-19500/4 - Semiconductor, Device Transistor, Pnp, Germanium, Low Power Type 2N331

This specification covers the detail requirements for an audio-frequency, PNP, germanium transistor.

MIL-S-19500/40 - Semiconductor, Transistor, Npn, Germanium, Power Type 2N326

This specification covers the detail requirements for NPN, germanium, power transistor.

MIL-S-19500/400 - Semiconductor Device, Transistor, Npn, Silicon, High-Frequency Power Types 2N5016 And Tx2N5016

MIL-S-19500/401 - Semiconductor Device, Diode, Silicon, Switching Types 1N5165 An Tx1N5165 (S/S By Mil-Prf-19500/444)

MIL-S-19500/403 - Semiconductor Device, Diode, Silicon, Switching Type 1N4500, Jan And Jantx

This specification covers the detail requirements for silicon, switching diodes for use in circuits with high forward conductance, and shall be in accordance with MIL-S-19500 except as otherwise specified herein. The prefix "TX" is used on devices submitted to and passing the special process-conditioning, testing, and screening as specified in 4.5 through 4.5.12.

MIL-S-19500/405 - Semiconductor Device, Transistor, Npn, Silicon Types 2N3742, 2N4926, 2N4927, And Tx2N3742, Tx2N4926, Tx2N4927

This specification covers the detail requirements for silicon, NPN, transistors in high-voltage, amplifier application in electronic-equipment circuits.

MIL-S-19500/409 - Semiconductor Device, Transistor, Pnp, Silicon, Radiation Tolerant Type 2N5332 And Tx2N5332

MIL-S-19500/41 - Semiconductor Device, Transistor, Pnp, Germanium, Switching Types 2N425, 2N426, 2N427

This specification covers the detail requirements for germanium, PNP, transistors for use in low-power, switching applications in compatible equipment circuits.

MIL-S-19500/410 - Semiconductor Device, Transistor, Npn, Silicon, Radiation Tolerant Type 2N5399 And Tx2N5399

MIL-S-19500/414 - Semiconductor Device, Transistor, Npn, Silicon, High Power Type 2N5241, Jan, Jantx And Jantxv (S/S By Dscc Dwg 99009)

This specification covers the detail requirements for NPN, silicon, high-power transistors.

MIL-S-19500/416 - Semiconductor Device, Transistor, Pnp, Germanium, Power Type 2N5156

MIL-S-19500/417 - Semiconductor Device, Diode, Rectifier Assembly, High Voltage Type 1N5482 Through In5485

MIL-S-19500/418 - Semiconductor Device, Diode, Silicon, Rectifier Assembly, High Voltage Types 1N5477 Through 1N5481

MIL-S-19500/419 - Semiconductor Device, Thyristor (Controlled Rectifier), Silicon Types 2N3027 Through 2N3032, And Tx2N3027 Through Tx2N3032

This specification covers the detail requirements for silicon, PNPN, thyristors for application particularly as controlled rectifier, reverse-blocking triode devices in compatible electronic-equipment circuits. (See 3.2, 3.4, and 6.2 herein.) The prefix "TX" identifies devices meeting the special process-conditioning, testing, and screening requirements in 4.4 herein, and the stringent quality-control (LTPD) requirements in Tables I, II, and III herein.

MIL-S-19500/42 - Semiconductor Device, Transistor, Type 2N426

MIL-S-19500/425 - Semiconductor Device, Transistor, Pn, Silicon, Unijunction Jan2N5431, And Jantx2N5431

This specification covers the detail requirements for a PN, silicon, unijunction transistor. The prefix "TX" is used on devices submitted to and passing the special process-conditioning, testing, and screening tests specified in 4.5 through 4.5.8.1.

MIL-S-19500/43 - Semiconductor Device, Transistor, Type 2N427 (Use Mil-S-19500/41)

MIL-S-19500/432 - Semiconductor Device, Diode, Silicon Jan1N5624 Through Jan1N5627 And Jantx1N5624 Through Jantx1N5627

This specification covers the detail requirements for silicon, general purpose semiconductor diodes for use as power rectifiers in equipment circuits (see 6.2).

MIL-S-19500/438 - Semiconductor Device, Triode Thyristor (Bi-Directional), Silicon, Types 2N5806 Through 2N5809

This specification covers the detail requirements for silicon bi-directional triode thyristors (see 3.2.1) for use at frequencies up to 400 Hz, and shall be in accordance with MIL-S-19500 except as otherwise specified herein.

MIL-S-19500/44 - Semiconductor Device, Transistor, Pnp, Germanium, Low-Power Type 2N428

This specification covers the detail requirements for a PNP, germanium, low-power switching transistor.

MIL-S-19500/440 - Semiconductor Device, Transistor, Npn, Silicon Type 2N5927 Jantx And Jantxv (See Notice 3 For Replacement Information)

This specification covers the detail requirements for a NPN, silicon, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-S-19500.

MIL-S-19500/442 - Semiconductor Device, Transistor, Npn, Silicon, Hi-Frequency Power Types 2N5071 And Tx2N5071

This specification covers the detail requirements for a NPN, silicon, VHF, power transistor.

MIL-S-19500/447 - Semiconductor Device, Transistor, Silicon, Power Type 2N5926 Jantx And Jantxv (See Notice 3 For Replacement Information)

This specification covers the detail requirements for NPN, silicon, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-S-19500.

MIL-S-19500/45 - Semiconductor Device, Transistor, Pnp Germanium Type Jan2N461

MIL-S-19500/450 - Semiconductor Device, Transistor, Pnp, Silicon, Power Types 2N5958, 2N5960, Tx2N5958, And Tx2N5960

This specification covers the detail requirements for silicon, PNP, power transistors for particular use in power switching, electronic circuit applications. (See 3.3 and 6.2 herein.) The prefix "TX" identifies devices meeting the special process-conditioning, testing, and screening requirements in 4.4 herein, and the stringent quality-control (LTPD) requirements in Tables I, II, and III herein.

MIL-S-19500/451 - Semiconductor Device, Transistor, Npn, Silicon, Power Types 2N5957, 2N5959, Tx2N5957, And Tx2N5959

This specification covers the detail requirements for silicon, NPN, power transistors, for particular use in power switching, electronic circuit applications. (See 3.3 and 6.2 herein.) The prefix "TX" identifies devices meeting the special process-conditioning, testing, and screening requirements in 4.4 herein, and the stringent quality-control (LTPD) requirements in Tables I, II, and III herein.

MIL-S-19500/457 - Semiconductor Device, Transistor, Pnp, Silicon, Power Types 2N6060, 2N6062, Non-Tx, Tx, And Txv

This specification covers the detail requirements for silicon, NPN, power transistors for particular use in power switching, electronic circuit applications. (See 3.3 and 6.2 herein.) The prefix "TX" identifies devices meeting the special process-conditioning, testing, and screening requirements in 4.4 herein, and the stringent quality control (LTPD) requirements in Tables, I, II, III herein.

MIL-S-19500/458 - Semiconductor Device, Transistor, Pnp, Silicon, Power Types 2N6061, 2N6063, Non-Tx, Tx, And Txv

This specification covers the detail requirements for silicon, PNP, power transistors for particular use in power switching, electronic circuit applications. (See 3.3 and 6.2 herein.) The prefix "TX" identifies devices meeting the special process-conditioning, testing, and screening requirements in 4.4 herein, and the stringent quality control (LTPD) requirements in Tables I, II, and III herein.

MIL-S-19500/459 - Semiconductor Device, Transistor, Pnp, Silicon, Power Types 2N5967 And 2N5969 Non-Tx, Tx, And Txv

This specification covers the detail requirements for silicon, PNP, power transistors for particular use in power switching, electronic circuit applications. (See 3.3 and 6.2 herein.) The prefix "TX" identifies devices meeting the special process conditioning, testing, and screening requirements in 4.4 herin, and the stringent quality-control (LTPD) requirements in Tables I, II, and III herein.

MIL-S-19500/46 - Semiconductor Device,Transistor, Pnp, Germanium, Power Types 2N574, 2N575, 2N575A, 2N1157A

This specification covers the detail requirments for germanium, PNP, transistors for relatively high-power circuit applications, and having the following particular characteristics of TMB = +25 Deg + 3 Deg C.

MIL-S-19500/460 - Semiconductor Device, Diode, Gallium Arsenide, Mixer Type In5764, 1N5764M And 1N5764Mr

This specification covers the detail requirements for Gallium Arsenide, Low Barrier, High Sensitivity, Schottky-Barrier Semiconductor Diode, for use as a first detector in Ku-band equipment.

MIL-S-19500/462 - Semiconductor Device, Transistor, Npn, Silicon, Power Types 2N5966 And 2N5968 Non-Tx, Tx, And Txv

This specification covers the detail requirements for silicon, NPN, power transistors for particular use in power switching, electronic circuit applications. (See 3.3 and 6.2 herein.) The prefix "TX" identifies devices meeting the special process conditioning, testing, and screening requirements in 4.4 herein, and the stringent quality-control (LTPD) requirements in Tables I, II, and III herein.

MIL-S-19500/465 - Semiconductor Device, Diode, Silicon, Rectifier Assembly, High Voltage

This specification covers the detail requirements for 500 milliampere silicon, encapsulated, unicompensated rectifier assemblies for use in high-voltage circuitry, and operated at frequencies of less than 1 kHz.

MIL-S-19500/470 - Semiconductor Device, Silicon, High Power, Single Phase Full Wave Bridge Rectifier

MIL-S-19500/471 - Semiconductor Device, Transistor, Pnp, Germanium, Low-Power Types. 2N6365 And2N6365A

MIL-S-19500/473 - Semiconductor Device, Transistor, Npn, Silicon, High-Frequency Power Type 2N5918 And Tx2N5918

MIL-S-19500/475 - Semiconductor Device, Transistor, Npn, Silicon, High Frequency Power Types 2N5919A And Tx2N5919A

MIL-S-19500/479 - Semiconductor Device, Transistor, Npn, Silicon, High Frequency Power Types 2N6265, Tx2N6265 And Txv2N6265

MIL-S-19500/480 - Semiconductor Device, Transistor, Npn, Silicon, High Frequency Power Type 2N6266, Tx2N6266, And Txv2N6266

MIL-S-19500/481 - Semiconductor Device, Transistor, Npn, Silicon, High Frequency Power Types 2N6267, Tx2N6267 And Txv2N6267

MIL-S-19500/482 - Semiconductor Device, Transistor, Npn, Silicon, High-Frequency Power Types 2N5470 And Tx2N5470

MIL-S-19500/484 - Semiconductor Device, Diode, Silicon, Power Rectifier, General Purpose Tx And Non-Tx Types 1N5835 And 1N5836

This specification covers the detail requirements for silicon, general purpose semiconductor diodes for use as power rectifiers in equipment Circuits and is in accordance with MIL-S-19500, except as otherwise specified herein. The prefix "TX" is used on devices submitted to and passing the special process-conditioning, testing, and screening as specified in 4.6 through 4.6.9.

MIL-S-19500/487 - Semiconductor Device, Transistor, Npn, Silicon, High Power Types 2N5838, Tx2N5838, 2N5839, Tx2N5839, 2N5840, Txn5840 (See Mil-S-19500/510 Or Mil 19500/525)

MIL-S-19500/489 - Semiconductor Device, Transistor, Npn, Silicon, High Frequency Power Types 2N6104, Tx2N6104, 2N6105 And Tx2N6105

MIL-S-19500/49 - Semiconductor Device, Transistor, Pnp, Germanium, Types 2N464, 2N465, 2N467

This specification covers the detail requirements for germanium, PNP, transistors for use in low-power, amplifier applications in compatible electronic-equipment circuits.

MIL-S-19500/490 - Semiconductor Device, Diode, Silicon, Schottky Barrier Power Rectifier, Fast Recovery Tx And Non-Tx Types In5830, And In5831

MIL-S-19500/493 - Semiconductor Device, Pnpn, Thyristor, Silicon, (Programmable Unijunction Transistor), Types: 2N6116, 2N6117, 2N6118, 2N6137, 2N6138, Jan, Jantx, And Jantxv

This specification covers the detail requirements for PNPN, thyristor silicon, (programmable unijunction transistor). Three levels of product assurance are provided for each device type as specified in MIL-S-19500.

MIL-S-19500/494 - Semiconductor Device, Optically Coupled Isolator, Solid State 3N220 And Tx 3N220

MIL-S-19500/499 - Semiconductor Device, Transistor, Npn, Silicon, Power, Radiation-Tolerant Type Txv2N5304

MIL-S-19500/50 - Semiconductor Device, Transistor, Type 2N465 (S/S By Mil-S-19500/49)

MIL-S-19500/506 - Semiconductor Device, Transistor, Npn, Silicon, Power Type Jantxv2N6258

MIL-S-19500/51 - Semiconductor Device, Transistor, Pnp, Germanium, Low Power Type 2N466

This specification covers the detail requirements for a PNP, germanium, low-power transistor.

MIL-S-19500/513 - Semiconductor Device, Thyristors (Controlled Rectifiers) Silicon Types: 2N6605, 2N6606, 2N6607, 2N6608, Non-Tx, Tx, And Txv

This specification covers the detail requirements for PNPN silicon low power, reverse-blocking -triode, thyristors, and is in accordance with MIL-S-19500 except as otherwise specified herein. The prefix "TX" is used on devices submitted to and passing the special process-conditioning, testing, and screening as specified in 4.6. The prefix "TXV" is used on devices submitted to and passing the inspection specified in 4.5 and 4.6.

MIL-S-19500/517 - Semiconductor Device, Silicon, Diode Array, Type 1N6101 Jan, Jantx, And Jantxv (S/S By Mil-S-19500/474)

This specification covers the detail requirements for silicon, diode array. The prefix "TX" is used on devices submitted to and passing the special process-conditioning, testing, and screening as specified in 4.5.1 through 4.5.8. The prefix "TXV" is used on devices which have been subjected to and have passed the internal visual inspection specified in 4.6.

MIL-S-19500/52 - Semiconductor Device, Transistor, Type 2N467 (S/S By Mil-S-19500/49)

MIL-S-19500/524 - Semiconductor Device, Field Effect Transistor, N-Channel, Dual-Gate, Depletion-Type, Insulated-Gate, Silicon Type 3N204, Tx3N204 And Txv3N204

MIL-S-19500/529 - Semiconductor Device, Transistor, Silicon Type 2N3904

This specification covers the detail requirements for NPN, Silicon, Plastic encapsulated transistor, designed for general switching and amplifier applications.

MIL-S-19500/530 - Semiconductor Device, Transistor, Silicon Type 2N3906

This specification covers the detail requirements for PNP, Silicon, Plastic encapsulated transistor, designed for general switching and amplifier applications.

MIL-S-19500/531 - Semiconductor Device, Field Effect Transistor, N Channel, Dual Gate, Depletion Type, Insulated Gate, Silicon Device Types 3N201, 3N202, 3N203 And Tx, Txv

MIL-S-19500/536 - Semiconductor Device, Transistor, Npn, Silicon, Power Types 2N6671, And 2N6673 Jan, Jantx, And Jantxv

This specification covers the detail requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.

MIL-S-19500/537 - Semiconductor Device, Transistor, Npn, Silicon, Power Types 2N6674, 2N6675, 2N6689, And 2N6690 Jan, Jantx, And Jantxv

This specification covers the detail requirements for NPN, silicon, power transistors for use in high-speed power-switching applications.

MIL-S-19500/56 - Semiconductor Device, Transistor, Pnp, Germanium Types 2N416, And 2N417

This specification covers the detail requirements for germanium, PNP, transistors for use as low-power devices in compatible electronic-equipment circuits.

MIL-S-19500/568 - Semiconductor Device, Field Effect Transistor, N-Channel, Silicon Types 2N6962, 2N6963, 2N6964, And 2N6965 Jantx, Jantxv And Jans

MIL-S-19500/569 - Semiconductor Device, Field Effect Transistors, N-Channel, Silicon Types 2N6966, 2N6967, 2N6968, And 2N6969 Jantx, Jantxv, And Jans

This specification covers the detail requirements for an N-Channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications.

MIL-S-19500/57 - Transistor, High Frequency, Pnp, Germanium (Use Mil-S-19500/56)

MIL-S-19500/571 - Semiconductor Device, Field Effect Transistors, Mos, N-Channel, Silicon Types 2N7104, 2N7105, 2N7108, 2N7109, Jantx, Jantxv, And Jans

This specification covers the detail requirements for N-channel, field effect transistors.

MIL-S-19500/58 - Semiconductor Device, Transistor, Pnp, Germanium, High-Power Type 2N665

This specification covers the detailed requirements for a high-power, germanium, PNP, transistor.

MIL-S-19500/584 - Semiconductor Device, Rf Power Transistor, Npn, Silicon, Push-Pull Types Jantx, Jantxv, And Jans 2N6985 And 2N6986

This specification covers the detail requirements for a NPN, silicon, push-pull RF power transistor.

MIL-S-19500/591 - Semiconductor Device, Repetitive Avalanche, Field Effect Transistors, N-Channel, Silicon Types 2N7123, 2N7124, 2N7125, 2N7126, Jantx, Jantxv, And Jans (S/S By Mil-S-19500/543)

This specification covers the detail requirements for N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching application. Three levels of product assurance are provided for each device type as specified in MIL-S-19500, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR). Superseding DESC drawing 89007 of 19 December 1989 (see 6.4).

MIL-S-19500/60 - Semiconductor Device, Transistor, Pnp, Germanium, Type Jan-2N526

Rhis specification covers the detail requirements for a PNP, germanium, low-power transistor.

MIL-S-19500/62 - Semiconductor Device, Transistor, Pnp, Germanium, Low-Power Type 2N501A

This specification covers the detail requirements for transistor, PNP, germanium, low-power, switching, and is in accordance with MIL-S-19500 except as otherwise specified herein.

MIL-S-19500/63 - Semiconductor Device, Transistor, Npn, Germanium, Low Power Type 2N358A

This specification covers the detail requirements for a NPN, germanium, low-power transistor.

MIL-S-19500/64 - Semiconductor Device, Transistor, Pnp, Germanium, Low Power Type 2N396A

This specification covers the detail requirements for a low-power, PNP, germanium, transistor

MIL-S-19500/65 - Semiconductor Device, Transistor, Npn, Germanium, Switching Type 2N388

This specification covers the detail requirements for a NPN, germanium, low-power switching transistor.

MIL-S-19500/66 - Semiconductor Device, Transistor, Type 2N422

This specification covers the detail requirements for a germanium PNP transistor and is in accordance with MIL-S-19500, except as otherwise specified herein.

MIL-S-19500/67 - Semiconductor Device, Transistor, Pnp, Germanium, 50-Watt Type 2N1011

This specification covers the detail requirements for germanium, PNP, power transistors for use in compatible equipment circuits.

MIL-S-19500/68 - Semiconductor Device, Transistor, Pnp, Germanium, Switching Type 2N1120

This specification covers the detail requirements for a high-power, PNP, switching germanium transistor.

MIL-S-19500/69 - Semiconductor Device, Transistor, Npn, Silicon, Types Jan-2N337 And Jan-2N338

This specification covers the detail requirements for a low-power, NPN, silicon transistor.

MIL-S-19500/70 - Transistor, Type 2N463

This specification covers the detail requirements for germanium, PNP, power transistors, the general requirements which are in accordance with Specification MIL-S-19500, unless otherwise specified herein.

MIL-S-19500/71 - Semiconductor Device, Transistor, Pnp, Germanium, Low-Power Type 2N1195

This specification covers the detail requirements for a low-power, PNP, germanium, transistor.

MIL-S-19500/72 - Semiconductor Device, Transistor, Pnp, Germanium Types 2N499 And 2N499A

This specification covers the detail requirements for germanium, PNP, transistors for particular use in high-frequency, equipment-circuit applications.

MIL-S-19500/73 - Semiconductor Device, Transistor, Npn, Silicon, Switching Type 2N560

This specification covers the detail requirements for a NPN, silicon, low-power, switching transistor.

MIL-S-19500/74 - Semiconductor Device, Transistors, Npn, Silicon, Medium Power, Types 2N497, 2N498, 2N656 And 2N657

This specification covers the detail requirements for NPN, silicon, medium-power transistors.

MIL-S-19500/75 - Semiconductor Device, Transistors. Pn, Silicon Unijunction Types 2N2417A Through 2N2422A, And Tx2N2417A Through Tx2N2422A

This specification covers the detail requirements for silicon PN unijunction transistors and screening as specified in 4.5 through 4.5.8.1.

MIL-S-19500/76 - Semiconductor Device, Transistor, Pnp, Germanium, Power Types 2N1412 And 2N1412A

This specification covers the detail requirements for a germanium, PNP power transistor and is in accordance with MIL-S-19500, except as otherwise specified herein.

MIL-S-19500/77 - Semiconductor Device, Transistor, Pnp, Germanium, Low-Power Type 2N393

This specification covers the detail requirements for a low-power, PNP, germanium, transistor.

MIL-S-19500/78 - Semiconductor Device, Transistor Pnp, Silicon, Low-Power Types 2N1025, 2N1026 And 2N1469

This specification covers the detail requirements for PNP, silicon, low-power transistors.

MIL-S-19500/80 - Semiconductor Device, Transistor, Npn, Silicon, Low-Power Type 3N35

This specification covers the detail requirements for a silicon, NPN, high-frequency, low-power tetrode transistor.

MIL-S-19500/84 - Semiconductor Device, Transistor, Npn, Silicon Switching Type 2N545

MIL-S-19500/86 - Semiconductor Device, Transistor, Pnp, Germanium Type 2N705

This specification covers the detail requirements for a PNP diffused base, germanium, mesa transistor, for use in high speed switching applications, and shall be in accordance with Specification MIL-S-19500 except as otherwise specified herein.

MIL-S-19500/87 - Semiconductor Device, Transistor, Pnp, Germanium Low Power Type 2N1142

This specification covers the detail requirements for a low-power, high-frequency, PNP, germanium transistor.

MIL-S-19500/88 - Semiconductor Device, Transistor, Type 2N1046

This specification covers the detailed requirements for a PNP diffused germanium high frequency power transistor and shall be in accordance with Specification MIL-S-19500 except as otherwise specified herein.

MIL-S-19500/89 - Semiconductor Device, Transistor, Pnp, Germanium Types 2N1039, 2N1041, 2N2553, 2N2555, 2N2557 And 2N2559

This specification covers the detail requirements for PNP, germanium, power, transistors.

MIL-S-19500/9 - Semiconductor Device, Transistor, Pnp, Germanium, High Frequency, 25 Milliwatt, Type Jan-2N128

This specification covers the detail requirements for a PNP, germanium, high-frequency transistor.

MIL-S-19500/90 - Semiconductor Device, Transistor, Npn, Germanium Type 2N78A

MIL-S-19500/91 - Semiconductor Device Diode, Silicon, Power Rectifier Type 1N2153 (S/S By Dscc Drawing 99016)

This specification covers the detail requirements for a silicon power rectifier with the following characteristics.

MIL-S-19500/99 - Semiconductor Device, Transistor, Npn, Silicon, Switching, Medium-Power Types 2N696, 2N697, 2N696S And 2N697S

This specification covers the detail requirements for NPN, silicon, switching, medium-power transistors.

MIL-S-38103/515 - Semiconductor Device, Transistor, Pnp, Silicon, Dual Switch Established Reliability

MIL-S-38103/516 - Semiconductor Device, Transistor, Pnp, Silicon, Dual Switch Established Reliability

MIL-S-38103/517 - Semiconductor Device, Transistor, Npn, Silicon, General Purpose, Established Reliability

MIL-S-38103/518 - Semiconductor Device, Transistor, Npn, Silicon, Low Level Pair Established Reliability

MIL-S-38103/519 - Semiconductor Device, Transistor, Npn, Silicon, Low Level, Pair

MIL-S-38103/520 - Semiconductor Device, Transistor, Pnp Silicon, Switch Established Reliability

MIL-S-38103/521 - Semiconductor Device, Transistor, Pnp, Silicon, Switch Established Reliability

MIL-S-38103/522 - Semiconductor Device, Transistor, Npn, Silicon, Dual Switch Established Reliability

MIL-S-38103/523 - Semiconductor Device, Transistor, Npn, Silicon, Dual Switch Established Reliability

MIL-S-38103/524 - Semiconductor Device, Transistor, Npn, Silicon, General Purpose Established Reliability

MIL-S-38103/525 - Semiconductor Device, Transistor, Npn, Silicon, Power Established Reliability

MIL-STD-750 - Test Methods For Semiconductor Devices

This standard establishes uniform methods and procedures for testing semiconductor devices suitable for use within Military and Aerospace electronic systems. The methods and procedures in the various parts of this standard cover basic environmental, physical, and electrical tests to determine resistance to deleterious effects of natural elements and conditions surrounding military and space operations. For the purpose of this standard, the term "devices" includes such items as transistors, diodes, voltage regulators, rectifiers, tunnel diodes, and other related parts. This standard is intended to apply only to semiconductor devices. The test methods and procedures described in the various parts of this multipart test method standard have been prepared to serve several purposes: a. To specify suitable conditions obtainable in the laboratory that give test results equivalent to the actual service conditions existing in the field and to obtain reproducibility of the results of tests. The test methods described by this standard are not to be interpreted as an exact and conclusive representation of actual service operation in any one geographic location since it is known that the only true test for operation in a specific location is an actual service test at that point. b. To describe, in a series of standards, all of the test methods of a similar character which now appear in the various joint-services semiconductor device specifications so that these test methods may be kept uniform and thus result in conservation of equipment, man-hours, and testing facilities. In achieving this objective, it is necessary to make each of the general test methods adaptable to a broad range of devices. c. The test methods described by this standard for environmental, physical, and electrical testing of semiconductor devices shall also apply, when applicable, to parts not covered by an approved military sheet-form standard, specification sheet, or drawing.

MIL-STD-750-SUP - Test Methods for Semiconductor Devices

MIL-STD-839 - Parts With Established Reliability Levels, Selection And Use Of

MIL-STD-989 - Certification Requirements For Jan Semiconductor Devices

This standard establishes the minimum requirements for the certification of manufacturing facilities/lines (s) used in fabricating, assembling, and testing high reliability JAN semiconductors in accordance the MIL-S-19500.

QML-19500-31 - Semiconductor Devices, General Specification For (Replaced By The Qualified Products Database (Qpd) See Notice 1 For Additional Information)

QPL-38103-2 - Semiconductor Device, Established Reliability General Specification For

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